DE69317141D1 - Anisotropische Ätzung von Metalloxid - Google Patents

Anisotropische Ätzung von Metalloxid

Info

Publication number
DE69317141D1
DE69317141D1 DE69317141T DE69317141T DE69317141D1 DE 69317141 D1 DE69317141 D1 DE 69317141D1 DE 69317141 T DE69317141 T DE 69317141T DE 69317141 T DE69317141 T DE 69317141T DE 69317141 D1 DE69317141 D1 DE 69317141D1
Authority
DE
Germany
Prior art keywords
metal oxide
anisotropic etching
anisotropic
etching
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317141T
Other languages
English (en)
Other versions
DE69317141T2 (de
Inventor
Monte A Douglas
Scott R Summerfelt
Howard R Beratan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/871,862 external-priority patent/US5238529A/en
Priority claimed from US07/872,701 external-priority patent/US5201989A/en
Priority claimed from US07/871,863 external-priority patent/US5238530A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69317141D1 publication Critical patent/DE69317141D1/de
Publication of DE69317141T2 publication Critical patent/DE69317141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
DE1993617141 1992-04-20 1993-04-20 Anisotropische Ätzung von Metalloxid Expired - Fee Related DE69317141T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US87270292A 1992-04-20 1992-04-20
US87098892A 1992-04-20 1992-04-20
US07/871,862 US5238529A (en) 1992-04-20 1992-04-20 Anisotropic metal oxide etch
US07/872,701 US5201989A (en) 1992-04-20 1992-04-20 Anisotropic niobium pentoxide etch
US07/871,863 US5238530A (en) 1992-04-20 1992-04-20 Anisotropic titanate etch

Publications (2)

Publication Number Publication Date
DE69317141D1 true DE69317141D1 (de) 1998-04-09
DE69317141T2 DE69317141T2 (de) 1998-06-25

Family

ID=27542276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993617141 Expired - Fee Related DE69317141T2 (de) 1992-04-20 1993-04-20 Anisotropische Ätzung von Metalloxid

Country Status (2)

Country Link
EP (1) EP0567063B1 (de)
DE (1) DE69317141T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
ATE352868T1 (de) * 1998-07-23 2007-02-15 Surface Technology Systems Plc Verfahren für anisotropes ätzen
US6358430B1 (en) * 1999-07-28 2002-03-19 Motorola, Inc. Technique for etching oxides and/or insulators
DE10244862B4 (de) * 2002-09-23 2006-09-14 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht
US20040166678A1 (en) * 2003-02-24 2004-08-26 Hall Lindsey H. Wet clean method for PZT capacitors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material
US4978418A (en) * 1988-08-18 1990-12-18 The United States Of America As Represented By The United States Department Of Energy Controlled ion implant damage profile for etching
JPH04124078A (ja) * 1990-09-17 1992-04-24 Canon Inc 微細加工方法

Also Published As

Publication number Publication date
EP0567063A3 (de) 1994-03-09
EP0567063B1 (de) 1998-03-04
DE69317141T2 (de) 1998-06-25
EP0567063A2 (de) 1993-10-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee