DE69804614D1 - Scheibenanordnung für gasinjektion bei cvd anwendungen - Google Patents

Scheibenanordnung für gasinjektion bei cvd anwendungen

Info

Publication number
DE69804614D1
DE69804614D1 DE69804614T DE69804614T DE69804614D1 DE 69804614 D1 DE69804614 D1 DE 69804614D1 DE 69804614 T DE69804614 T DE 69804614T DE 69804614 T DE69804614 T DE 69804614T DE 69804614 D1 DE69804614 D1 DE 69804614D1
Authority
DE
Germany
Prior art keywords
gas injection
disc arrangement
cvd applications
cvd
applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69804614T
Other languages
English (en)
Other versions
DE69804614T2 (de
Inventor
George Quirk
V Raney
Scott Heuser
B Shepard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Norton Industrial Ceramics Corp
Saint Gobain Industrial Ceramics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Norton Industrial Ceramics Corp, Saint Gobain Industrial Ceramics Inc filed Critical Saint Gobain Norton Industrial Ceramics Corp
Publication of DE69804614D1 publication Critical patent/DE69804614D1/de
Application granted granted Critical
Publication of DE69804614T2 publication Critical patent/DE69804614T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
DE69804614T 1997-06-26 1998-06-22 Scheibenanordnung für gasinjektion bei cvd anwendungen Expired - Fee Related DE69804614T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/883,020 US5846330A (en) 1997-06-26 1997-06-26 Gas injection disc assembly for CVD applications
PCT/US1998/013037 WO1999000533A1 (en) 1997-06-26 1998-06-22 Gas injection disc assembly for cvd applications

Publications (2)

Publication Number Publication Date
DE69804614D1 true DE69804614D1 (de) 2002-05-08
DE69804614T2 DE69804614T2 (de) 2002-11-21

Family

ID=25381825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69804614T Expired - Fee Related DE69804614T2 (de) 1997-06-26 1998-06-22 Scheibenanordnung für gasinjektion bei cvd anwendungen

Country Status (6)

Country Link
US (1) US5846330A (de)
EP (1) EP0991792B1 (de)
JP (1) JP2002508808A (de)
CA (1) CA2295180C (de)
DE (1) DE69804614T2 (de)
WO (1) WO1999000533A1 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110544A (en) 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6666920B1 (en) 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
US6716289B1 (en) 2000-08-09 2004-04-06 Itt Manufacturing Enterprises, Inc. Rigid gas collector for providing an even flow of gasses
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
US6797108B2 (en) * 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7264849B2 (en) * 2003-07-11 2007-09-04 Optisolar, Inc. Roll-vortex plasma chemical vapor deposition method
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7282244B2 (en) * 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7595097B2 (en) * 2004-03-09 2009-09-29 Exatec, L.L.C. Expanding thermal plasma deposition system
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
DE102004029466A1 (de) * 2004-06-18 2006-01-05 Leybold Optics Gmbh Medieninjektor
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US7562638B2 (en) * 2005-12-23 2009-07-21 Lam Research Corporation Methods and arrangement for implementing highly efficient plasma traps
US7679024B2 (en) * 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US7554053B2 (en) * 2005-12-23 2009-06-30 Lam Research Corporation Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20090120364A1 (en) * 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
TWI385042B (zh) * 2009-06-26 2013-02-11 Iner Aec Executive Yuan 多氣式混合器與電漿火炬的混合氣供氣裝置
SG10201501824XA (en) * 2010-03-12 2015-05-28 Applied Materials Inc Atomic layer deposition chamber with multi inject
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
EP2844430B1 (de) * 2012-04-30 2020-08-12 Eigen Systems Limited Luftstrahlvorrichtung für einen spannfuss
CN107424901B (zh) 2013-03-12 2019-06-11 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
KR102156795B1 (ko) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US10113232B2 (en) 2014-07-31 2018-10-30 Lam Research Corporation Azimuthal mixer
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
KR102610827B1 (ko) * 2018-12-20 2023-12-07 어플라이드 머티어리얼스, 인코포레이티드 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
US20220122819A1 (en) * 2020-10-15 2022-04-21 Applied Materials, Inc. Semiconductor chamber components for back diffusion control
CN115613009A (zh) * 2022-11-03 2023-01-17 江苏微导纳米科技股份有限公司 原子层沉积设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914573A (en) * 1971-05-17 1975-10-21 Geotel Inc Coating heat softened particles by projection in a plasma stream of Mach 1 to Mach 3 velocity
US4019091A (en) * 1974-05-30 1977-04-19 U.S. Philips Corporation Gas discharge electron gun for generating an electron beam by means of a glow discharge
JPS61143579A (ja) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp プラズマイオン供給方法
US4728863A (en) * 1985-12-04 1988-03-01 Wertheimer Michael R Apparatus and method for plasma treatment of substrates
GB8713986D0 (en) * 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
US5144110A (en) * 1988-11-04 1992-09-01 Marantz Daniel Richard Plasma spray gun and method of use
US4990739A (en) * 1989-07-07 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Plasma gun with coaxial powder feed and adjustable cathode
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5188671A (en) * 1990-08-08 1993-02-23 Hughes Aircraft Company Multichannel plate assembly for gas source molecular beam epitaxy
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
US5342660A (en) * 1991-05-10 1994-08-30 Celestech, Inc. Method for plasma jet deposition
JPH0558782A (ja) * 1991-08-27 1993-03-09 Hitachi Koki Co Ltd ダイヤモンドの気相合成装置及び合成方法
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US5746834A (en) * 1996-01-04 1998-05-05 Memc Electronics Materials, Inc. Method and apparatus for purging barrel reactors

Also Published As

Publication number Publication date
US5846330A (en) 1998-12-08
EP0991792B1 (de) 2002-04-03
EP0991792A1 (de) 2000-04-12
WO1999000533A1 (en) 1999-01-07
DE69804614T2 (de) 2002-11-21
CA2295180C (en) 2003-11-04
JP2002508808A (ja) 2002-03-19
CA2295180A1 (en) 1999-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee