DE69509211T2 - STRUCTURE AND PRODUCTION OF BIPOLAR TRANSISTORS - Google Patents
STRUCTURE AND PRODUCTION OF BIPOLAR TRANSISTORSInfo
- Publication number
- DE69509211T2 DE69509211T2 DE69509211T DE69509211T DE69509211T2 DE 69509211 T2 DE69509211 T2 DE 69509211T2 DE 69509211 T DE69509211 T DE 69509211T DE 69509211 T DE69509211 T DE 69509211T DE 69509211 T2 DE69509211 T2 DE 69509211T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- bipolar transistors
- bipolar
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/300,498 US5548158A (en) | 1994-09-02 | 1994-09-02 | Structure of bipolar transistors with improved output current-voltage characteristics |
PCT/US1995/011145 WO1996008039A1 (en) | 1994-09-02 | 1995-08-31 | Structure and fabrication of bipolar transistors with improved output current-voltage characteristics |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69509211D1 DE69509211D1 (en) | 1999-05-27 |
DE69509211T2 true DE69509211T2 (en) | 1999-11-25 |
Family
ID=23159354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69509211T Expired - Lifetime DE69509211T2 (en) | 1994-09-02 | 1995-08-31 | STRUCTURE AND PRODUCTION OF BIPOLAR TRANSISTORS |
Country Status (4)
Country | Link |
---|---|
US (2) | US5548158A (en) |
EP (1) | EP0727097B1 (en) |
DE (1) | DE69509211T2 (en) |
WO (1) | WO1996008039A1 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0151011B1 (en) * | 1994-11-30 | 1998-10-01 | 김광호 | A bipolar transistor and method of manufacturing the same |
JP2748898B2 (en) * | 1995-08-31 | 1998-05-13 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
GB9804177D0 (en) * | 1998-02-28 | 1998-04-22 | Philips Electronics Nv | Semiconductor switch devices and their manufacture |
US6555894B2 (en) * | 1998-04-20 | 2003-04-29 | Intersil Americas Inc. | Device with patterned wells and method for forming same |
DE19857640A1 (en) | 1998-12-14 | 2000-06-15 | Inst Halbleiterphysik Gmbh | Bipolar transistor and process for its manufacture |
US6211028B1 (en) * | 1999-02-05 | 2001-04-03 | Taiwan Semiconductor Manufacturing Company | Twin current bipolar device with hi-lo base profile |
US6410975B1 (en) * | 2000-09-01 | 2002-06-25 | Newport Fab, Llc | Bipolar transistor with reduced base resistance |
US6486532B1 (en) * | 2000-09-30 | 2002-11-26 | Newport Fab, Llc | Structure for reduction of base and emitter resistance and related method |
US6506656B2 (en) | 2001-03-19 | 2003-01-14 | International Business Machines Corporation | Stepped collector implant and method for fabrication |
DE60229400D1 (en) * | 2001-08-06 | 2008-11-27 | Nxp Bv | BIPOLAR TRANSISTOR, SEMICONDUCTOR ELEMENT AND SAME MANUFACTURING METHOD |
DE10164176B4 (en) * | 2001-12-27 | 2007-12-27 | Austriamicrosystems Ag | bipolar transistor |
US7332469B2 (en) | 2002-04-05 | 2008-02-19 | Board Of Regents The University Of Texas System | Intrapleural single-chain urokinase alone or complexed to its soluble receptor protects against pleural adhesions |
US20060024725A1 (en) | 2004-07-30 | 2006-02-02 | Robert Hussa | Oncofetal fibronectin as a marker for pregnancy-related indications |
US20080237657A1 (en) * | 2007-03-26 | 2008-10-02 | Dsm Solution, Inc. | Signaling circuit and method for integrated circuit devices and systems |
US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
US20090168508A1 (en) * | 2007-12-31 | 2009-07-02 | Dsm Solutions, Inc. | Static random access memory having cells with junction field effect and bipolar junction transistors |
US7977715B2 (en) * | 2008-03-17 | 2011-07-12 | Fairchild Semiconductor Corporation | LDMOS devices with improved architectures |
US7696564B1 (en) * | 2009-05-06 | 2010-04-13 | Agamem Microelectronics Inc. | Lateral diffused metal-oxide-semiconductor field-effect transistor |
US8212292B2 (en) * | 2009-11-20 | 2012-07-03 | Freescale Semiconductor, Inc. | High gain tunable bipolar transistor |
SE1150065A1 (en) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Silicon carbide bipolar transistor with overgrown emitter |
DE102011108334B4 (en) * | 2011-07-25 | 2016-05-25 | Texas Instruments Deutschland Gmbh | Electronic device and method for increasing the reliability of bipolar transistors under high voltage conditions |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5247383A (en) * | 1975-10-13 | 1977-04-15 | Toshiba Corp | Semiconductor device |
US4512816A (en) * | 1982-02-26 | 1985-04-23 | National Semiconductor Corporation | High-density IC isolation technique capacitors |
EP0133339A3 (en) * | 1983-07-29 | 1985-03-20 | Trw Inc. | Silicide bipolar transistor and process for making the transistor |
US4669179A (en) * | 1985-11-01 | 1987-06-02 | Advanced Micro Devices, Inc. | Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions |
US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
US5065209A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Bipolar transistor fabrication utilizing CMOS techniques |
US4962053A (en) * | 1987-01-30 | 1990-10-09 | Texas Instruments Incorporated | Bipolar transistor fabrication utilizing CMOS techniques |
US4839305A (en) * | 1988-06-28 | 1989-06-13 | Texas Instruments Incorporated | Method of making single polysilicon self-aligned transistor |
US5006476A (en) * | 1988-09-07 | 1991-04-09 | North American Philips Corp., Signetics Division | Transistor manufacturing process using three-step base doping |
US5079182A (en) * | 1990-04-02 | 1992-01-07 | National Semiconductor Corporation | Bicmos device having self-aligned well tap and method of fabrication |
US5139961A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
US5242854A (en) * | 1990-04-02 | 1993-09-07 | National Semiconductor Corporation | High performance semiconductor devices and their manufacture |
US5071778A (en) * | 1990-06-26 | 1991-12-10 | National Semiconductor Corporation | Self-aligned collector implant for bipolar transistors |
US5212102A (en) * | 1990-08-22 | 1993-05-18 | National Semiconductor Corporation | Method of making polysilicon Schottky clamped transistor and vertical fuse devices |
DE4119904A1 (en) * | 1991-06-17 | 1992-12-24 | Telefunken Electronic Gmbh | SEMICONDUCTOR ARRANGEMENT |
US5274267A (en) * | 1992-01-31 | 1993-12-28 | International Business Machines Corporation | Bipolar transistor with low extrinsic base resistance and low noise |
EP0604163B1 (en) * | 1992-12-21 | 1999-03-24 | STMicroelectronics, Inc. | PN junction diode structure |
-
1994
- 1994-09-02 US US08/300,498 patent/US5548158A/en not_active Expired - Lifetime
-
1995
- 1995-02-24 US US08/393,647 patent/US5589409A/en not_active Expired - Lifetime
- 1995-08-31 DE DE69509211T patent/DE69509211T2/en not_active Expired - Lifetime
- 1995-08-31 WO PCT/US1995/011145 patent/WO1996008039A1/en active IP Right Grant
- 1995-08-31 EP EP95931058A patent/EP0727097B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5589409A (en) | 1996-12-31 |
US5548158A (en) | 1996-08-20 |
EP0727097A1 (en) | 1996-08-21 |
DE69509211D1 (en) | 1999-05-27 |
WO1996008039A1 (en) | 1996-03-14 |
EP0727097B1 (en) | 1999-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |