DE8329993U1 - Integrated building block - Google Patents

Integrated building block

Info

Publication number
DE8329993U1
DE8329993U1 DE8329993U DE8329993DU DE8329993U1 DE 8329993 U1 DE8329993 U1 DE 8329993U1 DE 8329993 U DE8329993 U DE 8329993U DE 8329993D U DE8329993D U DE 8329993DU DE 8329993 U1 DE8329993 U1 DE 8329993U1
Authority
DE
Germany
Prior art keywords
metal
capacitor
integrated module
metal plate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8329993U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Metz Apparatewerk Inh Paul Metz
Original Assignee
Metz Apparatewerk Inh Paul Metz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE8329993U1 publication Critical patent/DE8329993U1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

METZ Apparatewerke " *..*METZ Apparatewerke "* .. *

Inh . Paul Me tz .!, ', J*Owner Paul Me tz.!, ', J *

Integrierter BausteinIntegrated building block

Die Erfindung betrifft einen in einen Kunststoffkörper eingebetteten integrierten Baustein mit einem auf einer Metall- \}f platte unlösbar verbunden aufliegenden Halbleiterchip, mit | einseitig aus dem Kunststoffkörper herausragenden Metall* fahnen und mit Verbindungsdrähten, die einerseits auf Anschlußkontakten des Ha Ib Leiterchips und andererseits auf den innerhalb des Kunststoffkörpers verlaufenden Teilen der Metallfahnen angeschweißt sind.The invention relates to an embedded in a plastic body with an integrated module on a metal \ f} plate resting permanently connected semiconductor chip, with | Metal flags protruding on one side from the plastic body and with connecting wires which are welded on the one hand to connection contacts of the Ha Ib conductor chip and on the other hand to the parts of the metal flags that run inside the plastic body.

Integrierte Bausteine der vorstehend beschriebenen Art .Integrated modules of the type described above.

werden häufig auch in der Digitaltechnik verwendet/ zum Bei- ifare often also used in digital technology / as an aid

spiel in Mikrocomputern, wobei in den Ha Ib Lei terchi ps Im- ijgame in microcomputers, with the Ha Ib Lei terchi ps Im- ij

pulse mit sehr steilen Flanken auftreten. Diese steilen ;£ pulse occur with very steep edges. These steep ; £

Flanken bestehen aus einem Oberwellenspektrum, das sehr ■';Edges consist of a harmonic spectrum that is very ■ ';

hohe Frequenzen enthält und insbesondere über die die Versorgungsspannung führenden Anschlüsse in die Umgebung weitergeleitet oder direkt abgestrahlt wird.Contains high frequencies and, in particular, is passed on to the environment or emitted directly via the connections carrying the supply voltage.

Dieses Oberwellenspektrum kann in der Nähe befindliche Tonoder Fernsehrundfunkempfänger stören, wenn die in den Empfängern verarbeiteten Frequenzbereiche in dem Oberwellenspektrum enthalten sind. Diese Störungen machen sich beson-This harmonic spectrum can interfere with nearby audio or television broadcast receivers if the frequency ranges processed in the receivers are contained in the harmonic spectrum. These disorders are particularly ders dann sehr stark sowohl im Fernsehbild als auch im Ton bemerkbar, wenn diese integrierten Bausteine in den betreffenden Fernsehrundfunkempfängern eingebaut sind, zum Beispiel in den Geräteteilen für die vorprogrammierte Senderwahl oder für Videotext- und Bildschirmtext.This is then very strong both in the television picture and in the sound noticeable when these integrated modules are built into the relevant television broadcast receivers, for example in the device parts for preprogrammed station selection or for teletext and video text.

Andererseits besteht auch die Gefahr, daß die Störfelder der Ablenkschaltung eines Fernseh rundfunkempfänger in den HaLb Leiterchiρ einstrahlen und dessen Funktion ungünstig beei nflussen.On the other hand, there is also the risk that the interference fields of the deflection circuit of a television radio receiver in the Irradiate Halb Leiterchiρ and its function is unfavorable influence.

..P.8308_..P.8308_

METZ Apparatewerke Inh. Paul MetzMETZ Apparatewerke Owner Paul Metz

Um diese Störungen zu verringern, ist es bekannt, durch einen außerhalb des integrierten Bausteines angeordneten Kondensator, der zwischen die die Versorgungsspannung führende Leitung und Masse geschaltet ist, das Oberwel lenspektrum teilweise zy unterdrücken. Diese Maßnahme reicht aber oft nicht aus, weil zwischen der Quelle des Oberwellenspektrums und dem Kondensator, der die hohen Frequenzen dieses Spektrums kurzschließen soll, eine lange Zuleitung liegt, die als induktiver Widerstand wirkt und einen KurzschlußIn order to reduce this interference, it is known to use a device arranged outside the integrated module Capacitor, which is connected between the line carrying the supply voltage and ground, partially suppress the Oberwel lenspektrum zy. But this measure is enough often not because between the source of the harmonic spectrum and the capacitor, which the high frequencies of this Short-circuit the spectrum, there is a long lead, which acts as an inductive resistor and a short circuit der hohen Frequenzen an der Quelle verhindert, so daß diese von dem Halbleiterchip oder von der Zuleitung weiterhin abgestrahlt werden. Das hat zur Folge, daß die Störungen in den Empfängern nur kleiner werden, aber nicht völlig beseitigt werden können.the high frequencies at the source prevented so this from the semiconductor chip or from the supply line be emitted. As a result, the disturbances only become smaller in the receivers, but cannot be completely eliminated.

Ferner ist bekannt, zur Verminderung von Störungen den gesamten integrierten Baustein in einen Metallkasten einzubauen und nur die Anschlußfahnen durch entsprechende öffnungen herauszuführen. Diese Methode ist sehr aufwendigIt is also known to install the entire integrated module in a metal box and to lead out only the terminal lugs through corresponding openings in order to reduce interference. This method is very complex und in der Praxis nur sehr arbeitsintensiv einsetzbar.and can only be used very labor-intensive in practice.

Hier will die Erfindung Abhilfe schaffen. Der Erfindung, wie sie in den Ansprüchen gekennzeichnet ist, liegt die Aufgabe zugrunde, die vorstehend beschriebenen Nachteile auf einfache Weise zu vermeiden und die Abstrahlung des Oberwellenspektrums integrierter Bausteine weitgehend zu verhindern.The invention aims to provide a remedy here. The invention, as it is characterized in the claims, lies the The object is to avoid the disadvantages described above in a simple manner and to reduce the radiation of the To largely prevent harmonic spectrum of integrated components.

Die mit der Erfindung erzielten Vorteile bestehen insbesondere darin, daß die integrierten Bausteine an jederThe advantages achieved by the invention are in particular that the integrated modules on each Stelle eines Fernsehgerätes eingebaut werden können, ohne daß sich dadurch im Bild oder im Ton irgend welche Störungen bemerkbar machen und ohne daß der integrierte Baustein durch vom Fernsehgerät ausgehende Störfelder in seiner Funktion gestört wird.Place of a television set can be installed without any disturbances in the picture or in the sound being noticeable and without the integrated module being affected by interference fields emanating from the television set its function is disturbed.

P 8308P 8308

METZ Apparatewerke Inh. Paul MetzMETZ Apparatewerke Owner Paul Metz

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und wird im folgenden näher beschrieben.An embodiment of the invention is shown in the drawing and is described in more detail below.

Innerhalb eines Kunststoffkörpers 1 befindet sich ein integrierter Baustein/ bestohend aus einem auf einer Metallplatte 2 unlösbar verbunden aufliegenden Halb Leiterchip 3, aus einseitig aus dem Kunststoffkörper 1 herausragenden Metällfahnen 4a, Ab, ..·, 4k, die der Versorgungsspartnungs- und SignaIzuführung dienen, sowie aus Verbindungsdrähten 5a, 5b, .-., 5k, die einerseits auf Anschlußkontakten 6a, 6b, ..., 6k des Halbleiterchips 3 und andererseits auf den innerhalb des Kunststoffkörpers 1 verlaufenden Teilen der Metallfahnen 4a, 4b, ··., 4k angeschweißt sind.Inside a plastic body 1 there is an integrated module / consisting of a semi-conductor chip 3 which is inextricably connected to a metal plate 2, from one side protruding from the plastic body 1 Metal flags 4a, Ab, .. ·, 4k, the supply savings and signal feed, as well as connecting wires 5a, 5b, .-., 5k, on the one hand on connection contacts 6a, 6b, ..., 6k of the semiconductor chip 3 and on the other hand on the within the plastic body 1 extending parts of the Metal lugs 4a, 4b, ··., 4k are welded on.

Der HaIb Lei te rc hi ρ 3 ist unter Aussparung der Anschlußkontakte 6a, 6b, ..., 6k mit einer Isolierschicht 8, zum Beispiel aus Si Ii zi umo>ti d, überzogen, auf die eine Metallschicht 7, zum Beispiel eine A luminium3chicht, aufgedampft ist. Ein Verbindungsdraht 9, der mit einem Ende an derThe half conductor rc hi ρ 3 is covered with an insulating layer 8, for example made of Si Ii umo> ti d, with a cutout for the connection contacts 6a, 6b, ..., 6k, on which a metal layer 7, for example an A. aluminum layer, vapor-deposited is. A connecting wire 9, which has one end to the Metallschicht 7 und mit dem anderen Ende an der Metallplatte 2 angeschweißt ist, sorgt für eine elektrische Verbindung, so daß die Metallschicht 7 als Abschirmung gegen Störstrahlungen wirkt.Metal layer 7 and at the other end on the metal plate 2 is welded on, provides an electrical connection, so that the metal layer 7 acts as a shield against interference radiation.

Ferner ist innerhalb des Kunststoffkörpers 1 neben dem Halbleiterchip 3 ein Miniaturchipkondensator 11 angeordnet, wobei der eine Anschlußkontakt 12 mit der Metallplatte 2 und der andere Anschlußkontakt 13 mit der die Versorgungsspannung führenden HetaLlfahne 4a unlösbar verbunden, zum Bei-Furthermore, a miniature chip capacitor 11 is arranged inside the plastic body 1 next to the semiconductor chip 3, the one connection contact 12 with the metal plate 2 and the other connection contact 13 is permanently connected to the HetaLlfhne 4a carrying the supply voltage, for spiel verlötet ist.game is soldered.

Durch den geringen räumlichen Abstand zwischen dem Halbleiterchip 3 und dem Kondensator 11 werden die Verbindungsleitungen sehr kurz. Dadurch wird erreicht, daß die Abstrah-Lung der hohen Frequenzen des OberweLLenspektrums durch diese Leitungen wesentlich herabgesetzt wird.Due to the small spatial distance between the semiconductor chip 3 and the capacitor 11, the connecting lines are very short. This ensures that the abstraction of the high frequencies of the upper wave spectrum through these lines is significantly reduced.

.P S.30S.P P.30S

METZ Apparatewerke I/lh. Paul MetzMETZ Apparatewerke I / lh. Paul Metz

Eine noch bessere Wirkung wird erzielt, wenn der Kondensator integraler Bestandteil cies Ha Ib lei terchi ps 3 ist, zum Beispiel ein Siliziumoxidkondensator 10. Hierbei hat die Zuleitung zur Quelle des Oberwellenspektrums nur noch eine Länge von weniger als einen Millimeter/ so daß keine störenden Oberwellen mehr über den Verbindungsdraht 5a und die Anschlußfahne 4a in die Umgebung gelangen können.An even better effect is achieved if the capacitor is an integral part of cies Ha Ib lei terchi ps 3, for Example of a silicon oxide capacitor 10. Here, the Only one lead to the source of the harmonic spectrum Length of less than a millimeter / so that no more disturbing harmonics over the connecting wire 5a and the Terminal lug 4a can get into the environment.

Claims (4)

METZ Apparatewerke Inh. PauL Hetz Patentansprüche: 10 15METZ Apparatewerke Inh. PauL Hetz Patent claims: 10 15 1. In einen Kunststoffkörper (1) eingebetteter integrierter Baustein mit einem auf einer Metallplatte (2) unlösbar verbunden aufliegenden Ha Ib Leiterchiρ (3), mit einseitig aus dem Kunststoffkörper (1) he raus ragenden Metallfahnen C4a,-4b, ..., 4k) und mit Verbindungsdrähten (5a, 5b, ..., 5k), die einerseits auf Anschlußkontakten (6a, 6b, ..., 6k) des Halbleiterchips (3) und andererseits auf den innerhalb des Kunststoffkörpers (1) verlaufenden Teilen der Metallfahnen (4a, 4b, ...,4fc) angeschweißt sind, Aft££=Mff@Wii^^äa^MA4£> dadurch gekennzeichnet, daß dir Ha Ib Lei terchiρ (3) unter Aussparung der Anschlußkoniakte C6a, jb, ..., 6k) mit einer Isolierschicht (8), vorzugsweise einer Si Iiziumoxids chicht, und diese mit einer Metallschicht (7), vorzugsweise einer Aluminiumschicht, überzogen ist, zum Beispiel durch Aufdampfen, und daß ein Verbindungsdraht (9) mit einem Endet an der Metallschicht (7) und mit dem anderen Ende an de ι Metallplatte (2) angeschweißt ist.1. Integrated module embedded in a plastic body (1) with a Ha Ib Leiterchiρ (3) lying undetachably connected to a metal plate (2), with metal lugs C4a, -4b, ..., protruding from the plastic body (1) on one side, 4k) and with connecting wires (5a, 5b, ..., 5k) on the one hand on connection contacts (6a, 6b, ..., 6k) of the semiconductor chip (3) and on the other hand on the parts of the Metal flags (4a, 4b, ..., 4fc) are welded on, Aft ££ = Mff @ Wii ^^ äa ^ MA4 £> characterized by the fact that you Ha Ib Lei terchiρ (3) leaving out the connection cone files C6a, jb,. .., 6k) with an insulating layer (8), preferably a silicon oxide layer, and this is coated with a metal layer (7), preferably an aluminum layer, for example by vapor deposition, and that a connecting wire (9) has one end the metal layer (7) and is welded to the other end of the metal plate (2). 2. Integrierter Baustein nach Anspruch 1, dadurch gekennzeichnet, daß ein Kondensator (10) integraler Bestandteil des HaIbLeiterchips (3) ist, dessen einer Anschlußkontakt mit der Metallplatte (2) und dessen anderer Anschlußkontakt mit dem die Versorgungsspannung führenden Anschlußkontakt (6a) des Halbleiterchips (3) unlösbar verbunden ist.2. Integrated module according to claim 1, characterized in that a capacitor (10) is an integral part of the HalbLeiterchips (3), one of which is a connection contact with the metal plate (2) and its other connection contact with the connection contact carrying the supply voltage (6a) of the semiconductor chip (3) inextricably linked is. 3030th 3. Integrierter Baustein nach Anspruch 2, dadurch gekennzeichnet, daß der Kondensator (10) ein Siliziumoxidkondensator ist.3. Integrated module according to claim 2, characterized in that the capacitor (10) is a silicon oxide capacitor. .. P..83.P3...... P..83.P3 .... iK WETZ Apparatewerke j [·] . ' i K WETZ Apparatewerke j [·] . ' Inh. Paul Metz —.*,.* .I.*.,1 'Owner Paul Metz -. *,. * .I. *., 1 ' · » t I· »T I 4. Integrierter Baustein nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß neben dem HaLb Lei terchiρ (3) ein Miniaturchipkondensator (11) angeordnet ist, dessen an den Stirnseiten angebrachte AnschLußkontakte (12, 13) auf der MetaLLpLatte (2) beziehungsweise auf der die Versorgungsspannung führenden MetaLLfahne (4a) unLösbar verbunden aufLiegen.4. Integrated module according to one of claims 1 to 3, characterized in that next to the Halb Lei terchiρ (3) a miniature chip capacitor (11) is arranged, the connection contacts (12, 13) of which are attached to the end faces on the metal plate (2) or on the die Metal flag (4a) carrying the supply voltage are undetachably connected. . .. p..83.98.. .. p .. 83 .9 8 . • · · I Il t• · · I Il t • · ■ · ι > ι• · ■ · ι> ι ' · < · III tti'· <· III tti
DE8329993U 1983-10-18 Integrated building block Expired DE8329993U1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3337796 1983-10-18

Publications (1)

Publication Number Publication Date
DE8329993U1 true DE8329993U1 (en) 1984-02-23

Family

ID=1332689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8329993U Expired DE8329993U1 (en) 1983-10-18 Integrated building block

Country Status (1)

Country Link
DE (1) DE8329993U1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3424876A1 (en) * 1984-07-06 1986-02-06 Telefunken Fernseh Und Rundfunk Gmbh, 3000 Hannover Integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3424876A1 (en) * 1984-07-06 1986-02-06 Telefunken Fernseh Und Rundfunk Gmbh, 3000 Hannover Integrated circuit

Similar Documents

Publication Publication Date Title
DE69734735T2 (en) Structure for a channel selector and associated cable modem tuner
DE3638748C2 (en)
EP0815454B1 (en) Voltage transformer
DE3101932A1 (en) &#34;MATERIAL COUPLING FOR SIGNAL FREQUENCIES IN THE MEGAHERTZ RANGE&#34;
DE4234451C1 (en) Connector outlet for screened data transmission cables - has screened housing formed from metal die cast upper and lower sections which hold connection clamp carrying circuit board
DE19527027A1 (en) Bidirectional tuner for CATV devices of multi-media outlets, domestic TV and video recorders
DE10064969A1 (en) Device for filtering one or more electrical wires to be connected to a casing from outside fits in a multilayer printed circuit board with carrier layers and conductor layers with a filter side part of a contact pin fastened on it.
DE3326957A1 (en) AMPLIFIER CIRCUIT
DE3337796A1 (en) Integrated device
DE1812942C3 (en) Semiconductor arrangement and circuit arrangement with such a semiconductor arrangement
DE8329993U1 (en) Integrated building block
DE8327377U1 (en) Integrated building block
DE3326958C2 (en) Integrated circuit for amplification
DE2231627C3 (en) Connection for the signal plate of a television pickup tube
DE102018008276A1 (en) antenna
DE1639458B1 (en) Semiconductor device
DE3425176A1 (en) Piezoelectric telephone capsule
DE3404525C1 (en) Connecting box for connecting a coaxial supply line of a broadband cable network to a coaxial domestic connecting line
EP0440605A1 (en) Electronic appliance
DE19939310A1 (en) High voltage ignition module
AT3406U1 (en) CONNECTOR ARRANGEMENT
DE2057726C3 (en) Frequency converter for radiation-tight community antenna systems
DE19939854C2 (en) Current feedthrough filter
DE882428C (en) Shielding arrangement with a detachable joint in the form of a plug connection
DE2828985A1 (en) ARRANGEMENT FOR INTERFERING THE ALTERNATOR OF AN INTERNAL COMBUSTION ENGINE