DE69520659D1 - Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle - Google Patents

Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle

Info

Publication number
DE69520659D1
DE69520659D1 DE69520659T DE69520659T DE69520659D1 DE 69520659 D1 DE69520659 D1 DE 69520659D1 DE 69520659 T DE69520659 T DE 69520659T DE 69520659 T DE69520659 T DE 69520659T DE 69520659 D1 DE69520659 D1 DE 69520659D1
Authority
DE
Germany
Prior art keywords
match
programmable
jump operation
protection cell
multibit register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69520659T
Other languages
English (en)
Other versions
DE69520659T2 (de
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69520659D1 publication Critical patent/DE69520659D1/de
Application granted granted Critical
Publication of DE69520659T2 publication Critical patent/DE69520659T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE69520659T 1995-01-26 1995-01-26 Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle Expired - Fee Related DE69520659T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830020A EP0724267B1 (de) 1995-01-26 1995-01-26 Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle

Publications (2)

Publication Number Publication Date
DE69520659D1 true DE69520659D1 (de) 2001-05-17
DE69520659T2 DE69520659T2 (de) 2001-08-02

Family

ID=8221845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69520659T Expired - Fee Related DE69520659T2 (de) 1995-01-26 1995-01-26 Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle

Country Status (4)

Country Link
US (1) US5731716A (de)
EP (1) EP0724267B1 (de)
JP (1) JPH08297994A (de)
DE (1) DE69520659T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6270460B1 (en) 1999-06-24 2001-08-07 Acuson Corporation Apparatus and method to limit the life span of a diagnostic medical ultrasound probe
US7145370B2 (en) * 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
US7177201B1 (en) * 2003-09-17 2007-02-13 Sun Microsystems, Inc. Negative bias temperature instability (NBTI) preconditioning of matched devices
US7164612B1 (en) 2003-10-10 2007-01-16 Sun Microsystems, Inc. Test circuit for measuring sense amplifier and memory mismatches
US7177182B2 (en) * 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
US7242614B2 (en) * 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
US7388420B2 (en) * 2004-03-30 2008-06-17 Impinj, Inc. Rewriteable electronic fuses
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7257033B2 (en) * 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US20060215447A1 (en) * 2005-03-24 2006-09-28 Beedar Technology Inc. Asynchronous Memory Array Read/Write Control Circuit
US7679957B2 (en) * 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
US4546454A (en) * 1982-11-05 1985-10-08 Seeq Technology, Inc. Non-volatile memory cell fuse element
US4672240A (en) * 1983-02-07 1987-06-09 Westinghouse Electric Corp. Programmable redundancy circuit
JPS632351A (ja) * 1986-06-20 1988-01-07 Sharp Corp 半導体装置
JPH0612884A (ja) * 1992-06-30 1994-01-21 Nec Corp 連想記憶装置
JP3092333B2 (ja) * 1992-07-01 2000-09-25 松下電器産業株式会社 無線電話装置
FR2715759B1 (fr) * 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable, avec réduction de parasites en mode de lecture, notamment pour circuit de redondance de mémoire.
EP0675440B1 (de) * 1994-03-29 1998-08-05 STMicroelectronics S.r.l. Redundanzschaltung für eine Halbleiter-Speicheranordnung

Also Published As

Publication number Publication date
JPH08297994A (ja) 1996-11-12
EP0724267A1 (de) 1996-07-31
US5731716A (en) 1998-03-24
DE69520659T2 (de) 2001-08-02
EP0724267B1 (de) 2001-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee