DEP0004479DA - Process for the manufacture of dry rectifiers - Google Patents

Description

South German Apparatefa & rih & - $ * &«&» Uürnberg ^

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Usage pattern auxiliary message (P 400)

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driving mr manufacturing w & n tro-oken equi entern *

<2 for r & uitengleichricnter be & mnt, where * .e% en. l'UeZtroänenp Me tna-beeonäere plate-shaped Binding ₀ Htm solid Venttlsehteht mgeüT & net t &% ₉ this sight serves for example- Kupf dl, $ elen ^ ¥ e.llw ₀ mm «

' For example -the selenium rectifier' ueat & hen a- thin- layer is tetallised $ ®len® # which is firmly adhered to & in & roughened carrier plutte by a suitable ^ process applied on the surface- this -lie-lene-chicftt is @tne low-melting (Segenetelectrod * after @ im.m avtf spraying process applied · ■ Anehltessend wlTi the © o. Built Meiwim ®itwm electrical F®rmi & «* rungeprose * s subject, imem the aufgetprit & te counter electrode bit the Plu@p.oi a & 2siQh ^ pmmmm .§Bqü & lM ₀ : Me base plate connected with ä @ & iitimspoi aitd * Ms $ pmnung is slowly increased to tu ate » amount, Mt tiaris-h the ftuTohBGhlagsfeetigkett. Or aureh the -permissible StMMtrmmg the disc- given f ^ t *

. -On ΘτίΜά- aer ideas about asm liettungsmeoUan-ievius; d09 selenium * can be explained eterden 'äiem & p® &fm'immifffollowingsrmaeen; Bel & n ge-h & rt% ur Klause ^ $ r St & retelJenhulleiter * Bm * & h electrolyte bags are in d®w, important processes and electrical formation StursteI -t removed from the surface sewer * As a result of the fetringer mg 4er s & rstelten increases & r & i & nah this

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■ South German ipparatef & bri * · & «« & · // · - ^ Ü.

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or blocking by defect telephones causes' Vt ¹ Td ₀ 4en ätem ionized interferences you can damage carriers 4er tw gait mn Xadunßen- nuitr & ten *

The invention mill nwt Mine- elektro-lyttecite Bntftr *.

nung dimmer n & gatiwn & o & mg * carrier mm der ®hm®im Seim * » mkieki dur & h Φ®η Prme® & 4 & r eitktrt & ohen.

SiSl-Un ₈ »ünäsrn is surrounded by a® ftethoäe m *.

I do not bind » ■ ', ·".

$ 9 is% ur production mn froc! Ten $ l0titkriahteTn _t im- * special from Selengletenrtehtem and Selenphptoelewenten * The free oil surface with the blocking area arches to the fore Ixuhung, i $ ®. Sperraiderdtandes a formerly & n ssshmidlmg subject'mird , srfinaim§®g @ mi®® varge & thla & enf die ' lenobeTflsehe'nit §altisn mn Moors of the moments dar and-VIT _m töebengntppe of the periodical B ^ & t & tm «u

For äi & Qß ch®f4ß®h0 B & fmdlung an * in principle before electrop & QittOen materials are approved- Me M & hl av & uehharen substances - & trd ieäo.ch € back over properties'strongly restricted »8ϋ should free play * -» ■ »% -dit not result in action prizes eitserh $ acting basis in selenium * in addition to Me StsrstelJen ** connection "on AEIE highest selenium layer be ^ G hränM stay, so do not * tons9orgünge by $ tffu deeply erliegende * selenium layers & € i where-Zettfähigkeit is erwtinscht, spread * '

As suitable substances Mfrm. stand ate 8al * e ä & r clocks », Äolybden ** i imlfrmn *» »Manganese tmd ^ ernangawsaurc in their% §hermn f skill levels gmsigt». Me term dung mn Älkaltsölt is particularly toorteilkaftm Bas-equals * s behavior € iggn the Thtosalse 4 & r above $ äureu _ß beispiels- * mim imontunthio & oljfbdat and sodium te- iCalimthtowlyöda.tm 'IIIe solutions are neutral &<#! R s & haach alkaline

.Jhe aforementioned string ®erd € ntt d & r selenium layer most advantageous after the crystallization of Asia, in & ttteleer @ & r 4 ^ m spray «for the counter electrode door

brought * JHe SaIm mraen in ^ tmser ^ in a g & ni & just solvent or in a German tether ge Met «In 4t®m Mmmg wir4 at® $ ®lem®ii0t-ug um ά & η Sr & ß u & r Stn & trktmg arnch ate Mtntmmhmii

small% u m & Mlm »Mmf®pt $ lsmim lmi a PepnangonlUsitfaff §mm§t ready® @ttm immntr®ti & m ^ l ^Q / m «Mmh 4 & m Snimeimsn d $ r $$ imi && am de» Mmä ®ίτά mm A * u8Mü§®mttteI zu »Veräun & t gg & fmhi wnä

Pear & lwmimM 'Meban &lung' Mr-Mt $ @ m work step electrical Ffttmiermg mäentlteh from wtä emuögltchts one * setts the Wrr @ iel% ®n -a higher BndmertwB the veneer ** ng ®-mi @. an & ere-rsetti * a reduction # 3 MUST BE + »

& ßv Wmumert aer Foratersptnmtng was possibly ifss ■ double äes so far 'ßftltßhen §ertes and over *

Furthermore, through M & m SekmMlwng- ä @ r stood ά $ ψ discs ^ in particular i » & ebi € t higher values * for example &<@ τ 20 VuIt ₀ . significantly increased

Claims (1)

factory '&&,& // 'I « Procedure for creating mn T in && e & utiäere. ® & n Be the right to change, mohei the -free surface on the outer barrier layer-SrMfämg -de® .Sper-rtatderstanaes a Ghe & t & ehen B & ir & ₄ däd & reh kunnseitthnett ae & e measuring surface® of the barrier layer with salts ®mon $ ßä r VI ₉ and YtX * 'M & bffngruppe aes fieriodiscfcen system' ö # * - becomes «.. - 2 «Seduce after ärmpruah I ₉ by the S-Salts uer & hro &». _g äulyb4än «> ₀ $ o2fr <m *> _i9 __ Manganese and PenaangomtiAure eertsends i * er <Mm «. . · 8 «Burning according to the claims i ma S ₉ characterized in that the aforementioned utilities are used in their -Higher valuation levels " * 4 »Process according to claims 1 Bi.® 3 # characterized by J ^ ** , Ms® dlkaltsul & e 4 & r the aforementioned acids 9er» werds-n * 5 «Process according to claims 1 bi® 4 ₀ daaur & characterizes» rfoa ^ üi & Thioeatse d & T -above for example ämmoniuMihiuml & Müt and sodium ** smrden * 6m- procedure n & eh 4en an ^ rüeiien 1 biä Ö> would know ehrtet, <2öä * dm Suelz in moderate & SRIG & r töeung brought into buckets organic.'S & mg & miti & i Mm * -in AIMM (MMI & uk & @ t4er with the Selenoherfleiche according Aegr crystallization u ß & ®lmt® mut fVeöt-tism UNAE of Maumgamitte 1 öor the Application of the counter electrode by evaporation is removed wtru » ? ₀ Process close to the claims 1 bi® S _s uü & utüU denotes ^ that® the solutions are neutral Oaerscfimach lisch *