DE69631666D1 - Mikrostruktur mit opto-elektronischem gate - Google Patents

Mikrostruktur mit opto-elektronischem gate

Info

Publication number
DE69631666D1
DE69631666D1 DE69631666T DE69631666T DE69631666D1 DE 69631666 D1 DE69631666 D1 DE 69631666D1 DE 69631666 T DE69631666 T DE 69631666T DE 69631666 T DE69631666 T DE 69631666T DE 69631666 D1 DE69631666 D1 DE 69631666D1
Authority
DE
Germany
Prior art keywords
microstructure
electronic gate
opto electronic
opto
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69631666T
Other languages
English (en)
Other versions
DE69631666T2 (de
Inventor
Francis Hassard
Roland Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deltadot Ltd
Original Assignee
Deltadot Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deltadot Ltd filed Critical Deltadot Ltd
Publication of DE69631666D1 publication Critical patent/DE69631666D1/de
Application granted granted Critical
Publication of DE69631666T2 publication Critical patent/DE69631666T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE69631666T 1995-09-01 1996-08-30 Mikrostruktur mit opto-elektronischem gate Expired - Fee Related DE69631666T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9517927.1A GB9517927D0 (en) 1995-09-01 1995-09-01 Optoelectrically gated microstructure
GB9517927 1995-09-01
PCT/GB1996/002100 WO1997009744A1 (en) 1995-09-01 1996-08-30 Optoelectronically gated microstructure

Publications (2)

Publication Number Publication Date
DE69631666D1 true DE69631666D1 (de) 2004-04-01
DE69631666T2 DE69631666T2 (de) 2004-12-23

Family

ID=10780100

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69631666T Expired - Fee Related DE69631666T2 (de) 1995-09-01 1996-08-30 Mikrostruktur mit opto-elektronischem gate

Country Status (5)

Country Link
US (1) US6011296A (de)
EP (1) EP0847600B1 (de)
DE (1) DE69631666T2 (de)
GB (1) GB9517927D0 (de)
WO (1) WO1997009744A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111082792A (zh) * 2019-12-29 2020-04-28 中国工程物理研究院流体物理研究所 一种光控半导体开关

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9805301D0 (en) * 1998-03-12 1998-05-06 Imperial College Detector
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
US7529435B2 (en) * 2003-05-29 2009-05-05 Applied Materials, Inc. Serial routing of optical signals
JP2007525012A (ja) * 2003-06-27 2007-08-30 アプライド　マテリアルズ　インコーポレイテッド 低ジッタのパルス型量子ドットレーザシステム
US20050016446A1 (en) 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (en) 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
JP2009518833A (ja) * 2005-12-07 2009-05-07 インノルメ ゲゼルシャフト ミット ベシュレンクテル ハフツング 広帯域スペクトル発光を有するレーザ光源
US7835408B2 (en) 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
EP2371044B1 (de) * 2008-12-03 2019-08-28 Innolume GmbH Halbleiterlaser mit geringem relativem intensitätsrauschen individueller longitudinalmoden und den laser umfassendes optisches übertragungssystem
US8888879B1 (en) 2010-10-20 2014-11-18 Us Synthetic Corporation Detection of one or more interstitial constituents in a polycrystalline diamond element by neutron radiographic imaging
US20220334231A1 (en) * 2021-04-20 2022-10-20 Luminar, Llc Coherent pulsed lidar system with two-sided detector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360246A (en) * 1980-05-23 1982-11-23 Hughes Aircraft Company Integrated waveguide and FET detector
US4899200A (en) * 1988-06-03 1990-02-06 Regents Of The University Of Minnesota Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
JP2813023B2 (ja) * 1990-03-13 1998-10-22 株式会社神戸製鋼所 Ｍｉｓ型ダイヤモンド電界効果トランジスタ
US5345075A (en) * 1990-11-13 1994-09-06 Sumitomo Electric Industries, Ltd. Semiconductor photodetector with dielectric shielding
US5233556A (en) * 1991-01-31 1993-08-03 Matsushita Electric Industrial Co., Ltd. Optoelectronic memory and logic device
DE4120443B4 (de) * 1991-05-07 2007-03-22 Kemmer, Josef, Dr. Halbleiterdetektor
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
FI934784A0 (fi) * 1993-10-28 1993-10-28 Rados Technology Oy Straolningsdetektor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111082792A (zh) * 2019-12-29 2020-04-28 中国工程物理研究院流体物理研究所 一种光控半导体开关
CN111082792B (zh) * 2019-12-29 2024-06-11 中国工程物理研究院流体物理研究所 一种光控半导体开关

Also Published As

Publication number Publication date
EP0847600B1 (de) 2004-02-25
EP0847600A1 (de) 1998-06-17
WO1997009744A1 (en) 1997-03-13
US6011296A (en) 2000-01-04
DE69631666T2 (de) 2004-12-23
GB9517927D0 (en) 1995-11-01

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee