DE69412414D1 - HALF BRIDGE DRIVER CIRCUIT - Google Patents

HALF BRIDGE DRIVER CIRCUIT

Info

Publication number
DE69412414D1
DE69412414D1 DE69412414T DE69412414T DE69412414D1 DE 69412414 D1 DE69412414 D1 DE 69412414D1 DE 69412414 T DE69412414 T DE 69412414T DE 69412414 T DE69412414 T DE 69412414T DE 69412414 D1 DE69412414 D1 DE 69412414D1
Authority
DE
Germany
Prior art keywords
driver circuit
half bridge
bridge driver
circuit
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412414T
Other languages
German (de)
Other versions
DE69412414T2 (en
Inventor
Rajsekhar Jayaraman
Anand Janaswamy
Ihor Wacyk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69412414D1 publication Critical patent/DE69412414D1/en
Application granted granted Critical
Publication of DE69412414T2 publication Critical patent/DE69412414T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/31—Indexing scheme relating to amplifiers the switching power stage comprising circuitry for emulating the behaviour of a bootstrap diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Power Conversion In General (AREA)
DE69412414T 1993-05-07 1994-05-04 HALF BRIDGE DRIVER CIRCUIT Expired - Fee Related DE69412414T2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6017693A 1993-05-07 1993-05-07
US08/155,053 US5373435A (en) 1993-05-07 1993-11-19 High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
PCT/IB1994/000091 WO1994027370A1 (en) 1993-05-07 1994-05-04 Circuit for driving a half-bridge

Publications (2)

Publication Number Publication Date
DE69412414D1 true DE69412414D1 (en) 1998-09-17
DE69412414T2 DE69412414T2 (en) 1999-03-11

Family

ID=26739651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412414T Expired - Fee Related DE69412414T2 (en) 1993-05-07 1994-05-04 HALF BRIDGE DRIVER CIRCUIT

Country Status (11)

Country Link
US (1) US5373435A (en)
EP (1) EP0649579B1 (en)
JP (1) JPH07508873A (en)
KR (1) KR100341702B1 (en)
CN (1) CN1043106C (en)
CA (1) CA2139229A1 (en)
DE (1) DE69412414T2 (en)
ES (1) ES2122266T3 (en)
SG (1) SG44754A1 (en)
TW (1) TW306093B (en)
WO (1) WO1994027370A1 (en)

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US5502632A (en) * 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5666280A (en) * 1993-05-07 1997-09-09 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode
US5572096A (en) * 1994-05-27 1996-11-05 Sgs-Thomson Microelectronics, Inc. Method and circuit for clamping the recirculation current in stator windings
US5502412A (en) * 1995-05-04 1996-03-26 International Rectifier Corporation Method and circuit for driving power transistors in a half bridge configuration from control signals referenced to any potential between the line voltage and the line voltage return and integrated circuit incorporating the circuit
JP2896342B2 (en) * 1995-05-04 1999-05-31 インターナショナル・レクチファイヤー・コーポレーション Method and circuit for driving a plurality of power transistors in a half-wave bridge configuration and allowing excessive negative oscillation of an output node, and an integrated circuit incorporating the circuit
EP0743752B1 (en) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Charging of a bootstrap capacitance through an LDMOS transistor
DE69502093T2 (en) * 1995-06-30 1998-10-08 Sgs Thomson Microelectronics Supply voltage regulator for bootstrap line without filter capacitor
US5696431A (en) * 1996-05-03 1997-12-09 Philips Electronics North America Corporation Inverter driving scheme for capacitive mode protection
US5680017A (en) * 1996-05-03 1997-10-21 Philips Electronics North America Corporation Driving scheme for minimizing ignition flash
US5742134A (en) * 1996-05-03 1998-04-21 Philips Electronics North America Corp. Inverter driving scheme
EP0887933A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Turn off circuit for an LDMOS in presence of a reverse current
EP0887932A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Control of the body voltage of a high voltage LDMOS
EP0887931A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor
US5903142A (en) * 1997-06-27 1999-05-11 Cypress Semiconductor Corp. Low distortion level shifter
WO1999022409A2 (en) * 1997-10-28 1999-05-06 Koninklijke Philips Electronics N.V. Semiconductor device comprising a half-bridge circuit
KR100321964B1 (en) * 1998-01-05 2002-02-02 인터내셔널 렉터파이어 코퍼레이션 Fully Integrated Ballast Control IC
GB9907021D0 (en) * 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Switch circuit and semiconductor switch for battery-powered equipment
DE19917364A1 (en) * 1999-04-16 2000-10-19 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Half bridge circuit for regulators, has relief capacitor connected in parallel to each series diode which is connected in series to respective switch in main current flow direction
DE19929728B4 (en) * 1999-06-29 2015-08-06 Infineon Technologies Ag Circuit arrangement for controlling a motor
JP4397602B2 (en) * 2002-05-24 2010-01-13 三菱電機株式会社 Semiconductor device
US6643145B1 (en) * 2002-07-26 2003-11-04 Intersil Americas Inc. High resolution digital diode emulator for DC-DC converters
US6812782B2 (en) * 2002-10-25 2004-11-02 Texas Instruments Incorporated Switch mode converter that allows 100% duty cycle on gate driver
KR100894320B1 (en) 2003-03-24 2009-04-24 페어차일드코리아반도체 주식회사 Inverter circuit including switching device to be driven by high voltage intrgrated circuit
US7301370B1 (en) * 2003-05-22 2007-11-27 Cypress Semiconductor Corporation High-speed differential logic to CMOS translator architecture with low data-dependent jitter and duty cycle distortion
ATE490597T1 (en) * 2003-07-04 2010-12-15 Dialog Semiconductor Gmbh HIGH VOLTAGE INTERFACE AND CONTROL CIRCUIT THEREOF
US6781422B1 (en) * 2003-09-17 2004-08-24 System General Corp. Capacitive high-side switch driver for a power converter
US7215189B2 (en) * 2003-11-12 2007-05-08 International Rectifier Corporation Bootstrap diode emulator with dynamic back-gate biasing
US7205751B2 (en) * 2004-03-12 2007-04-17 Intersil America's Inc. Enable and disable of diode emulation in a DC/DC converter
JP4610941B2 (en) * 2004-06-18 2011-01-12 三菱電機株式会社 Semiconductor device
US7106105B2 (en) * 2004-07-21 2006-09-12 Fairchild Semiconductor Corporation High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator
US20060044051A1 (en) * 2004-08-24 2006-03-02 International Rectifier Corporation Bootstrap diode emulator with dynamic back-gate biasing and short-circuit protection
US20070146020A1 (en) * 2005-11-29 2007-06-28 Advanced Analogic Technologies, Inc High Frequency Power MESFET Gate Drive Circuits
US7667491B2 (en) * 2006-02-24 2010-02-23 Freescale Semiconductor, Inc. Low voltage output buffer and method for buffering digital output data
US7456658B2 (en) * 2006-04-07 2008-11-25 International Rectifier Corporation Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator
DE102006034679A1 (en) * 2006-07-24 2008-01-31 Infineon Technologies Ag Semiconductor module with power semiconductor chip and passive component and method for producing the same
CN101529716B (en) * 2006-10-20 2011-11-23 Nxp股份有限公司 Power amplifier
US20080290841A1 (en) * 2007-05-23 2008-11-27 Richtek Technology Corporation Charging Circuit for Bootstrap Capacitor and Integrated Driver Circuit Using Same
FR2947976B1 (en) * 2009-07-07 2011-07-22 Sagem Defense Securite CIRCUIT FOR EXCITATION OF CONTINUOUS CURRENT SENSORS
US8154334B2 (en) * 2009-07-21 2012-04-10 Intersil America Inc. System and method for pre-charging a bootstrap capacitor in a switching regulator with high pre-bias voltage
JP5488256B2 (en) * 2010-06-25 2014-05-14 三菱電機株式会社 Power semiconductor device
JP5511594B2 (en) 2010-08-31 2014-06-04 スパンション エルエルシー Output switching circuit
CN105074922B (en) 2013-06-14 2018-07-03 富士电机株式会社 Semiconductor devices
TWI509964B (en) * 2013-07-19 2015-11-21 Upi Semiconductor Corp Driver and driving control method for power converter
CN104300784B (en) * 2013-07-19 2017-06-09 力智电子股份有限公司 The driver and its drive control method of power supply changeover device
JP6228428B2 (en) 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 Semiconductor device
US9667245B2 (en) 2014-10-10 2017-05-30 Efficient Power Conversion Corporation High voltage zero QRR bootstrap supply
WO2016174756A1 (en) * 2015-04-30 2016-11-03 三菱電機株式会社 Protection circuit and protection circuit system
ITUB20155707A1 (en) 2015-11-18 2017-05-18 St Microelectronics Srl PILOT CIRCUIT, INTEGRATED CIRCUIT AND CORRESPONDENT DEVICE
JP6646490B2 (en) * 2016-03-23 2020-02-14 キヤノン株式会社 Power supply circuit and image forming apparatus
US10454472B2 (en) * 2016-12-01 2019-10-22 Efficient Power Conversion Corporation Bootstrap capacitor over-voltage management circuit for GaN transistor based power converters
DE102017117031A1 (en) 2017-07-27 2019-01-31 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Recharging circuit for modular multilevel converters
JP2018022922A (en) * 2017-10-13 2018-02-08 ルネサスエレクトロニクス株式会社 Semiconductor device
US10536070B1 (en) 2018-08-01 2020-01-14 Infineon Technologies Ag Driver for switching gallium nitride (GaN) devices
US10924106B2 (en) * 2019-01-02 2021-02-16 General Electric Company Miller transition control gate drive circuit
DE102019200965A1 (en) * 2019-01-25 2020-07-30 Danfoss Silicon Power Gmbh POWER MODULE THAT HAS AN ACTIVE MILLER CLAMP FUNCTION
JP7300968B2 (en) 2019-11-14 2023-06-30 三菱電機株式会社 semiconductor equipment
JP7388317B2 (en) * 2020-08-27 2023-11-29 三菱電機株式会社 Drive circuit and inverter device
CN114268219B (en) * 2021-12-20 2023-09-12 中国电子科技集团公司第五十八研究所 Bootstrap circuit for driving high-side NMOS (N-channel metal oxide semiconductor) tube
US20230387796A1 (en) * 2022-05-24 2023-11-30 Psemi Corporation Charging Circuit for Bootstrap Capacitors

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DE3031299A1 (en) * 1980-08-19 1982-03-25 Siemens AG, 1000 Berlin und 8000 München DRIVER STAGE FOR A STATIC MOS SEMICONDUCTOR DIGITAL CIRCUIT
US4443715A (en) * 1982-03-25 1984-04-17 Gte Laboratories Incorporated Driver circuit
US4633381A (en) * 1985-02-26 1986-12-30 Sundstrand Corporation Inverter shoot-through protection circuit
JPS61277223A (en) * 1985-06-03 1986-12-08 Mitsubishi Electric Corp Semiconductor module
US4685040A (en) * 1985-12-06 1987-08-04 General Electric Company Integrated circuit for controlling power converter by frequency modulation and pulse width modulation
US4740717A (en) * 1986-11-25 1988-04-26 North American Philips Corporation, Signetics Division Switching device with dynamic hysteresis
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IT1227430B (en) * 1988-07-22 1991-04-11 Sgs Thomson Microelectronics INDUCTANCE AND CAPACITY CHARGE PUMP CIRCUIT FOR PILOTING POWER MOS TRANSISTOR BRIDGES.
US4989127A (en) * 1989-05-09 1991-01-29 North American Philips Corporation Driver for high voltage half-bridge circuits
US4994955A (en) * 1989-12-29 1991-02-19 North American Philips Corporation Half-bridge driver which is insensitive to common mode currents
JP2773476B2 (en) * 1991-07-23 1998-07-09 日産自動車株式会社 Load control power supply
JP3025715B2 (en) * 1991-07-31 2000-03-27 三洋電機株式会社 Inverter circuit

Also Published As

Publication number Publication date
JPH07508873A (en) 1995-09-28
EP0649579A1 (en) 1995-04-26
ES2122266T3 (en) 1998-12-16
CN1109699A (en) 1995-10-04
WO1994027370A1 (en) 1994-11-24
KR950702759A (en) 1995-07-29
EP0649579B1 (en) 1998-08-12
TW306093B (en) 1997-05-21
CN1043106C (en) 1999-04-21
DE69412414T2 (en) 1999-03-11
SG44754A1 (en) 1997-12-19
KR100341702B1 (en) 2002-11-13
US5373435A (en) 1994-12-13
CA2139229A1 (en) 1994-11-24

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8339 Ceased/non-payment of the annual fee