JP6634577B2 - Manufacturing method of silicon crystal - Google Patents
Manufacturing method of silicon crystal Download PDFInfo
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- JP6634577B2 JP6634577B2 JP2017009804A JP2017009804A JP6634577B2 JP 6634577 B2 JP6634577 B2 JP 6634577B2 JP 2017009804 A JP2017009804 A JP 2017009804A JP 2017009804 A JP2017009804 A JP 2017009804A JP 6634577 B2 JP6634577 B2 JP 6634577B2
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Description
本発明は、太陽電池用シリコン結晶の製造方法に関し、さらに詳しくはシリコン結晶のなかでもＦＺ法単結晶を、太陽電池用として使用する目的に限定して行う太陽電池用ＦＺ単結晶の製造方法に関する。 The present invention relates to a method for producing a silicon crystal for a solar cell, and more particularly, to a method for producing an FZ single crystal for a solar cell, in which an FZ method single crystal among silicon crystals is used only for the purpose of use for a solar cell. .
太陽電池用原料としては、現在世界で約８０％強がシリコンを使用している。しかしながらこの原料シリコンの製造は、殆どのものが高コストのシーメンス法により行われている。しかもこのシーメンス法による多結晶シリコン製造プロセスは、基本的には半導体用として確立されたものである為、品質最優先の堅牢・複雑なプロセスとなり、その製品は約８〜１０倍程度と格段に高価なものとなっている。 At present, about 80% or more of the world uses silicon as a raw material for solar cells. However, most of the production of this raw material silicon is performed by a high-cost Siemens method. In addition, since the polycrystalline silicon manufacturing process by the Siemens method is basically established for semiconductors, it is a robust and complex process in which quality is the highest priority, and the product is about 8 to 10 times as much. It is expensive.
このように原料費用が高価となるため、少ない原料シリコンで多くの発電量を確保するために、太陽電池として、より安価で大量生産可能であり、高い光電変換効率が得られる太陽電池用シリコン結晶の開発が求められている。 Since the raw material cost is high in this way, in order to secure a large amount of power generation with a small amount of raw silicon, a silicon crystal for a solar cell that can be mass-produced inexpensively and has high photoelectric conversion efficiency is obtained as a solar cell. Development is required.
太陽電池で高い光電変換効率を得るためには、アモルファス→多結晶→ＣＺ単結晶と進展してきた太陽電池セル用シリコン結晶を、更にＦＺ単結晶を採用することにより、安価で高効率である太陽光発電システムを確立し、民生用としての最終的な目的を達成することが出来る。しかしながらＦＺ単結晶は製造方法の違いにより、ＣＺ単結晶と比較して格段に高価なものとの認識が一般的である。その為に現在の太陽電池には殆ど使用されていない。本発明は、太陽電池用に特化してコストを削減したＦＺ単結晶を提供するものである。 In order to obtain high photoelectric conversion efficiency in a solar cell, a silicon crystal for a solar cell that has been developed from amorphous to polycrystalline to CZ single crystal, and furthermore, by adopting an FZ single crystal, a low-cost and highly efficient solar Establish a photovoltaic power generation system and achieve the ultimate purpose for consumer use. However, it is generally recognized that FZ single crystals are significantly more expensive than CZ single crystals due to differences in manufacturing methods. Therefore, they are hardly used in current solar cells. SUMMARY OF THE INVENTION The present invention provides an FZ single crystal which is specialized for a solar cell and has a reduced cost.
太陽電池用基盤材料に特化したライフタイムの長い太陽電池用ＦＺ単結晶の製造技術を提供する。 Provided is a technology for manufacturing an FZ single crystal for a solar cell having a long lifetime, which is specialized for a solar cell base material.
本法により工業的に製造された太陽電池用ＦＺ単結晶はこれまでのソーラー用ＣＺ単結晶と異なりシリコン中に含まれる所謂俗称ライフタイムキラーと称されるＦｅ、Ｃｕ、等重金属、Ａｌ、に代表される軽金属、シリコンと同族のＣ、並びにＯ２等を極端に減らすことを目的とする。 FZ single crystals for solar cells industrially manufactured by this method are different from conventional CZ single crystals for solar cells, in which so-called “lifetime killers” contained in silicon, so-called Fe, Cu, heavy metals, Al, etc. It is intended to extremely reduce typical light metals, C in the same family as silicon, and O2.
上記課題を解決するため、本願で特許請求される発明は以下の通りである。
（１）チャージ用原料シリコン多結晶原料ロッドは、通常その直径をミクロン単位でグラインド制御される必要があるが、原料加熱用プレヒーテイング・コイルをレーザー直径検知装置の出力により制御することを特徴とするＦＺ単結晶の製造方法。The invention claimed in the present application to solve the above problems is as follows.
(1) Normally, the diameter of the silicon raw material rod for charging needs to be grind-controlled in micron units, but the preheating coil for heating the raw material is controlled by the output of the laser diameter detector. A method for producing an FZ single crystal.
従来品に対して、ライフタイムの長い安価な太陽電池用ＦＺ単結晶が得られることになり、このことは従来品の中で最も光電変換効率が高いＣＺ単結晶に対して、はるかに光電変換効率が高いＦＺ単結晶を、ひいては、光電変換効率を近い将来、２５％→３０％→３５％→４５％と改善する事を現在技術の線上で工業的に可能とするタンデム型、シリコン量子ドット型等の工業化を容易とする太陽電池用原料として供給できることとなる。 An inexpensive FZ single crystal for a solar cell with a longer lifetime can be obtained compared to a conventional product, which means that the CZ single crystal, which has the highest photoelectric conversion efficiency among conventional products, is far more photoelectrically converted. A tandem-type, silicon quantum dot that is capable of industrially improving the efficiency of FZ single crystals, and thus the photoelectric conversion efficiency from 25% to 30% to 35% to 45% in the near future, in line with the current technology. It can be supplied as a raw material for solar cells that facilitates industrialization of molds and the like.
上記のことは、クリーンエネルギーとして将来性のある太陽電池事業が、その原料であるシリコン原料の不足の解消に大きく寄与し、太陽電池の利用拡大に大きく作用し、社会・環境の改善に貢献すること大である。 The above suggests that the solar cell business, which has future potential as clean energy, will greatly contribute to resolving the shortage of silicon raw material that is a raw material for it, and will greatly affect the expansion of use of solar cells, contributing to the improvement of society and the environment. It is big.
上記〔０００６〕項に、具体的に記したが、これにより本発明により製造されるＦＺ単結晶は、半導体に通常要求される結晶の完全性（リネージ、スワール、双晶、その他微小欠陥等諸欠陥フリー）は求めないが、ライフタイムは６００μ秒程度以上がキープされる事を主眼とする事を特徴とする。又、本発明により製造されるＦＺ単結晶は、これまでの太陽電池用ＣＺ単結晶と異なり、シリコン中に含まれる所謂ライフタイムキラーと称されるＦｅ、Ｃｕ、等の重金属、Ａｌ、に代表される軽金属及びシリコンと同族のＣ等を極端に減らすことが出来る。勿論Ｏ２含有量は、ＣＺに比べ極端に少ないことは周知の通りである。 As specifically described in the above section [0006], the FZ single crystal produced by the present invention thereby provides the crystal integrity (lineage, swirl, twin, other small defects such as fine defects) generally required for semiconductors. Defect free) is not required, but the feature is that the life time is maintained for about 600 μsec or more. Further, the FZ single crystal manufactured by the present invention is different from the conventional CZ single crystal for a solar cell, and is typically represented by heavy metals such as Fe, Cu, etc., which are so-called lifetime killers, and Al contained in silicon. It is possible to significantly reduce the amount of C and the like, which are the same as light metals and silicon. Of course, it is well known that the O2 content is extremely small as compared with CZ.
図１は、本発明装置の実施例を示す説明図である。
高周波印加ワーキングコイル１により種用単結晶（シード）４を溶かしつつ、あらかじめ原料加熱用プレヒーティング・コイル６によりチャージ用原料シリコン多結晶原料ロッド２を高周波印加ワーキングコイル１によって溶解温度までその底面を溶解させる。然る後種用単結晶（シード）４を高周波印加ワーキングコイル１を貫通させてチャージ用原料シリコン多結晶原料ロッド２に接触させ、高周波印加ワーキングコイル１の供給電力を調整しつつ種用単結晶（シード）４を下方向に引き下げる。この時チャージ用原料シリコン多結晶原料ロッド２の軸に対し、種用単結晶（シード）４の軸が偏心的に配置設定され、チャージ用原料シリコン多結晶原料ロッド２より溶解されたシリコン原料を偏心的に供給することにより、製品ＦＺ単結晶の生成を行う。FIG. 1 is an explanatory view showing an embodiment of the device of the present invention.
While the seed single crystal (seed) 4 is melted by the high-frequency application working coil 1, the raw material silicon polycrystalline material rod 2 is previously heated to the melting temperature by the high-frequency application working coil 1 by the high-frequency application working coil 1. Is dissolved. After that, the seed single crystal (seed) 4 is made to penetrate the high frequency application working coil 1 and is brought into contact with the charging material polycrystalline silicon raw material rod 2 to adjust the power supplied to the high frequency application working coil 1 while the seed single crystal is adjusted. (Seed) 4 is pulled down. At this time, the axis of the seed single crystal (seed) 4 is set eccentrically with respect to the axis of the charge raw material silicon polycrystalline raw material rod 2, and the silicon raw material dissolved from the charge raw silicon polycrystalline raw material rod 2 is supplied. The product FZ single crystal is produced by eccentric supply.
１・・・高周波印加ワーキングコイル
２・・・チャージ用原料シリコン多結晶原料ロッド
３・・・製品ＦＺ単結晶
４・・・種用単結晶（シード）
５・・・アフターヒーテイング・コイル
６・・・原料加熱用プレヒーテイング・コイル
７・・・レーザー直径検知装置
８・・・製品単結晶支えリングDESCRIPTION OF SYMBOLS 1 ... High frequency application working coil 2 ... Silicon raw material rod for charge 3 ... Product FZ single crystal 4 ... Single crystal for seed (seed)
5 After-heating coil 6 Preheating coil 7 for heating raw material 7 Laser diameter detector 8 Product support ring for single crystal
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| JP2017009804A JP6634577B2 (en) | 2017-01-05 | 2017-01-05 | Manufacturing method of silicon crystal |
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| JP6634577B2 true JP6634577B2 (en) | 2020-01-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2535470B2 (en) * | 1992-01-21 | 1996-09-18 | 信越半導体株式会社 | Semiconductor crystal rod support device |
| DE19538020A1 (en) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Large diameter single crystal silicon rod growth |
| JP3644227B2 (en) * | 1997-12-22 | 2005-04-27 | 信越半導体株式会社 | Method and apparatus for producing silicon single crystal |
| JP2013103874A (en) * | 2011-11-11 | 2013-05-30 | Yutaka Kamaike | Silicon and method for manufacturing the same |
| JP6064675B2 (en) * | 2013-02-28 | 2017-01-25 | 信越半導体株式会社 | Manufacturing method of semiconductor single crystal rod |
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