DE756746C - Method of manufacturing selenium rectifier plates - Google Patents
Method of manufacturing selenium rectifier platesInfo
- Publication number
- DE756746C DE756746C DEN44239D DEN0044239D DE756746C DE 756746 C DE756746 C DE 756746C DE N44239 D DEN44239 D DE N44239D DE N0044239 D DEN0044239 D DE N0044239D DE 756746 C DE756746 C DE 756746C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- graphite
- metal
- layer
- metal plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 22
- 239000011669 selenium Substances 0.000 title claims description 22
- 229910052711 selenium Inorganic materials 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 31
- 239000010439 graphite Substances 0.000 claims description 28
- 229910002804 graphite Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 230000001464 adherent effect Effects 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating By Spraying Or Casting (AREA)
Description
Es ist bereits bekannt, daß Graphit als Durchlaßelektrode für Selen-Gleichrichterplatten verwendet wird. Die! Herstellung solcher Graphitelektroden bereitet mancherlei Schwierigkeiten. Im wesentlichen kommt es darauf an, ein geeignetes mechanisches Stützmaterial für den Graphit zu finden und leicht und vorteilhaft anzubringen.It is already known that graphite is used as a passage electrode for selenium rectifier plates is used. The! There are a number of things involved in producing such graphite electrodes Trouble. Essentially, it depends on a suitable mechanical support material for the graphite to be found and easy and convenient to apply.
Als Stützmaterial eignen sich alle Metalle, die bereits als sogenannte Trägerelektroden für Selen bekannt sind. Im besonderen kommen die Metalle der Eisengruppe: Aluminium, Magnesium, Zinn, Zink, Kupfer und Kadmium, in Betracht.All metals that are already used as so-called carrier electrodes are suitable as support material are known for selenium. In particular, the metals of the iron group come: aluminum, Magnesium, tin, zinc, copper, and cadmium, into consideration.
Nach bisherigen Verfahren wurden gut haftende Kohleschichten durch Aufbringen des Kohlenstoffes mittels Elektrophorese und anschließendes Einbrennen unter besonderen Vorsichtsmaßnahmen oder durch Einsinternlassen von Kohlepartikelchen in leicht schmelzende Metalle, mit denen die Träger vorher überzogen wurden, erzeugt. Diese Methoden sind kostspielig, umständlich und vermeiden eine Berührung der Selenschicht mit demAccording to previous methods, well-adhering layers of carbon were created by applying of the carbon by means of electrophoresis and subsequent baking under special conditions Take precautions or by sintering carbon particles in easily melting ones Metals with which the carriers were previously coated are generated. These methods are costly, cumbersome, and avoidable a touch of the selenium layer with the
unteren Metall nicht immer, so daß Fehler im Gleichrichter auftreten.lower metal not always, so that errors occur in the rectifier.
Nach der Erfindung wird bei dem Verfahren zur Herstellung von Selen-Gleichrichterplatten mit Graphitschicht zwischen Selen und Trägermetallplatte durch Aufspritzen von Metall auf eine Graphitschicht, z. B. auf die ebene Fläche eines Graphitblockes., eine Metallplatte mit einem dünnen,According to the invention, in the method for producing selenium rectifier plates with a graphite layer between selenium and the carrier metal plate by spraying metal onto a graphite layer, z. B. on the flat surface of a graphite block., A metal plate with a thin,
ίο festhaftenden Graphitüberzug erzeugt und auf der Graphitseite der Metallplatte eine Selenschicht aufgebracht, die in bekannter Weise wämebehandelt und mit der Sperrelektrode versehen wird.ίο firmly adhering graphite coating generated and on the graphite side of the metal plate a layer of selenium is applied in a known manner is heat-treated and provided with the blocking electrode.
Die Herstellung der Graphitdurchlaßelektroden läßt sich nun am besten auf folgende Weise durchführen: Es wird ein Block aus reinstem, entöltem, feinpulverigem Graphit unter einem Druck von 20 bis 60 t gepreßt.The production of the graphite passage electrodes can now best be carried out as follows Perform this way: It will be a block of the purest, de-oiled, fine-powdered graphite pressed under a pressure of 20 to 60 tons.
Dieser Block soll möglichst die Form der späteren Gleichrichterzellen haben und einige Zentimeter stark sein. Auf eine ebene Fläche des Blockes wird dann eines der obengenannten Metalle gespritzt, wobei man sich beispielsweise des sogenannten Schoopschen Spritzverfahrens bedienen kann. Die Dicke der aufzuspritzenden Metallschicht wird dem späteren Zweck entsprechend gewählt. Hierauf hebt man die Metallschicht ab, und es zeigt sich, daß an der dem Graphit aufliegenden Seite nun eine dünne Graphitschicht hängengeblieben ist. Man erhält so ein Gebilde, bestehend aus einer Metallschicht und einer praktisch einschuppigen Graphitschicht, dieThis block should have the shape of the later rectifier cells and some Be inches thick. One of the above is then placed on a flat surface of the block Metals sprayed, for example the so-called Schoop spraying process can be used. The fat the metal layer to be sprayed on is selected according to the later purpose. On that the metal layer is lifted off and it is found that the graphite rests on it A thin layer of graphite has now stuck to the side. You get such a structure consisting of a metal layer and a practically single-scaly graphite layer, the
mit dem Metall fest verbunden ist. Sollte der Fall eintreten, daß die Metallschicht eine zu starke Graphitauflage hat, so kann der überschüssige Graphit durch Bürsten entfernt werden. Das Selen wird dann auf die Graphitschicht gebracht. Schließlich wird das Paket, bestehend aus durch Metall gestütztem Graphit und Selen, in der üblichen und bekannten Weise weiterbehandelt.is firmly connected to the metal. Should the case occur that the metal layer is too has a strong graphite layer, the excess graphite can be removed by brushing. The selenium is then applied to the graphite layer. Finally the package, composed of metal supported graphite and selenium, in the usual and well known Way treated further.
Gelegentlich nehmen manche Metalle GaseOccasionally some metals take gases
oder Wasser auf, die aus den Flammengasen bei Anwendung des Spritzverfahrens stammen. Diese Gase wirken sich beim Wärmeprozeß schädlich aus. Sie können aber leicht beseitigt werden, indem man das System Graphit-Metall bei etwa 150 bis 2000 einem Vakuum aussetzt. Man kann aber auch so vorgehen, daß man auf den Graphit zunächst eine ganz dünne Metallhaut bringt und sie erst nach der Vereinigung des Graphits mit dem Selen und/oder nach dem Kristallisationsprozeß des Selens verstärkt. In diesem Fall ist es vorteilhaft, daß man dem Paket während des Aufspritzens einen mechanischen Halt dadurch gibt, daß man den polierten Metallteil, der das Selen beim Aufpressen auf die Graphitdurchlaßelektrode abdeckte, am Paket beläßt.or water that comes from the flame gases when using the spraying process. These gases have a harmful effect on the heating process. However, they can easily be eliminated by exposing the graphite-metal system to a vacuum at around 150 to 200 0. However, one can also proceed in such a way that a very thin metal skin is first placed on the graphite and it is only reinforced after the graphite has combined with the selenium and / or after the selenium has crystallized. In this case it is advantageous to give the package a mechanical hold during the spraying on by leaving the polished metal part, which covered the selenium when it was pressed onto the graphite passage electrode, on the package.
Beim Verstärken der durch Metall gestützten Graphitelektrode durch Bespritzen mit weiterem Metall ist es günstig, den Spritzpistolenabstand und die Spritztemperatur so zu wählen, daß bereits eine Umwandlung des amorphen in kristallines Selen vor sich geht. Das Paket, bestehend aus Stützmaterial, Graphit und Selen, ist dann nur noch zur Erzielung einer hohen Leitfähigkeit thermisch weiterzubehandeln. Anschließend wird die Sperrelektrode in der bekannten Weise angebracht und das Ganze einer elektrischen Formierung unterzogen.When reinforcing the metal-supported graphite electrode by spraying with more metal, it is beneficial to keep the distance between the spray guns and the spray temperature in this way to choose that a conversion of the amorphous to crystalline selenium is already going on. The package, consisting of support material, graphite and selenium, is then only used to achieve this thermally treated with a high conductivity. The blocking electrode is then attached in the known manner and subjected the whole to an electrical formation.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN44239D DE756746C (en) | 1940-10-11 | 1940-10-12 | Method of manufacturing selenium rectifier plates |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN0044239 | 1940-10-11 | ||
| DEN44239D DE756746C (en) | 1940-10-11 | 1940-10-12 | Method of manufacturing selenium rectifier plates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE756746C true DE756746C (en) | 1953-11-02 |
Family
ID=25989235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN44239D Expired DE756746C (en) | 1940-10-11 | 1940-10-12 | Method of manufacturing selenium rectifier plates |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE756746C (en) |
-
1940
- 1940-10-12 DE DEN44239D patent/DE756746C/en not_active Expired
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