DE833229C - Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like. - Google Patents

Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like.

Info

Publication number
DE833229C
DE833229C DES18056A DES0018056A DE833229C DE 833229 C DE833229 C DE 833229C DE S18056 A DES18056 A DE S18056A DE S0018056 A DES0018056 A DE S0018056A DE 833229 C DE833229 C DE 833229C
Authority
DE
Germany
Prior art keywords
crystal
heated
point
amplifiers
contact tips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES18056A
Other languages
German (de)
Inventor
Dr Heinz Henker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to DES18056A priority Critical patent/DE833229C/en
Application granted granted Critical
Publication of DE833229C publication Critical patent/DE833229C/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Thyristors (AREA)

Description

Verfahren zur Herstellung von Kontaktspitzen für Kristallgleichrichter, Kristallverstärker o. dgl. 1)ie Spitzciikoiitakte für Kristallgleichrichter odei--verstärker (Transistoren) müssen möglichst punktförmig sein und einen genau definierten Kontakt mit (lern Halbleiterkristall bilden. Die I?rtindung gibt ein Verfahren zur Herstellung solcher Spitzen an, (las trotz seiner Einfachheit einwandfreie Spitzen herzustellen gestattet. Sie schlägt vor, einen Draht an der Stelle, wo er eine Spitze bilden soll, so weit zu erhitzen, daß er weich wird, und ihn zu zerreißen. Die erwärmte Stelle des Drahtes zieht sich dabei zu einer sehr guten kegelförmigen Spitze aus. Wichtig ist dabei, daß der Draht genügend hoch erwärmt wird, so daß keine großen Kräfte zum Zerreißen mehr notwendig sind. Wird diese Vorschrift nicht beachtet und der Draht nicht oder nur wenig erwärmt, dann entsteht nämlich keine Spitze, sondern eine ziemlich große Bruchfläche, die keinen genügend definierten Kontakt mit (lern Halbleiterkristall bildet. Andererseits empfiehlt es sich auch bei den meisten Metallen, den Draht nicht so weit zu erwärmen, daß das Metall fließt und dadurch z. B. Tropfen am Drahtende entstehen. Hierdurch würde nämlich die Spitze wieder verflacht und kein Punktkontakt beim Aufsetzen auf den Halbleiter erzielt werden. Der Grad der Erwärmung richtet sich nach dem verwendeten Drahtmetall. Als Beispiele seien angegeben, daß Platin und dessen Legierungen bei heller Rotglut, Wolfram und Molybdän bei Gelb- bis Weißglut sehr gute Spitzen ergeben. Die Erwärmung kann z. B. durch eine kleine Flamme oder durch Stromdurchgang erfolgen.Process for the production of contact tips for crystal rectifiers, Crystal amplifiers or the like 1) The pointed clocks for crystal rectifiers or amplifiers (Transistors) must be as punctiform as possible and have a precisely defined contact with (learn to form semiconductor crystals. The connection is a method of manufacturing such tips, (read to make perfect tips despite its simplicity allowed. She suggests putting a wire at the point where it will form a point to heat it so that it becomes soft and to tear it apart. The warmed The point of the wire pulls out to a very good conical point. It is important that the wire is heated sufficiently so that there are no large ones Forces to tear apart are more necessary. If this regulation is not observed and If the wire is not heated or only slightly heated, then there is no point, but rather a rather large fracture surface that does not have a sufficiently defined contact with (learn Semiconductor crystal forms. On the other hand, it is also recommended for most metals, not to heat the wire so far that the metal flows and thereby z. B. Drops arise at the end of the wire. This would namely flatten the tip again and no point contact can be achieved when placing it on the semiconductor. The degree of Heating depends on the wire metal used. Examples are: that platinum and its alloys in bright red heat, tungsten and molybdenum in yellow until incandescent produce very good tips. The warming can z. B. by means of a small flame or the passage of electricity.

Claims (3)

PATENTANSPRVCHE: i. Verfahren zur Herstellung der Kontaktspitzen für Kristallgleichrichter oder -verstärker o. dgl., dadurch gekennzeichnet, daß ein Draht an der Stelle, an der eine Spitze entstehen soll, Zugkräften ausgesetzt und so weit erwärmt wird, daß er bei geringen Zugkräften unter Spitzenbildung zerreißt. PATENT CLAIMS: i. Method of making the contact tips for Crystal rectifier or amplifier o. The like., Characterized in that a Wire exposed to tensile forces at the point where a point is to be formed is heated so far that it tears at low tensile forces with the formation of peaks. 2. Verfahren nach Anspruch i, dadurch gekennzeichnet, daß ei» aus Platin oder dessen Legierungen bestehender 1)ralit auf helle Rotglut erhitzt wird. 2. The method according to claim i, characterized in that egg »made of platinum or its Alloys of existing 1) ralit is heated to bright red heat. 3. Verfahren nach Anspruch i, dadurch gekennzeichnet, daß ein aus \\'olfram, 1lolybdän oder ähnlichen ldartmetalleii oder ihren Legierungen bestehender 1)ralit auf Gell)- bis Weißglut erhitzt wird. ,4. Verfahren nach _\iisl»-ucl1 r, 2 oder 3, dadurch gekennzeichnet, daß der Draht durch einen ihn durchfließenden Stron an der Rißstelle erhitzt wird.3. Procedure according to Claim i, characterized in that one made of olfram, molybdenum or the like ldartmetalleii or their alloys existing 1) ralit on gel) - to white heat is heated. , 4. Method according to _ \ iisl »-ucl1 r, 2 or 3, characterized in that that the wire is heated at the point of the crack by a current flowing through it.
DES18056A 1950-07-30 1950-07-30 Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like. Expired DE833229C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES18056A DE833229C (en) 1950-07-30 1950-07-30 Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES18056A DE833229C (en) 1950-07-30 1950-07-30 Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like.

Publications (1)

Publication Number Publication Date
DE833229C true DE833229C (en) 1952-03-06

Family

ID=7475534

Family Applications (1)

Application Number Title Priority Date Filing Date
DES18056A Expired DE833229C (en) 1950-07-30 1950-07-30 Process for the production of contact tips for crystal rectifiers, crystal amplifiers or the like.

Country Status (1)

Country Link
DE (1) DE833229C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208821B (en) * 1961-09-29 1966-01-13 Philips Nv Process for manufacturing tip electrodes for semiconductor components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208821B (en) * 1961-09-29 1966-01-13 Philips Nv Process for manufacturing tip electrodes for semiconductor components

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