DE821086C - Dry rectifier - Google Patents

Dry rectifier

Info

Publication number
DE821086C
DE821086C DE1948P0004859 DEP0004859D DE821086C DE 821086 C DE821086 C DE 821086C DE 1948P0004859 DE1948P0004859 DE 1948P0004859 DE P0004859 D DEP0004859 D DE P0004859D DE 821086 C DE821086 C DE 821086C
Authority
DE
Germany
Prior art keywords
layer
dry rectifier
valve
solvent
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1948P0004859
Other languages
German (de)
Inventor
Manfred Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sueddeutsche Apparate Fabrik GmbH
Original Assignee
Sueddeutsche Apparate Fabrik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sueddeutsche Apparate Fabrik GmbH filed Critical Sueddeutsche Apparate Fabrik GmbH
Priority to DE1948P0004859 priority Critical patent/DE821086C/en
Application granted granted Critical
Publication of DE821086C publication Critical patent/DE821086C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Switches (AREA)

Description

Es sind Trockengleichrichter bekannt, bei denen zur Erhöhung .der Sperrspannung auf die Ventilschicht eine aus einem Lack bestehende dünne Zwischenschicht aufgebracht wird, bevor als weitere Elektrode eine dünne Metallschicht aufgespritzt oder sonstwie niedergeschlagen wird. Es ist bekannt, eine solche Zwischenschicht in der Weise zu erstellen, daß Nitrocellulose in einem Lösungsmittel aufgelöst als Lösung in flüssiger Form auf die Ventilschicht aufgebracht wird, so daß nach Verflüchtigung des Lösungsmittels eine Lackschicht zurückbleibt. Je nach der Konzentration der Nitrocellulose im Lösungsmittel und je nach der Stärke der aufgebrachten flüssigen Schicht wird die nach der Entfernung des Lösungsmittels übrigbleibende Lackschicht mehr oder weniger dick.There are dry rectifiers known in which to increase .der Reverse voltage on the valve layer consists of a thin intermediate layer of a lacquer is applied before a thin metal layer is sprayed on as a further electrode or get knocked down in some other way. Such an intermediate layer is known in such a way as to create that nitrocellulose is dissolved in a solvent as Solution in liquid form is applied to the valve layer so that after volatilization the solvent leaves a layer of varnish. Depending on the concentration of Nitrocellulose in the solvent and depending on the strength of the liquid applied The layer becomes the lacquer layer that remains after the solvent has been removed more or less thick.

Es hat sich nun gezeigt, daß .die Wirkung einer solchen isolierenden, dünnen Schicht wesentlich verbessert wird, wenn der Lösung der Nitrocellulose noch Kampfer zugesetzt wird. Nach Entfernung des Lösungsmittels verbleibt in diesem Falle auf der Ventilschicht eine Celluloidschicht. Beim fertigen Ventil ergibt sich mit dieser Schicht eine Erhöhung der Sperrspannung auf Werte bis zu 6o Volt.It has now been shown that the effect of such an insulating, thin layer is much improved if the solution of nitrocellulose is still Camphor is added. In this case, after removal of the solvent remains a celluloid layer on the valve layer. When the valve is finished, this also results in This layer increases the reverse voltage to values of up to 60 volts.

Demgemäß ist bei Ventilen, bei denen auf der Ventilschicht eine aus einer Lösung niedergeschlagene, dünne Isolierschicht angebracht ist, gemäß der Erfindung durch einen Zusatz von Kampfer zu gelöster Nitrocellalose diese Schicht als Celluloidschicht niedergeschlagen.Accordingly, in the case of valves in which one is off on the valve layer a solution deposited, thin insulating layer is applied, according to the invention by adding camphor to dissolved nitrocellalose, this layer becomes a celluloid layer dejected.

Claims (1)

PATENTANSPRUCH: Trockengleichrichter, bei welchen auf der Ventilschicht eine aus einer Lösung durch Entfernung des Lösungsmittels niedergeschlagene, dünne Isolierschicht angebracht ist, dadurch, gekennzeichnet, .daß durch einen Zusatz von Kampfer zu gelöster Nitrocellulose die Zwischenschicht als Celluloidschicht niedergeschlagen ist. ,PATENT CLAIM: Dry rectifier with which on the valve layer a thin, precipitated from a solution by removing the solvent Insulating layer is attached, characterized, .that by an addition from camphor to dissolved nitrocellulose the intermediate layer is a celluloid layer is dejected. ,
DE1948P0004859 1948-10-02 1948-10-02 Dry rectifier Expired DE821086C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1948P0004859 DE821086C (en) 1948-10-02 1948-10-02 Dry rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1948P0004859 DE821086C (en) 1948-10-02 1948-10-02 Dry rectifier

Publications (1)

Publication Number Publication Date
DE821086C true DE821086C (en) 1951-11-15

Family

ID=7359657

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1948P0004859 Expired DE821086C (en) 1948-10-02 1948-10-02 Dry rectifier

Country Status (1)

Country Link
DE (1) DE821086C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE948275C (en) * 1951-08-29 1956-08-30 Int Standard Electric Corp Selenium rectifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE948275C (en) * 1951-08-29 1956-08-30 Int Standard Electric Corp Selenium rectifier

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