DE753029C - Process for the production of fissile, large-area crystals of synthetic mica - Google Patents

Process for the production of fissile, large-area crystals of synthetic mica

Info

Publication number
DE753029C
DE753029C DES139578D DES0139578D DE753029C DE 753029 C DE753029 C DE 753029C DE S139578 D DES139578 D DE S139578D DE S0139578 D DES0139578 D DE S0139578D DE 753029 C DE753029 C DE 753029C
Authority
DE
Germany
Prior art keywords
production
synthetic mica
fissile
crystals
melt flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES139578D
Other languages
German (de)
Inventor
Reinhold Reichmann
Carl Dr Phil Stuckardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES139578D priority Critical patent/DE753029C/en
Application granted granted Critical
Publication of DE753029C publication Critical patent/DE753029C/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C01B33/36—Silicates having base-exchange properties but not having molecular sieve properties
    • C01B33/38—Layered base-exchange silicates, e.g. clays, micas or alkali metal silicates of kenyaite or magadiite type
    • C01B33/42—Micas ; Interstratified clay-mica products

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

Verfahren zur Herstellung von spaltbaren großflächigen Kristallen von synthetischem Glimmer Es ist bereits bekannt, synthetischen Glimmer aus einem fluoridhaltigen Schmelzfluß von Kieselsäure oder . Silicaten und Verbindungen ein-, zwei- und dreiwertiger Metalle herzustellen. Insbesondere hat man hierbei das Silicium in Form von Natriumcalciumsilicat zugesetzt. Obwohl hierbei das Molverhältnis von Calcium und Magnesium zum Aluminium 3,7: r betrug, war es nicht möglich, entsprechend großflächige und leicht spaltbare Kristalle herzustellen. Dies lag vor allem daran, daß es bisher nicht gelungen ist, eine Ausrichtung des Kristallisationsvorganges zu erzielen.Process for the production of fissile, large-area crystals of synthetic mica It is already known to make synthetic mica from a fluoride-containing melt flow of silica or. Silicates and compounds to produce bivalent and trivalent metals. In particular, one has silicon here added in the form of sodium calcium silicate. Although here the molar ratio of Calcium and magnesium to aluminum were 3.7: r, it was not possible to do so accordingly to produce large and easily split crystals. This was mainly because that it has not yet been possible to align the crystallization process to achieve.

Durch die vorliegende Erfindung werden diese Nachteile dadurch beseitigt und wird in einfachster Weise die Herstellung von leicht spaltbaren, großflächigen Kristallen von synthetischem Glimmer dadurch erzielt, daß der Tiegel mit dem Schmelzfluß durch eine Absenkvorrichtung allmählich in Zonen niederer Temperatur gebracht wird. Durch das Absenken wird die Bildung gleichgerichteter Kristalle exmöglicht, die gegenüber den bekannten Kristallen größer und leicht spaltbar sind. Durch das Absenken des Tiegels wird die Schmelze gezwungen, am Boden des Tiegels mit der Kristallisation zu beginnen, so daß die Kristalle ohne wesentliche Störungen durch Einflüsse von oben oder von den Seiten in einer Richtung, und zwar in der vertikalen, wachsen. Es gelingt somit, eine Ausrichtung des Kristallisationsvorganges zu erzwingen, wodurch die Größe der Kristalle und ihre Spaltbarkeit in vorteilhafter Weise beeinflußt werden. Das Temperaturgefälle bzw. das Maß der Absenkung des Tiegels kann durch entsprechende Vorversuche je nach der Größe des Tiegelversatzes ohne weiteres festgestellt werden. Auch im vorliegenden Falle ist es im übrigen, entsprechend einem eigenen, nicht vorveröffentlichten Vorschlag, wesentlich, daß ein Schmelzfluß verwendet wird, in dem die zwei- und dreiwertigen :Metalle in einem Molverhältnis von etwa .f : i stehen. Der Schmelzfluß kann beispielsweise von Kieselsäure, Kaliumsilicofluorid und Magnesium-Aluminiumoxyd gebildet sein. Folgende Zusammensetzungen haben sich als gut geeignet gezeigt: SiO, ................. 3o bis 35 0/ 0 Mg o ................. 3o bis 35 0/0 A1203 ................ io bis 12 0/0 K2 Si E6 ............... 2o bis 25 0/ . 0The present invention eliminates these disadvantages and the production of easily cleavable, large-area crystals of synthetic mica is achieved in the simplest manner by gradually bringing the crucible with the melt flow through a lowering device into zones of low temperature. The lowering enables the formation of crystals in the same direction, which are larger and easily split compared to the known crystals. By lowering the crucible, the melt is forced to start crystallizing at the bottom of the crucible, so that the crystals grow in one direction, namely in the vertical, without significant interference from influences from above or from the sides. It is thus possible to force an alignment of the crystallization process, whereby the size of the crystals and their cleavage are influenced in an advantageous manner. The temperature gradient or the extent of the lowering of the crucible can easily be determined by appropriate preliminary tests depending on the size of the crucible offset. In the present case, too, according to a separate, not previously published proposal, it is essential that a melt flow is used in which the bivalent and trivalent metals are in a molar ratio of about .f: i. The melt flow can be formed, for example, from silica, potassium silicofluoride and magnesium-aluminum oxide. The following compositions have proven to be well suited: SiO, ................. 3o to 35 0/0 Mg o .............. ... 3o to 35 0/0 A1203 ................ ok to 12 0/0 K2 Si E6 ............... 2o to 25 0 /. 0

Claims (1)

PATENTANSPRUCH: Verfahren zur Herstellung von spaltbaren großflächigen Kristallen von synthetischem Glimmer aus einem fluorhaltigen Schmelzfluß von Kieselsäure oder Silicaten und Verbindungen einwertiger, zweiwertiger und dreiwertiger Metalle, in dem die zwei- und dreiwertigen Metalle in einem Molverhältnis von etwa q.: i stehen, vorzugsweise aus einem Schmelzfluß von Kieselsäure, Kaliumsilicofluorid und Magnesium- und Aluminiumoxyd, dadurch gekennzeichnet, daß der Tiegel mit dem Schmelzfluß durch eine Absenkvorrichtung allmählich in Zonen niederer Temperatur gebracht wird. Claim: Process for the production of fissile large-area crystals of synthetic mica from a fluorine-containing melt flow of silica or silicates and compounds of monovalent, divalent and trivalent metals, in which the divalent and trivalent metals are in a molar ratio of about q .: i, preferably from a melt flow of silica, potassium silicofluoride and magnesium and aluminum oxide, characterized in that the crucible with the melt flow is gradually brought into zones of low temperature by a lowering device.
DES139578D 1939-12-16 1939-12-16 Process for the production of fissile, large-area crystals of synthetic mica Expired DE753029C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES139578D DE753029C (en) 1939-12-16 1939-12-16 Process for the production of fissile, large-area crystals of synthetic mica

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES139578D DE753029C (en) 1939-12-16 1939-12-16 Process for the production of fissile, large-area crystals of synthetic mica

Publications (1)

Publication Number Publication Date
DE753029C true DE753029C (en) 1954-03-08

Family

ID=7541133

Family Applications (1)

Application Number Title Priority Date Filing Date
DES139578D Expired DE753029C (en) 1939-12-16 1939-12-16 Process for the production of fissile, large-area crystals of synthetic mica

Country Status (1)

Country Link
DE (1) DE753029C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1088940B (en) * 1957-10-25 1960-09-15 Nobutoshi Daimon Process for the production of synthetic mica crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1088940B (en) * 1957-10-25 1960-09-15 Nobutoshi Daimon Process for the production of synthetic mica crystals

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