DE849913C - Electric semiconductor pressure cell with temperature compensation - Google Patents

Electric semiconductor pressure cell with temperature compensation

Info

Publication number
DE849913C
DE849913C DER5651A DER0005651A DE849913C DE 849913 C DE849913 C DE 849913C DE R5651 A DER5651 A DE R5651A DE R0005651 A DER0005651 A DE R0005651A DE 849913 C DE849913 C DE 849913C
Authority
DE
Germany
Prior art keywords
pressure cell
temperature compensation
semiconductor pressure
electric semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DER5651A
Other languages
German (de)
Inventor
Hans Dr-Ing Rumpff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DER5651A priority Critical patent/DE849913C/en
Application granted granted Critical
Publication of DE849913C publication Critical patent/DE849913C/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L23/00—Devices or apparatus for measuring or indicating or recording rapid changes, such as oscillations, in the pressure of steam, gas, or liquid; Indicators for determining work or energy of steam, internal-combustion, or other fluid-pressure engines from the condition of the working fluid
    • G01L23/08—Devices or apparatus for measuring or indicating or recording rapid changes, such as oscillations, in the pressure of steam, gas, or liquid; Indicators for determining work or energy of steam, internal-combustion, or other fluid-pressure engines from the condition of the working fluid operated electrically
    • G01L23/18—Devices or apparatus for measuring or indicating or recording rapid changes, such as oscillations, in the pressure of steam, gas, or liquid; Indicators for determining work or energy of steam, internal-combustion, or other fluid-pressure engines from the condition of the working fluid operated electrically by resistance strain gauges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Measurement Of Force In General (AREA)

Description

Elektrische Halbleiter-Druckmeßdose mit Temperaturausgleich In elektrischen Druckmeßdosen mit Halbleitern, besonders in solche mit Kunstkohle, verringert sich der ()Imlsclle \\'iderstatal durch 7,usammenpressen dieser Ilalhleiter. Erwärmt man eine solche Druckmeßdose, so erhöht sich deren elektrischer Widerstand infolge des sehr hohen elektischen Tempc ratu rkoeifiz ienten der Kunstkohle so beträchtlich, daß man eine Halbleitersäule dieser Art auch zu Temperaturmessungen benutzen kann.Electric semiconductor pressure cell with temperature compensation In electric Pressure cells with semiconductors, especially those with charcoal, are reduced der () Imlsclle \\ 'iderstatal through 7, squeezing this Ilalhleiter. Warmed up one such pressure cell increases its electrical resistance as a result the very high electrical temperature coefficient of the charcoal is so considerable, that you can use a semiconductor column of this type for temperature measurements.

Die Druckmessung wird durch diese Eigenschaft des Halbleiters jedoch wesentlich erschwert. Daher war es bisher notwendig, eine solcheDruckmeßdose ffir eine bestimmte Meßtemperatur zu bauen und zu eichen. Diese Schwierigkeit, welche die Verwendung solcher Druckmeßdosen sehr behindert, wird durch die nachstehende Erfindung beseitigt.The pressure measurement is however due to this property of the semiconductor made much more difficult. Therefore, it has hitherto been necessary to provide such a pressure cell for to build and calibrate a certain measuring temperature. This difficulty which one the use of such pressure cells is greatly hampered by the following Invention eliminated.

Der durch die Erwärmung der Halbleitersäule gestiegene Widerstand kann dadurch wieder kompensiert werden, daß man die Säule mechanisch mit einer solchen Kraft zusätzlich zusammendrsückt, daß durch diese Pressung der ursprünglich eingestellte Widerstandswert erhalten bleibt. Ein bequemes Mittel, um eine solche automatische, mechanische Pressung zu bewirken, bietet ein in die Meßdose eingebauter, metallischer Körper, welcher sich bei Erwärmung um eine seinem Ausdehnungskoeffizienten entsprechende Länge ausdehnt und dabei gegen die eingespannte Halbleitersäule drückt. Durch Wahl geeigneten Materials für diesen Ausdehnungskörper sowie Bemessung seiner wirksamen Länge kann man es erreichen, daß die Halhleitersäule ihren z. B. bei Zimmertemperatur eingestellten elektrischen Widerstand auch bei jeder höheren Temperatur beibehält und damit die Druckmessung gegeroülber Wärmeeinflüssen unabhängig macht. The increased resistance due to the heating of the semiconductor column can thereby be compensated again that you mechanically the column with such a Force additionally compresses that by this pressing the originally set Resistance value is retained. A convenient means of making such an automatic, To bring about mechanical pressure, offers a built into the load cell, metallic Body, which when heated by a coefficient of expansion corresponding to its Length expands and thereby presses against the clamped semiconductor column. By choice suitable material for this expansion body as well as dimensioning its effective Length can be achieved that the semiconductor column z. B. at room temperature set electrical resistance is maintained even at any higher temperature and thus the Makes pressure measurement independent of the influence of heat.

PATENTANSRUCH: Blektrische Druckmeßdose mit Halbleitern, deren Ohmscher Widerstand sich mit der Be- PATENT CLAIM: Metallic pressure cell with semiconductors, their ohmic shear Resistance to the

Claims (1)

lastung durch mechanischen Druck sowie durch Erwärmung verändert, dadurch gekennzeichnet, daß die durch die Erwärmung des Halbleiters hetvorgerufene Widerstandsänderung dadurch ausgeglichen wird, daß in der Meßdose ein bei Erwärmung sich ausdehnender Körper befindet, welcher bei seiner thermischen Ausdehnung die Halbleitersäule zusammendrückt.load changed by mechanical pressure as well as by heating, characterized in that the one caused by the heating of the semiconductor The change in resistance is compensated for by the fact that in the load cell there is a heating effect expanding body is, which with its thermal expansion the Semiconductor column compresses.
DER5651A 1951-03-29 1951-03-29 Electric semiconductor pressure cell with temperature compensation Expired DE849913C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DER5651A DE849913C (en) 1951-03-29 1951-03-29 Electric semiconductor pressure cell with temperature compensation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DER5651A DE849913C (en) 1951-03-29 1951-03-29 Electric semiconductor pressure cell with temperature compensation

Publications (1)

Publication Number Publication Date
DE849913C true DE849913C (en) 1952-09-18

Family

ID=7397024

Family Applications (1)

Application Number Title Priority Date Filing Date
DER5651A Expired DE849913C (en) 1951-03-29 1951-03-29 Electric semiconductor pressure cell with temperature compensation

Country Status (1)

Country Link
DE (1) DE849913C (en)

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