DE69618129D1 - Multi-state memory device capable of storing a variable resolution - Google Patents

Multi-state memory device capable of storing a variable resolution

Info

Publication number
DE69618129D1
DE69618129D1 DE69618129T DE69618129T DE69618129D1 DE 69618129 D1 DE69618129 D1 DE 69618129D1 DE 69618129 T DE69618129 T DE 69618129T DE 69618129 T DE69618129 T DE 69618129T DE 69618129 D1 DE69618129 D1 DE 69618129D1
Authority
DE
Germany
Prior art keywords
storing
memory device
device capable
state memory
variable resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69618129T
Other languages
German (de)
Other versions
DE69618129T2 (en
Inventor
Takashi Uchino
Nozomu Nambu
Akio Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25144895A external-priority patent/JPH0991973A/en
Priority claimed from JP25144795A external-priority patent/JPH0991972A/en
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE69618129D1 publication Critical patent/DE69618129D1/en
Publication of DE69618129T2 publication Critical patent/DE69618129T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
DE69618129T 1995-09-28 1996-09-27 Multi-state memory device capable of storing a variable resolution Expired - Fee Related DE69618129T2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25144895A JPH0991973A (en) 1995-09-28 1995-09-28 Nonvolatile multilevel memory
JP25144795A JPH0991972A (en) 1995-09-28 1995-09-28 Nonvolatile multilevel memory

Publications (2)

Publication Number Publication Date
DE69618129D1 true DE69618129D1 (en) 2002-01-31
DE69618129T2 DE69618129T2 (en) 2002-06-13

Family

ID=26540199

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69618129T Expired - Fee Related DE69618129T2 (en) 1995-09-28 1996-09-27 Multi-state memory device capable of storing a variable resolution

Country Status (4)

Country Link
US (1) US5768187A (en)
EP (1) EP0766254B1 (en)
KR (1) KR100239870B1 (en)
DE (1) DE69618129T2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JPH11224491A (en) * 1997-12-03 1999-08-17 Sony Corp Non-volatile semiconductor memory and ic memory card using it
KR100339023B1 (en) * 1998-03-28 2002-09-18 주식회사 하이닉스반도체 Sensing circuit for threshold voltage regulatable flash memory device
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
DE69820032D1 (en) * 1998-05-27 2004-01-08 St Microelectronics Srl Non-volatile memory with large capacity
JP4090570B2 (en) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ Semiconductor device, data processing system, and nonvolatile memory cell threshold value changing method
EP1193715A1 (en) * 2000-09-20 2002-04-03 STMicroelectronics S.r.l. Nonvolatile memory device, having parts with different access time, reliability and capacity
US6807106B2 (en) 2001-12-14 2004-10-19 Sandisk Corporation Hybrid density memory card
US7336531B2 (en) 2004-06-25 2008-02-26 Micron Technology, Inc. Multiple level cell memory device with single bit per cell, re-mappable memory block
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7460398B1 (en) * 2007-06-19 2008-12-02 Micron Technology, Inc. Programming a memory with varying bits per cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294202A3 (en) * 1987-06-03 1989-10-18 Kabushiki Kaisha Toshiba Digital sound data storing device
US4890259A (en) * 1988-07-13 1989-12-26 Information Storage Devices High density integrated circuit analog signal recording and playback system
JPH0279300A (en) * 1988-09-16 1990-03-19 Sanyo Electric Co Ltd Sound recording/reproducing device
JPH0457294A (en) * 1990-06-22 1992-02-25 Ricoh Co Ltd Programmable non-volatile semiconductor memory
US5623436A (en) * 1993-06-17 1997-04-22 Information Storage Devices Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques
JP3798810B2 (en) * 1994-06-02 2006-07-19 インテル・コーポレーション Dynamic memory from single bit per cell to multiple bits per cell
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays

Also Published As

Publication number Publication date
EP0766254A3 (en) 1998-09-02
EP0766254A2 (en) 1997-04-02
KR970017669A (en) 1997-04-30
EP0766254B1 (en) 2001-12-19
US5768187A (en) 1998-06-16
DE69618129T2 (en) 2002-06-13
KR100239870B1 (en) 2000-03-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee