DE69838308D1 - Langwelliger VCSEL - Google Patents

Langwelliger VCSEL

Info

Publication number
DE69838308D1
DE69838308D1 DE69838308T DE69838308T DE69838308D1 DE 69838308 D1 DE69838308 D1 DE 69838308D1 DE 69838308 T DE69838308 T DE 69838308T DE 69838308 T DE69838308 T DE 69838308T DE 69838308 D1 DE69838308 D1 DE 69838308D1
Authority
DE
Germany
Prior art keywords
longwave
vcsel
longwave vcsel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69838308T
Other languages
English (en)
Other versions
DE69838308T2 (de
Inventor
Jamal Ramdani
Michael S Lebby
Wenbin Jiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Application granted granted Critical
Publication of DE69838308D1 publication Critical patent/DE69838308D1/de
Publication of DE69838308T2 publication Critical patent/DE69838308T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32383—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect small amount of Thallum (TI), e.g. GaTIP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69838308T 1997-02-25 1998-02-18 Langwelliger VCSEL Expired - Lifetime DE69838308T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/806,269 US5815524A (en) 1997-02-25 1997-02-25 VCSEL including GaTlP active region
US806269 1997-02-25

Publications (2)

Publication Number Publication Date
DE69838308D1 true DE69838308D1 (de) 2007-10-11
DE69838308T2 DE69838308T2 (de) 2008-05-21

Family

ID=25193690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69838308T Expired - Lifetime DE69838308T2 (de) 1997-02-25 1998-02-18 Langwelliger VCSEL

Country Status (5)

Country Link
US (1) US5815524A (de)
EP (1) EP0860916B1 (de)
JP (1) JPH10256655A (de)
DE (1) DE69838308T2 (de)
TW (1) TW381362B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3449516B2 (ja) * 1996-08-30 2003-09-22 株式会社リコー 半導体多層膜反射鏡および半導体多層膜反射防止膜および面発光型半導体レーザおよび受光素子
EP1099102B1 (de) 1998-06-19 2008-05-07 California Institute Of Technology Spurendetektion von analyten mit hilfe artifizieller olfaktometrie
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6614821B1 (en) 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6621842B1 (en) 1999-10-15 2003-09-16 E20 Communications, Inc. Method and apparatus for long wavelength semiconductor lasers
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror

Also Published As

Publication number Publication date
TW381362B (en) 2000-02-01
EP0860916A3 (de) 2000-07-05
EP0860916B1 (de) 2007-08-29
JPH10256655A (ja) 1998-09-25
US5815524A (en) 1998-09-29
DE69838308T2 (de) 2008-05-21
EP0860916A2 (de) 1998-08-26

Similar Documents

Publication Publication Date Title
DK0973746T3 (da) Substituerede 3-cyanoquinoliner
ATA93198A (de) Fluoxetinpellets
ID24529A (id) Turunan-turunan 9-oksima eritromisin
DE69838308D1 (de) Langwelliger VCSEL
DE59813487D1 (de) Substituierte 4-benzoyl-pyrazole
ATA111897A (de) Kimme
ATE236897T1 (de) 3-benzylpiperidine
ATA112597A (de) Snowboard - bindung
DK0960100T3 (da) Substituerede 4-benzoyl-pyrazoler
PT1015447E (pt) Derivado piperidinilmetiloxazolidinona
ID24079A (id) Aminoheteroksiklilamida tersubstitusi
DE59807877D1 (de) Substituierte 4-benzoyl-pyrazole
FI972138A0 (fi) Returtraog i bestrykningsanordning
ATA86797A (de) Verschleissschuh
DE59810960D1 (de) Substituierte phenyluracile
ATA46498A (de) Kunststoffgleitbahn
FI3092U1 (fi) Lompakko matkapuhelinkotelo
DE59811399D1 (de) Substituierte phenyluracile
BR9701099A (pt) Acertrol i
FI974354A0 (fi) Kvaevereducering i avloppsvatten
FI974373A0 (fi) Avgasutlopp i utombordsmotorer
FI974635A0 (fi) I vaermebatteri integrerbar ventilkonstruktion
FI972997A0 (fi) Anordning i en sugsamlarvagn
FI972891A0 (fi) I en vaeggkonstruktion infaellbart faerdigt elkanalnaet
FI972640A0 (fi) Gapformare i en pappersmaskin/kartongmaskin

Legal Events

Date Code Title Description
8364 No opposition during term of opposition