DE69712387D1 - Abgasanlage in einem Ionenimplantierungssystem - Google Patents

Abgasanlage in einem Ionenimplantierungssystem

Info

Publication number
DE69712387D1
DE69712387D1 DE69712387T DE69712387T DE69712387D1 DE 69712387 D1 DE69712387 D1 DE 69712387D1 DE 69712387 T DE69712387 T DE 69712387T DE 69712387 T DE69712387 T DE 69712387T DE 69712387 D1 DE69712387 D1 DE 69712387D1
Authority
DE
Germany
Prior art keywords
ion implantation
exhaust
exhaust system
implantation system
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69712387T
Other languages
English (en)
Other versions
DE69712387T2 (de
Inventor
Akira Fukunaga
Tetsuo Komai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69712387D1 publication Critical patent/DE69712387D1/de
Publication of DE69712387T2 publication Critical patent/DE69712387T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
DE69712387T 1996-02-09 1997-02-10 Abgasanlage in einem Ionenimplantierungssystem Expired - Fee Related DE69712387T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8048235A JPH09219172A (ja) 1996-02-09 1996-02-09 イオン注入装置の排気装置

Publications (2)

Publication Number Publication Date
DE69712387D1 true DE69712387D1 (de) 2002-06-13
DE69712387T2 DE69712387T2 (de) 2003-01-02

Family

ID=12797791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69712387T Expired - Fee Related DE69712387T2 (de) 1996-02-09 1997-02-10 Abgasanlage in einem Ionenimplantierungssystem

Country Status (5)

Country Link
US (1) US5894131A (de)
EP (1) EP0791665B1 (de)
JP (1) JPH09219172A (de)
KR (1) KR970063475A (de)
DE (1) DE69712387T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180954B1 (en) * 1997-05-22 2001-01-30 Eaton Corporation Dual-walled exhaust tubing for vacuum pump
US6090222A (en) 1998-11-16 2000-07-18 Seh-America, Inc. High pressure gas cleaning purge of a dry process vacuum pump
US8450701B2 (en) * 2011-04-19 2013-05-28 Axcelis Technologies, Inc. Vacuum system cold trap filter
JP6616611B2 (ja) * 2015-07-23 2019-12-04 エドワーズ株式会社 排気システム
CN109314025B (zh) * 2017-04-06 2020-05-15 株式会社爱发科 离子源以及离子注入装置
WO2019116082A1 (en) * 2017-12-14 2019-06-20 Arcelormittal Vacuum deposition facility and method for coating a substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059293A (en) * 1975-12-01 1977-11-22 Sipler Clarence L Connector
JPS55154558A (en) * 1979-05-22 1980-12-02 Toshiba Corp Ion-implanting apparatus
US4835114A (en) * 1986-02-19 1989-05-30 Hitachi, Ltd. Method for LPCVD of semiconductors using oil free vacuum pumps
JP2717170B2 (ja) * 1988-12-27 1998-02-18 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
US5314541A (en) * 1991-05-28 1994-05-24 Tokyo Electron Limited Reduced pressure processing system and reduced pressure processing method
JPH05202474A (ja) * 1992-01-24 1993-08-10 Hitachi Electron Eng Co Ltd Ｃｖｄ装置の排気ガスの異物捕獲方法

Also Published As

Publication number Publication date
EP0791665A1 (de) 1997-08-27
KR970063475A (ko) 1997-09-12
DE69712387T2 (de) 2003-01-02
JPH09219172A (ja) 1997-08-19
EP0791665B1 (de) 2002-05-08
US5894131A (en) 1999-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee