DE69330535D1 - Ladungsträger-Durchflusskontrollanordnung - Google Patents

Ladungsträger-Durchflusskontrollanordnung

Info

Publication number
DE69330535D1
DE69330535D1 DE69330535T DE69330535T DE69330535D1 DE 69330535 D1 DE69330535 D1 DE 69330535D1 DE 69330535 T DE69330535 T DE 69330535T DE 69330535 T DE69330535 T DE 69330535T DE 69330535 D1 DE69330535 D1 DE 69330535D1
Authority
DE
Germany
Prior art keywords
flow control
control arrangement
carrier flow
carrier
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330535T
Other languages
English (en)
Other versions
DE69330535T2 (de
Inventor
Julian D White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Publication of DE69330535D1 publication Critical patent/DE69330535D1/de
Application granted granted Critical
Publication of DE69330535T2 publication Critical patent/DE69330535T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69330535T 1992-03-19 1993-03-15 Ladungsträger-Durchflusskontrollanordnung Expired - Fee Related DE69330535T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929206149A GB9206149D0 (en) 1992-03-19 1992-03-19 Charge carrier flow control device

Publications (2)

Publication Number Publication Date
DE69330535D1 true DE69330535D1 (de) 2001-09-13
DE69330535T2 DE69330535T2 (de) 2002-04-18

Family

ID=10712550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330535T Expired - Fee Related DE69330535T2 (de) 1992-03-19 1993-03-15 Ladungsträger-Durchflusskontrollanordnung

Country Status (3)

Country Link
EP (1) EP0561580B1 (de)
DE (1) DE69330535T2 (de)
GB (1) GB9206149D0 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9311111D0 (en) * 1993-05-28 1993-07-14 Hitachi Europ Ltd Quantum structure devices
GB9415718D0 (en) * 1994-08-03 1994-09-21 Hitachi Europ Ltd Conduction control device
CN104112752B (zh) 2014-05-16 2017-03-08 华南师范大学 具有相位锁定功能的平面纳米振荡器阵列

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren

Also Published As

Publication number Publication date
EP0561580A3 (en) 1994-07-06
EP0561580B1 (de) 2001-08-08
EP0561580A2 (de) 1993-09-22
GB9206149D0 (en) 1992-05-06
DE69330535T2 (de) 2002-04-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee