DE69330535D1 - Ladungsträger-Durchflusskontrollanordnung - Google Patents
Ladungsträger-DurchflusskontrollanordnungInfo
- Publication number
- DE69330535D1 DE69330535D1 DE69330535T DE69330535T DE69330535D1 DE 69330535 D1 DE69330535 D1 DE 69330535D1 DE 69330535 T DE69330535 T DE 69330535T DE 69330535 T DE69330535 T DE 69330535T DE 69330535 D1 DE69330535 D1 DE 69330535D1
- Authority
- DE
- Germany
- Prior art keywords
- flow control
- control arrangement
- carrier flow
- carrier
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB929206149A GB9206149D0 (en) | 1992-03-19 | 1992-03-19 | Charge carrier flow control device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69330535D1 true DE69330535D1 (de) | 2001-09-13 |
DE69330535T2 DE69330535T2 (de) | 2002-04-18 |
Family
ID=10712550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69330535T Expired - Fee Related DE69330535T2 (de) | 1992-03-19 | 1993-03-15 | Ladungsträger-Durchflusskontrollanordnung |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0561580B1 (de) |
DE (1) | DE69330535T2 (de) |
GB (1) | GB9206149D0 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9311111D0 (en) * | 1993-05-28 | 1993-07-14 | Hitachi Europ Ltd | Quantum structure devices |
GB9415718D0 (en) * | 1994-08-03 | 1994-09-21 | Hitachi Europ Ltd | Conduction control device |
CN104112752B (zh) | 2014-05-16 | 2017-03-08 | 华南师范大学 | 具有相位锁定功能的平面纳米振荡器阵列 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394757B1 (de) * | 1989-04-27 | 1998-10-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren |
-
1992
- 1992-03-19 GB GB929206149A patent/GB9206149D0/en active Pending
-
1993
- 1993-03-15 EP EP93301928A patent/EP0561580B1/de not_active Expired - Lifetime
- 1993-03-15 DE DE69330535T patent/DE69330535T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0561580A3 (en) | 1994-07-06 |
EP0561580B1 (de) | 2001-08-08 |
EP0561580A2 (de) | 1993-09-22 |
GB9206149D0 (en) | 1992-05-06 |
DE69330535T2 (de) | 2002-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |