DE961468C - Electrically asymmetrical conductive system with a conical or cutting edge tapered semiconductor block - Google Patents
Electrically asymmetrical conductive system with a conical or cutting edge tapered semiconductor blockInfo
- Publication number
- DE961468C DE961468C DES28346A DES0028346A DE961468C DE 961468 C DE961468 C DE 961468C DE S28346 A DES28346 A DE S28346A DE S0028346 A DES0028346 A DE S0028346A DE 961468 C DE961468 C DE 961468C
- Authority
- DE
- Germany
- Prior art keywords
- metal foil
- conductive system
- cutting edge
- semiconductor block
- elastically deformable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 14
- 238000004049 embossing Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
Description
Elektrisch unsymmetrisch leitende Systeme insbesondere Halbleiterdioden, besitzen zur Erzielung des Punktkontaktes mit dem Halbleiterblock eine Metallfeder, deren Induktivität sich in dem Zentimeterwellengebiet störend bemerkbar macht. Dieser Nachteil ist zum Teil dadurch beseitigt worden, daß der Halbleiter sich kegel- oder schneidenförmig verjüngend ausgebildet und auf eine als Gegenelektrode dienende Metallplatte ίο aufgesetzt wurde. Dies hatte jedoch den Nachteil, daß ein guter elektrischer Kontakt zwischen der starren Metallplatte und der ebenfalls starren Halbleiterelektrode nicht gewährleistet war.Electrically asymmetrically conductive systems, in particular semiconductor diodes, have to achieve this of the point contact with the semiconductor block is a metal spring, the inductance of which is in makes the centimeter wave area disturbingly noticeable. This disadvantage is in part because of this has been eliminated that the semiconductor is conical or cutting edge tapered and was placed on a metal plate serving as a counter electrode ίο. However, this had the disadvantage that a good electrical contact between the rigid metal plate and the also rigid Semiconductor electrode was not guaranteed.
Die Erfindung bezieht sich auf ein elektrisch unsymmetrisch leitendes System mit einem sich kegel- oder schneidenförmig verjüngenden Halbleiterblock, welcher elektrischen Kontakt mit einer fest eingespannten elastisch deformierbaren Metallfolie bildet.The invention relates to an electrically asymmetrically conductive system with a conical or cutting edge tapering semiconductor block, which electrical contact with a firmly clamped, elastically deformable metal foil forms.
Gemäß der Erfindung wird die erwähnte Aufgabe zur Erzielung eines möglichst induktivitätsfreien Halbleitergleichrichters unter Vermeidung des Nachteils der bekannten Einrichtung dadurch gelöst, daß die nahezu punktförmige Spitze bzw. nahezu lineare Schneide die Metallfolie auf bzw. längs ihrer Fläche — d. h. entfernt von ihrer Kante — unter Druck berührt und die Metallfolie elastisch deformiert ist. Diese Einrichtung unterscheidet sich gleichzeitig vorteilhaft von einer anderen an sich bekannten Einrichtung, bei welcher ebenfalls ein sich kegel- oder schneidenförmig verjüngender Halbleiterblock mit einer fest eingespannten, elastisch deformierbaren Metallfolie Kontakt bildet; bei der bekannten Einrichtung dieser Art wurde nämlich der Kontakt zwischen dem Halbleiterblock und der Metallfolie an deren Kante bewirkt, wodurch zwar eine punktförmige Berührung erzielt wurde, jedoch gleichzeitig eine Erhöhung der Selbstinduktion die Folge war, während durch die Maßnahmei nach der Erfindung die Selbstinduktion verringert wird, weil die Halblei terspiitze bzw. Halbleiter schneide die Folienfläche berührt. Durch deren Elastizität ist ein guter Kontakt gewährleistet.According to the invention, the above-mentioned object is to achieve as inductivity-free as possible Semiconductor rectifier thereby avoiding the disadvantage of the known device solved that the almost punctiform tip or almost linear cutting edge the metal foil on or along its surface - d. H. away from its edge - under pressure and touches the metal foil is elastically deformed. At the same time, this device differs advantageously from one other known device, in which also a conical or cutting edge Tapered semiconductor block with a firmly clamped, elastically deformable metal foil Contact forms; In the known device of this type, namely, the contact between causes the semiconductor block and the metal foil at the edge, whereby although a punctiform Contact was achieved, but at the same time an increase in self-induction was the result, while the self-induction is reduced by the measure according to the invention, because the Semiconductor tip or semiconductor cut the foil surface touched. Their elasticity ensures good contact.
Die Erfindung wird an Hand zweier in den Fig. ι und 2 dargestellter Ausführungsbeispiele noch näher erläutert. In der Schaltungsanordnung nach Fig. 1 weist die nichtsperrende Elektrode B1, die, z. B. mit einem Gewinde G1 versehen, in einen zylinderförmig ausgebildeten Isolierkörper / eingeschraubt wird, eine Verjüngung ihrer Querschnittsfläche von dem zur Befestigung in dem Isoliermaterial / vorzusehenden Gewinde G1 nach der Grenzfläche F hin auf, auf der der Halbleiterblock H befestigt ist. Der Isolierkörper, der beispielsweise mit einem Außengewinde G2 versehen ist, wird in einen metallisch leitenden Haltekörper K eingeschraubt, wodurch die elastisch deformierbare Metallfolie M fest eingespannt ist. Der Haltekörper K erhält eine Aussparung A, die der Metallfolie die elastische Deformation ermöglicht. The invention is explained in more detail using two exemplary embodiments shown in FIGS. In the circuit arrangement according to FIG. 1, the non-blocking electrode B 1 , which, for. B. provided with a thread G 1 , is screwed into a cylinder-shaped insulating body /, a tapering of its cross-sectional area from the thread G 1 to be provided for fastening in the insulating material / towards the interface F on which the semiconductor block H is fastened. The insulating body, which is provided, for example, with an external thread G 2 , is screwed into a metallically conductive holding body K , as a result of which the elastically deformable metal foil M is firmly clamped. The holding body K is given a recess A, which enables the metal foil to undergo elastic deformation.
In der Anordnung nach Fig. 2 ist zur Verkleinerung der Schaltkapazität eine Membran M mit schneidenförmiger Erhöhung 5" angeordnet, gegen die der Halbleiterblock H gedrückt wird, bei Ausführung mit Schneide vorzugsweise so, daß die beiden Schneiden etwa rechtwinklig zueinander sich kreuzen. Die schneidenförmige Erhöhung der Membran. M kann — außer in der oben bereits erwähnten Weise durch Aufsetzen eines prismatischen Körpers — gegebenenfalls auch durch entsprechende Formgebung der Membran selbst (Faltung, Prägung usw.) hergestellt sein.In the arrangement according to FIG. 2, a membrane M with a knife-edge elevation 5 "is arranged to reduce the switching capacitance, against which the semiconductor block H is pressed, preferably so that the two edges intersect approximately at right angles to one another The membrane M can - in addition to the above-mentioned manner by placing a prismatic body on top - optionally also be produced by corresponding shaping of the membrane itself (folding, embossing, etc.).
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES28346A DE961468C (en) | 1952-04-30 | 1952-04-30 | Electrically asymmetrical conductive system with a conical or cutting edge tapered semiconductor block |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES28346A DE961468C (en) | 1952-04-30 | 1952-04-30 | Electrically asymmetrical conductive system with a conical or cutting edge tapered semiconductor block |
Publications (1)
Publication Number | Publication Date |
---|---|
DE961468C true DE961468C (en) | 1957-04-04 |
Family
ID=7479400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES28346A Expired DE961468C (en) | 1952-04-30 | 1952-04-30 | Electrically asymmetrical conductive system with a conical or cutting edge tapered semiconductor block |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE961468C (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE201552C (en) * | 1906-03-23 |
-
1952
- 1952-04-30 DE DES28346A patent/DE961468C/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE201552C (en) * | 1906-03-23 |
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