DE939771C - Crucible for melting very pure metals or semiconductors - Google Patents

Crucible for melting very pure metals or semiconductors

Info

Publication number
DE939771C
DE939771C DE1951S0025159 DES0025159A DE939771C DE 939771 C DE939771 C DE 939771C DE 1951S0025159 DE1951S0025159 DE 1951S0025159 DE S0025159 A DES0025159 A DE S0025159A DE 939771 C DE939771 C DE 939771C
Authority
DE
Germany
Prior art keywords
crucible
melting
semiconductors
pure metals
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1951S0025159
Other languages
German (de)
Inventor
Arthur Dr Gaudlitz
Paul Ludwig Guenther
Georg Rosenberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1951S0025159 priority Critical patent/DE939771C/en
Application granted granted Critical
Publication of DE939771C publication Critical patent/DE939771C/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

Schmelztiegel zum Schmelzen sehr reiner Metalle oder Halbleiter Beim Schmelzen sehr reiner Metalle und Halbleiter, insbesondere bei Germanium, ist die Verhinderung der Aufnahme von Verunreinigungen aus dem Tiegelmaterial für die Herstellung brauchbarer Produkte unerläßlich. Selbst geringfügige Verunreinigungen, die aus dem Tiegelmaterial in die Schmelze gelangen, machen diese für die weitere Verwendung oft unbrauchbar. Die Verwendung von Quarz als Tiegelmaterial ist in vielen Fällen, z. B. bei Germaniumschmelzen, wegen der Reaktionsfähigkeit von Quarz mit geschmolzenem Germanium unzweckmäßig. Andererseits stößt die Herstellung von Gefäßen aus geeigneten Materialien, z. B. aus Magnesium- oder Aluminiumoxyd, auf große Schwierigkeiten. Erfindungsgemäß wird deshalb vorgeschlagen, die Schmelztiegel mindestens an den mit der Schmelze in Berührung kommenden Stellen mit einer Schicht aus einem oder mehreren schwer reduzierbaren Oxyden zu überziehen. Für Schmelztiegel zum Schmelzen von Germanium hat sich hierbei reine Magnesia als besonders geeignet erwiesen.Crucible for melting very pure metals or semiconductors Melting very pure metals and semiconductors, especially germanium, is the Prevents the absorption of impurities from the crucible material for manufacture usable products are indispensable. Even minor impurities that come out the crucible material get into the melt, make this for further use often unusable. The use of quartz as a crucible material is in many cases, z. B. in germanium melts, because of the reactivity of quartz with molten Germanium unsuitable. On the other hand, there is the production of vessels from suitable ones Materials, e.g. B. of magnesium or aluminum oxide, to great difficulties. According to the invention it is therefore proposed that the crucible at least to the with the melt in contact with a layer of one or to coat several difficult to reducible oxides. For crucibles for melting of germanium, pure magnesia has proven to be particularly suitable.

Die Herstellung solcher Überzüge kann z. B. dadurch erfolgen, daß man das oder die Oxyde mit einem Bindemittel zu einer insbesondere streichfähigen Paste vermengt und diese auf die Tiegelwandungen aufträgt. Danach wird das Bindemittel durch Erhitzen rückstandsfrei entfernt. Die Oxyde bilden dann eine die Tiegelwandung lückenlos überziehende Oxydschicht. Als Bindemittel zur Herstellung z. B. einer streichfähigen Paste kommen nur solche in Frage, die z. B. durch Erhitzen rückstandslos beseitigt werden können. Aus der Technik der Herstellung von Oxydkathoden ist die Verwendung von Nitrozelluloselacken für diese Zwecke bekannt. Es wird. deshalb vorgeschlagen, solche oder ähnliche organische Lacke, die die Eigenschaft haben, sich mit den Oxyden zu einer streichfähigen plastischen Paste anrühren und sich durch Erhitzen rückstandsfrei entfernen zu lassen, zu verwenden. Die Gefäßwandungen können außer' durch - Bestreichen mit der plastischen Masse auch durch Tauchen oder Spritzen überzogen werden.The production of such coatings can e.g. B. be done in that one or more oxides with a binder to a particularly spreadable one Mix the paste and apply it to the walls of the crucible. After that, the binder Removed residue-free by heating. The oxides then form the wall of the crucible Seamlessly covering oxide layer. As a binder for producing z. B. one Spreadable paste can only be used which z. B. residue-free by heating can be eliminated. From the technique of manufacturing oxide cathodes is the use known from nitrocellulose lacquers for these purposes. It will. therefore suggested such or similar organic paints that the property have to mix with the oxides to a spreadable plastic paste and can be removed by heating without leaving any residue. The vessel walls can besides' by - coating with the plastic mass also by dipping or Syringes are coated.

Die» Oxydschichten haften nach Abbrennen des Bindemittels an den Tiegelwandungen fest genug, um zahlreiche Schmelzen in einem so präparierten Tiegel durchführen zu können. Sie bieten bei Verwendung insbesondere sehr reiner Substanzen einen hervorragenden Schutz gegen den Einfluß .des Tiegelmaterials auf die Schmelze.The »oxide layers adhere to the crucible walls after the binder has burned off firm enough to carry out numerous melts in a crucible prepared in this way to be able to. When using very pure substances in particular, they offer an excellent one Protection against the influence of the crucible material on the melt.

Claims (3)

PATENTANSPRÜCHE: i. Schmelztiegel zum Schmelzen sehr reiner Metalle oder Halbleiter, insbesondere für Germanium, dadurch gekennzeichnet, daß er mindestens an den mit der Schmelze in Berührung kommenden Stellen mit einer Schicht aus einem oder mehreren durch die Schmelze und/oder das Tiegelmaterial schwer reduzierbaren Oxyden überzogen ist. PATENT CLAIMS: i. Crucible for melting very pure metals or semiconductors, in particular for germanium, characterized in that it is coated at least at the points in contact with the melt with a layer of one or more oxides which are difficult to reduce by the melt and / or the crucible material. 2. Schmelztiegel nach Anspruch t, gekennzeichnet durch die Verwendung von insbesondere reinster Magnesia als Überzugsmaterial. 2. Crucible according to claim t, characterized by the Use of especially pure magnesia as a coating material. 3. Verfahren zur Herstellung eines Schmelztiegelüberzuges nach Anspruch i oder 2, dadurch gekennzeichnet, daß das oder die Oxyde mit einem Bindemittel zu einer insbesondere streichfähigen Paste vermengt auf die Tiegelwandungen aufgetragen werden und danach das Bindemittel durch Erhitzen rückstandsfrei entfernt wird. q.. Verfahren nach Anspruch 3, gekennzeichnet durch die Verwendung von organischen, insbesondere Nitrozelluloselacken als Bindemittel.3. Procedure for the production of a crucible coating according to claim 1 or 2, characterized in that that the oxide or oxides with a binder to a particularly spreadable Paste can be mixed and applied to the crucible walls and then the binding agent is removed without residue by heating. q .. The method according to claim 3, characterized through the use of organic, in particular nitrocellulose, lacquers as binders.
DE1951S0025159 1951-10-13 1951-10-13 Crucible for melting very pure metals or semiconductors Expired DE939771C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1951S0025159 DE939771C (en) 1951-10-13 1951-10-13 Crucible for melting very pure metals or semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1951S0025159 DE939771C (en) 1951-10-13 1951-10-13 Crucible for melting very pure metals or semiconductors

Publications (1)

Publication Number Publication Date
DE939771C true DE939771C (en) 1956-03-01

Family

ID=7478212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1951S0025159 Expired DE939771C (en) 1951-10-13 1951-10-13 Crucible for melting very pure metals or semiconductors

Country Status (1)

Country Link
DE (1) DE939771C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1138514B (en) * 1956-06-13 1962-10-25 Siemens Ag Crucible for melting high-purity semiconductor materials
DE19806863A1 (en) * 1998-02-19 1999-08-26 Herbst Bremer Goldschlaegerei Metal melting process especially for melting titanium and its alloys in the production of dental castings

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1138514B (en) * 1956-06-13 1962-10-25 Siemens Ag Crucible for melting high-purity semiconductor materials
DE19806863A1 (en) * 1998-02-19 1999-08-26 Herbst Bremer Goldschlaegerei Metal melting process especially for melting titanium and its alloys in the production of dental castings

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