DE69331411D1 - Beschneiden der breite eines grabens - Google Patents
Beschneiden der breite eines grabensInfo
- Publication number
- DE69331411D1 DE69331411D1 DE69331411T DE69331411T DE69331411D1 DE 69331411 D1 DE69331411 D1 DE 69331411D1 DE 69331411 T DE69331411 T DE 69331411T DE 69331411 T DE69331411 T DE 69331411T DE 69331411 D1 DE69331411 D1 DE 69331411D1
- Authority
- DE
- Germany
- Prior art keywords
- pruning
- trench
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000013138 pruning Methods 0.000 title 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15C—FLUID-CIRCUIT ELEMENTS PREDOMINANTLY USED FOR COMPUTING OR CONTROL PURPOSES
- F15C5/00—Manufacture of fluid circuit elements; Manufacture of assemblages of such elements integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Fluid Mechanics (AREA)
- Theoretical Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/941,997 US5328559A (en) | 1992-09-08 | 1992-09-08 | Groove width trimming |
PCT/US1993/007755 WO1994005516A1 (en) | 1992-09-08 | 1993-08-18 | Groove width trimming |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69331411D1 true DE69331411D1 (de) | 2002-02-07 |
DE69331411T2 DE69331411T2 (de) | 2002-08-01 |
Family
ID=25477432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69331411T Expired - Lifetime DE69331411T2 (de) | 1992-09-08 | 1993-08-18 | Beschneiden der breite eines grabens |
Country Status (6)
Country | Link |
---|---|
US (1) | US5328559A (de) |
EP (1) | EP0616573B1 (de) |
AU (1) | AU5018593A (de) |
CA (1) | CA2123004A1 (de) |
DE (1) | DE69331411T2 (de) |
WO (1) | WO1994005516A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640995A (en) * | 1995-03-14 | 1997-06-24 | Baxter International Inc. | Electrofluidic standard module and custom circuit board assembly |
SE506163C2 (sv) | 1995-04-27 | 1997-11-17 | Ericsson Telefon Ab L M | Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning |
JP3353644B2 (ja) * | 1997-04-24 | 2002-12-03 | 日本電気株式会社 | プロセスシミュレーション方法 |
TW379404B (en) * | 1997-12-31 | 2000-01-11 | United Semiconductor Corp | Manufacturing method of shallow trench isolation |
US6040597A (en) * | 1998-02-13 | 2000-03-21 | Advanced Micro Devices, Inc. | Isolation boundaries in flash memory cores |
US6239484B1 (en) * | 1999-06-09 | 2001-05-29 | International Business Machines Corporation | Underfill of chip-under-chip semiconductor modules |
US8048789B2 (en) * | 2005-04-26 | 2011-11-01 | Northwestern University | Mesoscale pyramids, arrays and methods of preparation |
US7999353B1 (en) * | 2005-04-26 | 2011-08-16 | Northwestern University | Mesoscale pyramids, hole arrays and methods of preparation |
WO2008134363A1 (en) * | 2007-04-25 | 2008-11-06 | The Regents Of The University Of Michigan | Tunable elastomeric nanochannels for nanofluidic manipulation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
US4169000A (en) * | 1976-09-02 | 1979-09-25 | International Business Machines Corporation | Method of forming an integrated circuit structure with fully-enclosed air isolation |
US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
US4178197A (en) * | 1979-03-05 | 1979-12-11 | International Business Machines Corporation | Formation of epitaxial tunnels utilizing oriented growth techniques |
JPS59163829A (ja) * | 1983-03-08 | 1984-09-14 | Matsushita Electronics Corp | パタ−ン形成方法 |
JPH0223617A (ja) * | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | 半導体基板ウェハの溝形成方法 |
US5155061A (en) * | 1991-06-03 | 1992-10-13 | Allied-Signal Inc. | Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures |
US5098856A (en) * | 1991-06-18 | 1992-03-24 | International Business Machines Corporation | Air-filled isolation trench with chemically vapor deposited silicon dioxide cap |
-
1992
- 1992-09-08 US US07/941,997 patent/US5328559A/en not_active Expired - Lifetime
-
1993
- 1993-08-18 EP EP93920156A patent/EP0616573B1/de not_active Expired - Lifetime
- 1993-08-18 DE DE69331411T patent/DE69331411T2/de not_active Expired - Lifetime
- 1993-08-18 AU AU50185/93A patent/AU5018593A/en not_active Abandoned
- 1993-08-18 CA CA002123004A patent/CA2123004A1/en not_active Abandoned
- 1993-08-18 WO PCT/US1993/007755 patent/WO1994005516A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US5328559A (en) | 1994-07-12 |
EP0616573B1 (de) | 2002-01-02 |
WO1994005516A1 (en) | 1994-03-17 |
CA2123004A1 (en) | 1994-03-17 |
EP0616573A4 (en) | 1997-09-03 |
DE69331411T2 (de) | 2002-08-01 |
AU5018593A (en) | 1994-03-29 |
EP0616573A1 (de) | 1994-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |