DE962868C - Crucibles for the production of the purest semiconductor material, especially silicon and its use - Google Patents
Crucibles for the production of the purest semiconductor material, especially silicon and its useInfo
- Publication number
- DE962868C DE962868C DES32979A DES0032979A DE962868C DE 962868 C DE962868 C DE 962868C DE S32979 A DES32979 A DE S32979A DE S0032979 A DES0032979 A DE S0032979A DE 962868 C DE962868 C DE 962868C
- Authority
- DE
- Germany
- Prior art keywords
- purest
- crucible
- silicon
- crucibles
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Tiegel zum Herstellen reinsten Halbleitermaterials, insbesondere von Silizium und dessen Verwendung Die Erfindung geht von der Erfahrung aus, daß für die Herstellung von Dioden, Transistoren usw. die Reindanstellung von einkristallinen Halbleitern, insbesondere Silizium, eine erhebliche Rolle spielt.Crucibles for the production of the purest semiconductor material, in particular of Silicon and its use The invention is based on experience that for the manufacture of diodes, transistors, etc. the purification of monocrystalline Semiconductors, especially silicon, plays a significant role.
Es wurde nun gefunden, daß man, aus technischem Silizium von nur etwa 99,70/a Reinheit nach der Czochralskimethode einen Einkristall ziehen kann, der eventuell unter Wiederholung dieses Prozesses sehr rein ist. Um dieses Ergebnis zu erreichen und die Oualität des Kristalls noch zu steigern, ist es aber nach den gemachten Erfahrungen notwendig, den Schmelzprozeß in einem Tiegelmaterial vorzunehmen, das kaum oder keine Störstoffe abgibt. Die bereits bekannten Tiegel aus sehr reinen Siliziumverbindungen, die z. B. zum Schmelzen von optischem Glas verwendet werden können, genügen den bei der Herstellung von Halbleiterstoffen zu stellenden ungewöhnlich hohen Anforderungen an den Reinheitsgrad des Tiegelmaterials bei weitem nicht, da die Verunreinigungen dabei so gering sein müssen, daß sie nicht einmal spektralanalytisch nachgewiesen werden können. Auch Tiegel aus Siliziumdioxyd, die unter Umwandlung einer hydrolisierbarenSiliziumverbindung, wie z. B. Siliziumtetrachlorid, hergestellt werden, konnten wegen der Verunreinigungen nicht verwendet werden. Aus demselben Grund erwiesen sich auch mehrschichtige Tiegel mit Ausfütterungen von Graphit als ungeeignet für das Schmelzen von Halbleiterstoffen.It has now been found that, from technical silicon of only about 99.70 / a purity according to the Czochralski method can pull a single crystal that possibly very pure by repeating this process. To this result to achieve and to increase the quality of the crystal, but it is after the experience necessary to carry out the melting process in a crucible material, that emits hardly any or no disruptive substances. The already known crucibles made of very pure Silicon compounds z. B. used to melt optical glass can, suffice the unusual to be provided in the manufacture of semiconductor materials the high demands on the degree of purity of the crucible material are by no means there the impurities have to be so low that they cannot even be analyzed by spectral analysis can be proven. Also crucibles made of silicon dioxide, which are under transformation a hydrolyzable silicon compound, e.g. B. silicon tetrachloride produced could not be used because of the impurities. From the same The reason also turned out to be multilayered Crucible with linings of graphite as unsuitable for melting semiconductor materials.
Erfindungsgemäß wird deshalb ein Tiegel aus einer sehr reinen Siliziumverbindung auf seiner Infenseite mit einer Schicht aus besonders reinem Siliziumdioxyd überzogen, das durch Rektifikation von Siliziumtetrachlorid und anschließender Hydrolyse mit reinstem Wasser gewonnen wird.-Bei diesem Prozeß entsteht eine gelarti.ge Masse, die auf die Innenseite des Tiegels aufgebracht und dort bei etwa i2oo bis 1400° C eingesintert wird.According to the invention, therefore, a crucible is made from a very pure silicon compound coated on its inf side with a layer of particularly pure silicon dioxide, that by rectification of silicon tetrachloride and subsequent hydrolysis with purest water is obtained.-During this process a gel-like mass is created which is applied to the inside of the crucible and there at about i2oo to 1400 ° C is sintered in.
Der erfindungsgemäße Tiegel aus Quarz mit dem besonders reinen Innenüberzug aus Siliziurndioxyd wird dann zum Schmelzen von Silizium zweckmäßig in einen härteren Tiegel aus reinem Aluminiumoxyd oder reinem Graphit hineingestellt, um dadurch unerwünschte Formänderungen des Quarztiegels zu vermeiden.The crucible according to the invention made of quartz with the particularly pure inner coating Silicon dioxide is then expediently used for melting silicon into a harder one Crucibles made of pure aluminum oxide or pure graphite are placed in them to avoid unwanted effects Avoid changes in shape of the quartz crucible.
Im Sinne der Erfindung liegt es auch, als TiegelmateTial Siliziumkarbid zu verwenden, das aus reinstem Silizium und ebenso reinem Kohlenstoff durch Reaktion bei etwa r2oo° C hergestellt wird. Zum Formen und Sintern eines solchen Tiegels können -die üblichen Mittel und Methoden herangezogen werden.It is also within the meaning of the invention to use silicon carbide as the crucible material to use the one made of the purest silicon and just as pure carbon by reaction is produced at around r2oo ° C. For forming and sintering such a crucible the usual means and methods can be used.
Ein aus Siliziumkarbid bestehender Tiegel ist sowohl zur direkten Aufnahme des Schmelzgutes als auch als Mantel zum Hineinstellen eines Quarztiegels der oben näher angegebenen Art geeignet. Bei direkter Benutzung des Tiegels zum Schmelzen des Halbleitermaterials wird man ebenso wie bei dem Tiegel aus Quarz zweckmäßig einen Innenüberzug aus der gelartigen Masse verwenden, die wie oben beschrieben erzeugt und auf die Tiegelwandung aufgebracht werden kann.A crucible made of silicon carbide can be used both for direct Holds the material to be melted as well as a jacket for placing a quartz crucible of the type specified above are suitable. When using the crucible directly for Melting the semiconductor material becomes expedient just as with the quartz crucible Use an inner coating of the gel-like mass, as described above can be generated and applied to the crucible wall.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32979A DE962868C (en) | 1953-04-09 | 1953-04-09 | Crucibles for the production of the purest semiconductor material, especially silicon and its use |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32979A DE962868C (en) | 1953-04-09 | 1953-04-09 | Crucibles for the production of the purest semiconductor material, especially silicon and its use |
Publications (1)
Publication Number | Publication Date |
---|---|
DE962868C true DE962868C (en) | 1957-04-25 |
Family
ID=7481029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES32979A Expired DE962868C (en) | 1953-04-09 | 1953-04-09 | Crucibles for the production of the purest semiconductor material, especially silicon and its use |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE962868C (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1222482B (en) * | 1958-07-25 | 1966-08-11 | Gen Electric | Process for the production of a high purity silicon body |
DE2928089A1 (en) * | 1979-07-12 | 1981-01-15 | Heraeus Schott Quarzschmelze | POT FOR SEMICONDUCTOR TECHNOLOGICAL PURPOSES AND METHOD FOR PRODUCING THE POT |
US5009863A (en) * | 1988-11-11 | 1991-04-23 | Nkk Corporation | Apparatus for manufacturing silicon single crystals |
WO2005106084A1 (en) * | 2004-04-29 | 2005-11-10 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
WO2007080120A1 (en) * | 2006-01-12 | 2007-07-19 | Vesuvius Crucible Company | Crucible for the treatment of molten silicon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE484386C (en) * | 1927-06-04 | 1929-10-22 | Siemens Schuckertwerke Akt Ges | Crucible made up of two or more layers of different materials |
FR712362A (en) * | 1930-03-01 | 1931-10-01 | Jenaer Glaswerk Schott & Gen | Shaft furnace for melting glass and other similar materials |
DE638955C (en) * | 1934-08-27 | 1936-11-25 | Corning Glass Works | Process for the production of transparent objects from silica |
-
1953
- 1953-04-09 DE DES32979A patent/DE962868C/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE484386C (en) * | 1927-06-04 | 1929-10-22 | Siemens Schuckertwerke Akt Ges | Crucible made up of two or more layers of different materials |
FR712362A (en) * | 1930-03-01 | 1931-10-01 | Jenaer Glaswerk Schott & Gen | Shaft furnace for melting glass and other similar materials |
DE638955C (en) * | 1934-08-27 | 1936-11-25 | Corning Glass Works | Process for the production of transparent objects from silica |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1222482B (en) * | 1958-07-25 | 1966-08-11 | Gen Electric | Process for the production of a high purity silicon body |
DE2928089A1 (en) * | 1979-07-12 | 1981-01-15 | Heraeus Schott Quarzschmelze | POT FOR SEMICONDUCTOR TECHNOLOGICAL PURPOSES AND METHOD FOR PRODUCING THE POT |
US4528163A (en) * | 1979-07-12 | 1985-07-09 | Heraeus Quarzschmelze Gmbh | Crucible for semiconductor manufacturing purposes and a process for manufacturing the crucible |
US5009863A (en) * | 1988-11-11 | 1991-04-23 | Nkk Corporation | Apparatus for manufacturing silicon single crystals |
WO2005106084A1 (en) * | 2004-04-29 | 2005-11-10 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
US7378128B2 (en) | 2004-04-29 | 2008-05-27 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
WO2007080120A1 (en) * | 2006-01-12 | 2007-07-19 | Vesuvius Crucible Company | Crucible for the treatment of molten silicon |
EP1811064A1 (en) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Crucible for treating molten silicon |
US7833490B2 (en) | 2006-01-12 | 2010-11-16 | Vesuvius Crucible Company | Crucible for the treatment of molten silicon |
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