DK103624C - Process for the preparation of a semiconductor gallium phosphide body with a p-type part. - Google Patents

Process for the preparation of a semiconductor gallium phosphide body with a p-type part.

Info

Publication number
DK103624C
DK103624C DK338160AA DK338160A DK103624C DK 103624 C DK103624 C DK 103624C DK 338160A A DK338160A A DK 338160AA DK 338160 A DK338160 A DK 338160A DK 103624 C DK103624 C DK 103624C
Authority
DK
Denmark
Prior art keywords
preparation
type part
gallium phosphide
semiconductor gallium
phosphide body
Prior art date
Application number
DK338160AA
Other languages
Danish (da)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of DK103624C publication Critical patent/DK103624C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK338160AA 1959-08-29 1960-08-26 Process for the preparation of a semiconductor gallium phosphide body with a p-type part. DK103624C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN17153A DE1100173B (en) 1959-08-29 1959-08-29 Method for producing the semiconductor body from gallium phosphide of a semiconductor arrangement and a semiconductor arrangement produced by this method

Publications (1)

Publication Number Publication Date
DK103624C true DK103624C (en) 1966-01-31

Family

ID=7340341

Family Applications (1)

Application Number Title Priority Date Filing Date
DK338160AA DK103624C (en) 1959-08-29 1960-08-26 Process for the preparation of a semiconductor gallium phosphide body with a p-type part.

Country Status (5)

Country Link
CH (1) CH397870A (en)
DE (1) DE1100173B (en)
DK (1) DK103624C (en)
GB (1) GB953110A (en)
NL (1) NL254846A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302498A (en) * 1962-12-31
US3179541A (en) * 1962-12-31 1965-04-20 Ibm Vapor growth with smooth surfaces by introducing cadmium into the semiconductor material

Also Published As

Publication number Publication date
DE1100173B (en) 1961-02-23
CH397870A (en) 1965-08-31
GB953110A (en) 1964-03-25
NL254846A (en)

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