DEP0049166DA - Process for the separation of niobium and tantalum. - Google Patents

Description

Pfm., July 15

Sociltl Glalrai® Mitallnrglqu · d · liob © k «i _t Soel £ ti

Procedure for the separation of mob and tantalum "

Di® Krfladung refers to the treatment of M®tall «ö der.5 · Group of the jx * riodiechon Syst®®® and ingboeonder * to the separation of 3®s Miobs from tantalum, which is known to be extremely difficult« The invention g «stasstfe®t @ in® quickly« separation ύ®Β rUobs from tantalum and also from other metals of the S ^ rupi ⁵ ® dee periodi®eh @ n system by © is einfaohca? ®rfahr @ n _e

Srfindtißgßgesass is such ¥ ®rf®hr®n _e that a Stoffgemis © n _e the Klob tind tantalum la F @ r® of Pettto ^ don "nt" haltg d @ F Fiaiiirkung © in® @ ^ ffltri d® bild®ad @ In läitt®ls ₉ s _e ^ e gaseous 4 ^ ioniak _e unt @ rworf @ Q is converted into niobium nitride under conditions in which ffiobium ptntox ^ d is converted into niobium nitride and the! fiob nitride is formed for its effect hmlog @ nier <®n <l®n means

if ι ύ & Μ ία a volatile Ni © b = -Hadog @ nld over »it is then through ttegtillatloa and condensation

wa the tantalum-> P®nt @ ijd ftwonnen _e as halogen-

kdnn @ n Ohl & r ₉ Bros @dnr iodine or mersetslioh® d @ r
the
follow @ n4 @ fö

2 WB «· 5 OX ₉ m 2'llbGl. ·» -

£ -> Stra) iienprüfiiag @ a hsb @ ng®m @ igt ₈ that the conversion of niobium Iq Nitride gogon 6 @ © starts ₉ while the reaction with tantalum @rst b @ i @ about 8 starts. As a result, the conversion of the Kiobs ia nitride is carried out in the process explained above »wischen 6o © ° aod βοο ^θ _@ TOrsugs ^ sis® la der Haönb & rseaaft ψοά about 7® @ °.

«.According to the physical state of the® ία ¥ ®mrb @ ifc @ ad @ a Oxydg®slashes has a certain B # d®tifeung _{ö It is} advantageous to« earth precipitiert® Osjd® applied Di® R © dtikti © M | i © dißgiiag © B © in. "» eaig vary depending on d®r Qatar dtr O ^ d® tmd d @ a tures, at which. @ a ei © ¥ orh®r © srö®t © t

B @ i 7 @ ® ^Θ dlsso © ii © rt the A © m @ ai®k in »Ίο ßefoaden« tirdt, kaaa aaeh © ine Mi @ chnag ¥ »& nitrogen. And hydrogen fir di® Uawaadiimg d © r Q ^ jd® Is Hitrid® v © re @ nd @ t la dies © »Fall® is jedoefi di © Temp @ i? attiF mkx for dit

in HitoiS® higher _o When using a ®in®r mixture for hydrogen gas and carbon dioxide ®ntsp? eah @ ad der Forsisl des afflffloaiak », the Umwaadltmgstempcirattir % _e B ₀ is about 900 ° e

Xn msmctmn cases g®h @ is. gerlog * Mang © η τοα tantalum condensed into the © NioboMorid \ ib®w * This is based on fei © s © a _g w®leh® oadhst @ h @ nd korn besehri @ b @ a ^ © rd # a @ © ll @ a _e

Since tantalum © in © äöii®? ® kifimit & t stö nitrogen old st than niobium, an Austaoaoh T @ fi nitrogen aa @ hd @ r Formula 2 HM ♦? @ 2 ° 5 ° ^{2 Ts} ^ * ^ 2 ° 5 ^st Gfctf ijadG ^ o The g®bild®t @ Tastalnitriä witd alsdmnn ehlori®rt and the tantalum formed »© älorid (TmCIc) g®at al®? © ruar @ iiiig (ing in the product via _e Di® © © R © akti @ a Te rl auf t inS®ss @ a langsaa _e da si® with partial contact and diffusion take place «Um © in® as completely as possible® for ^ HQüog ι® β ^ Ι®Ι # ® _§ ®epf! © felt © s oi © h ₉ das Tr®fintings ¥ @ rfakKn at TOEfe-äl-fealsoasslg ni @ dr £ g®r temperature in kartei ¹ time, tmd with @ in®r pul ^ ®rörmi @ «i Misehong a ₉

Ela® anders® ilmaebi for di® ¥ © raar © iaif | uitg © ffi des can on the picture img ¥ «m Miob® * j®U.oi? Id is Sinn®

d # r Ροέ®®1 5 RbGLe * fa ^ o ^ - => IbOCl g φ 5 TmCIc based Di®s @ R © akti @ a ksM & while ά®τ Gttl®ri @ fti £ ig @ tattfiBd # a @ 9mm that

mixture penetrates. Not inconsiderable losses of tantalum can occur here _% if local overruns take place « lim. Overheating and the consequent parts to avoid * it is recommended Oich _s dom of chlorine ine üaSg gB, nitrogen @ ziiaumiachen "IUE gases of ünlorieruagsoperation ^ ^ soft contain nitrogen can this? @ Rw @ n <iung find nuf all® case recommends it work au Bich _one old thin layers and di «chlorination at the lowest temperatures durchsuführea _f that f; re Ine sufficiently rapid Durchfihraag dee process" come to be considered.

In a typical case, Geraisohe von Wioboxyd and Taataloxyd were treated with gaseous ammonia at temperatures of about 900 °. The oxides contain H7 _t * $ - Nb ₀ O ₁ - and 49t9 ^ Ta ₂ Oc * H & ch 2/2 hours the hydrogen was replaced by nitrogen and the temperature lowered to about 60 °. The chlorination with pure chlorine lasted one hour half • ^; 'tunde _e

After the chlorination, the residue contained 18 ₉ 6 $ Nb ₃ O, and ? B ₉ & X ^ 2 "V ^^^ ß® ⁸⁴ ^^ * tur & ®a about 83» 5 ^ separated »

Carrying out the Jm van dl u / ig in nitrides at

The ghlorierqngsrückatand contained 7oo ° while 13/2 pt

_t Nb ^ O ₁ - and '88 »o <Ta _{o ce} ^0: IEFB @ l" urd @ n 83 '? d @ s Nlobe separated. After all, 4 _f S * d®s tantalum went into the condensed "iioböhlorid over _e

When working with a mixture of chlorine and nitrogen, the separation of the niobium is considerably better

Claims (1)

Patent claim®s 1 _β ) Process for separating niobium from tantalum and / or others. Stalls of the group of pt-riodisehen dadurüh marked _β dasö © in iiiob and tantalum in the form of i entox ^ dsn containing Jtoffgeaiach der rin. is irk'int, a aar formation of nitrides bcifnhigten 5 £ eans _s s "3 _e of gaseous ammonia under conditions subjected to ₈ in which Mob ~ is converted into Hiobnitrid _g niobium thus formed" the Flnwirkung einee halogeai r®ad © @ n ^ itt @ la _e s ^ & is subjected to gaseous chlorine and the g © forms © volatile® rUobhulogsnid by ..bdeatillihi'ea and condensation separately from the dantalum pentox ^ d is obtained _e <? _e ) ¥ ® £> f®hnui nnüh aaspra @ h 1 ₉ characterized by » n @ t ₉ that a f © i © ¥ @ rfe ^ lit # Misohuag of Niobpentöxyd arid d®r iriswirMaag of gaseous © ammonia T @ fflp @ rafeur ®wiseb @ a ®twa ^ @ ® ° oaä 8oo ° la niobium nitride antor avoidance of the formation of tantalum nitride «