DE861717C - detector - Google Patents

detector

Info

Publication number
DE861717C
DE861717C DES10631D DES0010631D DE861717C DE 861717 C DE861717 C DE 861717C DE S10631 D DES10631 D DE S10631D DE S0010631 D DES0010631 D DE S0010631D DE 861717 C DE861717 C DE 861717C
Authority
DE
Germany
Prior art keywords
detector
tip
spring
carrier
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES10631D
Other languages
German (de)
Inventor
Otto Eisenschmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES10631D priority Critical patent/DE861717C/en
Application granted granted Critical
Publication of DE861717C publication Critical patent/DE861717C/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Leads Or Probes (AREA)

Description

Die Erfindung betrifft einen Detektor zum Nachweis und zur Messung elektrischtr Schwingungen, vorzugsweise im Gebiet kürzester Wellenlängen. Wenn man hei der Gleichrichtungg eines hochfrequenten Wechselstromes mittels eines Detektors eine hohe Richtspanfiung erreichen will, dann muß man dafür sorgen, daß die Resonanzfliequenz des Detektorgebildes möglichst hoch liegt, d. h. man Inuß sowohl seine Kapazität als auch seine Induktivität möglichst herabzusetzen suchen. Die Erfindung betrifft nun eine Detektorkonstruktion,' bei welcher eine Verkleinerung von Kapazität und Induktivität auf ein Mindestmaß in sehr (einfacher, herstellungstechnisch vorteilhafter Weise erreicht ist. Erfin,dungsgemäß, ist dic Diebektorfeder an einem vorzugsweise zylindrischen, zur Kristalloberfläche im wesentlichen senkrechten Haltestab befestigt, der in Ader Richtung nach der Detektorspitze zu verjüngt ist. Wie die' Konstruktion praktisch am besten ausgeführt wird, läßt sich aus der Zeichnung entheInnen. In dieser bedeutet i den im vorliegenden Fall zylindrischen Kristallträger mit dem. Kristall 2. Der Kristallträger i ist in ein Keramikrohr 3 oder ein Rohr aus einem anderen Isoherstoff eingesetzit# z. B. eingelötet. Zu. diesem Zweck gibt man dem Ker.amikrohr 3 einen Metallüberzug, der z. B. in Pulverform (mit (einem Bindemittel) aufgebracht und in. die Kexamikoberfläche eingebrannt wird. Ein solcher überzug ist sehr gut für 'die Hartlötung geeignet. Gegenüber dern Dietektorkristall 2 stellt die auf dem Spitzenträger 4 befestigte Dietektorspitze 5. Der Spitzenträger 4 ist aus #drei Abs,ätz,en gebildet. dem ül das Keramikrohr ieinge-1,5teten Stab 6 und zwei Ansätzen 7 und 8, welche derartige Durchmesser haben, daß sich eine Verjüngungdes Trägers in Richtung der Detektorspitze ergibt. Zur Stromleitung dient also der Stab 6- (mit seinen Ansätzen), dessen Durchmesser ein Vielfaches des Durchmessers der Detektorfeder beträgt, die Induktivität ist also klein. Eine weitere Wrbesserung in - dieser Richtung erzielt man dadurch, daß n= einen, und zwar am besten den größten Teil der Feder um den Ansatz 8 fest herumwickelt, dann fällt nämlich noch die Induktivität eines -roßen Teiles der Feder wez. Die Kapazität wird dabei fast ausschließlich durch das Fed#rende (die Detektorspitze) bestimmt, da der Spitz-enhalter infolge seiner Verjüngung zu der Kapazität praktiscli nichts heiträgt. Es gelingt also auf dies,(,-Weise, die Induktivität und die Kapazität gleichzeitig sehr klein zu, halten. Dabei ist ab-er auch die Gesamtanordnung sehr einfach. Der Detektor besteht aus wenigen, aber einfach herstellbaren. Teilen, die durch Löten zu einem haltbaren, geschlossenen Gebilde vexeinigt werden können.The invention relates to a detector for detecting and measuring electrical vibrations, preferably in the area of the shortest wavelengths. If you want to achieve a high directional voltage when rectifying a high-frequency alternating current by means of a detector, you must ensure that the resonance flux of the detector structure is as high as possible, i.e. H. one must try to reduce both its capacitance and its inductance as much as possible. The invention now relates to a detector construction in which a reduction in capacitance and inductance to a minimum is achieved in a very simple and advantageous manner in terms of production. which is tapered in the direction of the detector tip. How the construction is practically best carried out can be seen from the drawing, in which i means the crystal carrier, which is cylindrical in the present case, with crystal 2. The crystal carrier i is in one Ceramic tube 3 or a tube made of another insulating material, e.g. soldered in. For this purpose, the ceramic tube 3 is given a metal coating, which is applied, for example, in powder form (with (a binding agent)) and into the ceramic surface Such a coating is very suitable for brazing. Compared to Dietekt Orkristall 2 represents the Dietektor tip 5 attached to the tip carrier 4. The tip carrier 4 is made up of three abs, etching, en. the rod 6 , which is inserted into the ceramic tube, and two lugs 7 and 8, which have such a diameter that the support is tapered in the direction of the detector tip. The rod 6- (with its attachments), the diameter of which is a multiple of the diameter of the detector spring, is used to conduct electricity, so the inductance is small. Another Wrbesserung in - is achieved that direction characterized in that n =, though firmly wraps and a best the largest part of the spring around the neck 8, then the inductance falls namely, a part of the spring -roßen wez. The capacity is almost exclusively determined by the end of the spring (the detector tip), since the tip holder has practically nothing to do with the capacity due to its taper. In this way, it is possible to keep the inductance and the capacitance very small at the same time. At the same time, the overall arrangement is also very simple. The detector consists of a few, but easy-to-manufacture parts, which are closed by soldering can be combined into a durable, closed structure.

Claims (2)

PATENTANSPRüCHE- i. Detektor für sehr kurze elektrische Wellen,. ,dadurch gekennzeichnet, daß die Detektorfeder an einem vorzugsweise zylindrischen, zur Fläche des Detektorkristalls im wesentlichen senkrechten Haltestab befestigt ist, der in der Riclltung nach der Detektorspitze zu verjüngt ist. PATENT CLAIMS- i. Detector for very short electrical waves. , characterized in that the detector spring is attached to a preferably cylindrical holding rod which is essentially perpendicular to the surface of the detector crystal and which is tapered in the direction towards the detector tip. 2. Detektor nach Anspruch i, dadurch gekennzeichnet, daß der Spitzenträger aus mehreren aneinandergesetzten zyadrischen Teilen bestellt, deren Durchmesser nach -der Spitze hin abnimmt. 3. Detektor nach Anspruch i und 2, dadurch gekennzeichnet, daß der größere Teil der Feder eng um das zylindrische Ende des Federträgers herumgewickelt ist.2. Detector according to claim i, characterized in that the tip carrier is made up of several juxtaposed zyadric parts, the diameter of which decreases towards the tip. 3. Detector according to claim i and 2, characterized in that the greater part of the spring is wound tightly around the cylindrical end of the spring carrier.
DES10631D 1944-09-20 1944-09-20 detector Expired DE861717C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES10631D DE861717C (en) 1944-09-20 1944-09-20 detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES10631D DE861717C (en) 1944-09-20 1944-09-20 detector

Publications (1)

Publication Number Publication Date
DE861717C true DE861717C (en) 1953-01-05

Family

ID=7473385

Family Applications (1)

Application Number Title Priority Date Filing Date
DES10631D Expired DE861717C (en) 1944-09-20 1944-09-20 detector

Country Status (1)

Country Link
DE (1) DE861717C (en)

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