DE69500616D1 - Verfahren zur Herstellung von teilgeschützten Phenolharzen - Google Patents

Verfahren zur Herstellung von teilgeschützten Phenolharzen

Info

Publication number
DE69500616D1
DE69500616D1 DE69500616T DE69500616T DE69500616D1 DE 69500616 D1 DE69500616 D1 DE 69500616D1 DE 69500616 T DE69500616 T DE 69500616T DE 69500616 T DE69500616 T DE 69500616T DE 69500616 D1 DE69500616 D1 DE 69500616D1
Authority
DE
Germany
Prior art keywords
production
phenolic resins
partially protected
protected phenolic
partially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500616T
Other languages
English (en)
Other versions
DE69500616T2 (de
Inventor
Carl-Lorenz Mertesdorf
Bertold Nathal
Hans-Jorg Kirner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OCG Microelectronic Materials Inc
Original Assignee
OCG Microelectronic Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OCG Microelectronic Materials Inc filed Critical OCG Microelectronic Materials Inc
Publication of DE69500616D1 publication Critical patent/DE69500616D1/de
Application granted granted Critical
Publication of DE69500616T2 publication Critical patent/DE69500616T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F112/00Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F112/02Monomers containing only one unsaturated aliphatic radical
    • C08F112/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F112/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F112/22Oxygen
    • C08F112/24Phenols or alcohols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Emergency Medicine (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
DE69500616T 1994-12-20 1995-12-13 Verfahren zur Herstellung von teilgeschützten Phenolharzen Expired - Fee Related DE69500616T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH383594 1994-12-20
CH167395 1995-06-07

Publications (2)

Publication Number Publication Date
DE69500616D1 true DE69500616D1 (de) 1997-10-02
DE69500616T2 DE69500616T2 (de) 1998-01-02

Family

ID=25688350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500616T Expired - Fee Related DE69500616T2 (de) 1994-12-20 1995-12-13 Verfahren zur Herstellung von teilgeschützten Phenolharzen

Country Status (5)

Country Link
US (1) US5663038A (de)
EP (1) EP0718315B1 (de)
JP (1) JPH08231638A (de)
KR (1) KR960022693A (de)
DE (1) DE69500616T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1275095C (zh) * 1997-09-22 2006-09-13 Az电子材料(日本)株式会社 用于制备抗蚀剂的方法
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
EP1661918A1 (de) * 2003-09-03 2006-05-31 Kyowa Hakko Chemical Co., Ltd. Verfahren zur herstellung einer verbindung mit säurelabiler gruppe
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4007924A1 (de) * 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
EP0520654A1 (de) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Tief-UV-empfindliche, positive Photoresistzusammensetzungen
DE4125258A1 (de) * 1991-07-31 1993-02-04 Hoechst Ag Verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
DE69218393T2 (de) * 1991-12-16 1997-10-16 Matsushita Electric Ind Co Ltd Resistmaterial
EP0588544A3 (en) * 1992-09-14 1994-09-28 Wako Pure Chem Ind Ltd Fine pattern forming material and pattern formation process
WO1994014858A1 (en) * 1992-12-29 1994-07-07 Hoechst Celanese Corporation Metal ion reduction in polyhydroxystyrene and photoresists
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物

Also Published As

Publication number Publication date
EP0718315A1 (de) 1996-06-26
US5663038A (en) 1997-09-02
JPH08231638A (ja) 1996-09-10
DE69500616T2 (de) 1998-01-02
KR960022693A (ko) 1996-07-18
EP0718315B1 (de) 1997-08-27

Similar Documents

Publication Publication Date Title
DE69705161D1 (de) Verfahren zur Herstellung von Bisphenol
DE69704964D1 (de) Verfahren zur Herstellung von Acryloxypropylsilane
DE69503960D1 (de) Verfahren zur Herstellung von Bisphenol
DE69407536D1 (de) Verfahren zur Herstellung von Methanol
DE69527818D1 (de) Verfahren zur Herstellung von Polycarbonaten
DE69508310D1 (de) Verfahren zur Herstellung von Mikrolinsen
DE69800912D1 (de) Verfahren zur Herstellung von Ceramidverbindungen
DE59707913D1 (de) Kontinuierliches Verfahren zur Herstellung von gamma- Aminopropyltrialkoxysilanen
DE69510596D1 (de) Verfahren zur Herstellung von Organooxysilane
DE69611484D1 (de) Verfahren zur Herstellung von Phenol
DE59707907D1 (de) Verfahren zur Herstellung von anorganischen Granulaten
DE69527163D1 (de) Verfahren zur Herstellung von aromatischen Polycarbonaten
DE59500930D1 (de) Verfahren zur Herstellung von Ethanolaminen
DE69712157D1 (de) Verfahren zur Herstellung von Acrylnitril
DE59307616D1 (de) Verfahren zur Herstellung von modifizierten Phenolharzen
DE69902566D1 (de) Verfahren zur Herstellung von modifizierten Terpen-Phenol Harzen
DE59501267D1 (de) Verfahren zur Herstellung von Dinitrotoluol
DE59500588D1 (de) Verfahren zur Herstellung von Trioxan
DE69811870D1 (de) Verfahren zur Herstellung von Methanol
DE59506673D1 (de) Verfahren zur Herstellung von Aminen
DE69513859D1 (de) Verfahren zur Herstellung von hochreaktiven modifizierten Phenolharzen
DE69218033D1 (de) Verfahren zur Herstellung von naphtholmodifizierten Phenolharzen
DE59504048D1 (de) Verfahren zur Herstellung von Dinitrotoluol
DE69513915D1 (de) Verfahren zur Herstellung von aromatischem Polycarbonat
DE59507681D1 (de) Verfahren zur Herstellung von Dinitrotoluol

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee