DE69829502D1 - Ionenbeschussteter graphit-beschichteter draht-elektronenemitter - Google Patents

Ionenbeschussteter graphit-beschichteter draht-elektronenemitter

Info

Publication number
DE69829502D1
DE69829502D1 DE69829502T DE69829502T DE69829502D1 DE 69829502 D1 DE69829502 D1 DE 69829502D1 DE 69829502 T DE69829502 T DE 69829502T DE 69829502 T DE69829502 T DE 69829502T DE 69829502 D1 DE69829502 D1 DE 69829502D1
Authority
DE
Germany
Prior art keywords
mixer
ion
coated wire
shaped graphite
wire electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69829502T
Other languages
English (en)
Other versions
DE69829502T2 (de
Inventor
Irwin Amey
Joseph Bouchard
Ismat Shah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of DE69829502D1 publication Critical patent/DE69829502D1/de
Application granted granted Critical
Publication of DE69829502T2 publication Critical patent/DE69829502T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y10S977/727—Devices having flexible or movable element formed from biological material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y10S977/951—Laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69829502T 1997-12-15 1998-12-08 Ionenbeschussteter graphit-beschichteter draht-elektronenemitter Expired - Fee Related DE69829502T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6945297P 1997-12-15 1997-12-15
US69452P 1997-12-15
PCT/US1998/026017 WO1999031701A1 (en) 1997-12-15 1998-12-08 Coated-wire ion bombarded graphite electron emitters

Publications (2)

Publication Number Publication Date
DE69829502D1 true DE69829502D1 (de) 2005-04-28
DE69829502T2 DE69829502T2 (de) 2006-02-09

Family

ID=22089060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69829502T Expired - Fee Related DE69829502T2 (de) 1997-12-15 1998-12-08 Ionenbeschussteter graphit-beschichteter draht-elektronenemitter

Country Status (8)

Country Link
US (1) US6514112B1 (de)
EP (1) EP1040502B1 (de)
JP (1) JP2002509339A (de)
KR (1) KR100550486B1 (de)
CN (1) CN1281587A (de)
DE (1) DE69829502T2 (de)
TW (1) TW423013B (de)
WO (1) WO1999031701A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE515377E (sv) 1999-07-30 2005-01-11 Nanolight Internat Ltd Ljuskälla innefattande en fältemissionskatod
JP4827515B2 (ja) * 2005-12-15 2011-11-30 株式会社ライフ技術研究所 電界放射型ランプ用陰極の製造方法
JP2010015966A (ja) * 2008-06-06 2010-01-21 Hitachi High-Technologies Corp 電子放出素子，電子銃、それを用いた電子顕微鏡装置及び電子線描画装置
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1394055A (en) * 1971-07-09 1975-05-14 Nat Res Dev Electron emitters
US4857799A (en) 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
US5089742A (en) * 1990-09-28 1992-02-18 The United States Of America As Represented By The Secretary Of The Navy Electron beam source formed with biologically derived tubule materials
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5686791A (en) * 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
KR100284830B1 (ko) 1992-12-23 2001-04-02 씨.알. 클라인 쥬니어 평면의 필드 방사 음극을 사용하는 3극 진공관 구조 평판 디스플레이
AU5897594A (en) 1993-06-02 1994-12-20 Microelectronics And Computer Technology Corporation Amorphic diamond film flat field emission cathode
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
EP0700065B1 (de) * 1994-08-31 2001-09-19 AT&T Corp. Feldemissionsvorrichtung und Verfahren zur Herstellung
GB2306246B (en) * 1995-08-04 1997-09-03 Richard Allan Tuck Field electron emission devices
CN1199500A (zh) 1995-08-14 1998-11-18 纳幕尔杜邦公司 利用纤维场致发射器的显示面板
WO1997018576A1 (en) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Diamond powder field emitters and field emitter cathodes made therefrom
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
DE69816604T2 (de) * 1997-04-02 2004-06-09 E.I. Du Pont De Nemours And Co., Wilmington Metall-kohlenstoff-sauerstoff-feldemissionsanordnungen
EP1361592B1 (de) * 1997-09-30 2006-05-24 Noritake Co., Ltd. Verfahren zur Herstellung einer Elektronenemittierenden Quelle

Also Published As

Publication number Publication date
WO1999031701A1 (en) 1999-06-24
TW423013B (en) 2001-02-21
US6514112B1 (en) 2003-02-04
KR100550486B1 (ko) 2006-02-09
EP1040502A1 (de) 2000-10-04
JP2002509339A (ja) 2002-03-26
DE69829502T2 (de) 2006-02-09
EP1040502B1 (de) 2005-03-23
KR20010033107A (ko) 2001-04-25
CN1281587A (zh) 2001-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee