DE69310040D1 - Verfahren zum Ätzen einer Diamantkörpers mit einem geschmolzenen Metall oder teilweise geschmolzenem Metall - Google Patents

Verfahren zum Ätzen einer Diamantkörpers mit einem geschmolzenen Metall oder teilweise geschmolzenem Metall

Info

Publication number
DE69310040D1
DE69310040D1 DE69310040T DE69310040T DE69310040D1 DE 69310040 D1 DE69310040 D1 DE 69310040D1 DE 69310040 T DE69310040 T DE 69310040T DE 69310040 T DE69310040 T DE 69310040T DE 69310040 D1 DE69310040 D1 DE 69310040D1
Authority
DE
Germany
Prior art keywords
molten metal
etching
diamond body
partially
partially molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69310040T
Other languages
English (en)
Other versions
DE69310040T2 (de
Inventor
William Cross Dautremont-Smith
John Edwin Graebner
Sungho Jin
Avishay Katz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69310040D1 publication Critical patent/DE69310040D1/de
Application granted granted Critical
Publication of DE69310040T2 publication Critical patent/DE69310040T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5361—Etching with molten material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69310040T 1992-07-02 1993-06-24 Verfahren zum Ätzen einer Diamantkörpers mit einem geschmolzenen Metall oder teilweise geschmolzenem Metall Expired - Fee Related DE69310040T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/908,130 US5486263A (en) 1992-07-02 1992-07-02 Etching a diamond body with a molten or partially molten metal

Publications (2)

Publication Number Publication Date
DE69310040D1 true DE69310040D1 (de) 1997-05-28
DE69310040T2 DE69310040T2 (de) 1997-08-07

Family

ID=25425248

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69310040T Expired - Fee Related DE69310040T2 (de) 1992-07-02 1993-06-24 Verfahren zum Ätzen einer Diamantkörpers mit einem geschmolzenen Metall oder teilweise geschmolzenem Metall

Country Status (7)

Country Link
US (1) US5486263A (de)
EP (1) EP0581438B1 (de)
JP (1) JP2609047B2 (de)
KR (1) KR940005829A (de)
DE (1) DE69310040T2 (de)
IL (1) IL106189A (de)
TW (1) TW216780B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5713775A (en) * 1995-05-02 1998-02-03 Massachusetts Institute Of Technology Field emitters of wide-bandgap materials and methods for their fabrication
US5665252A (en) * 1995-07-12 1997-09-09 Lucent Technologies Inc. Method of shaping a polycrystalline diamond body
US6907054B2 (en) * 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US7432132B1 (en) * 2004-03-29 2008-10-07 United States Of America As Represented By The Secretary Of The Air Force Integrated diamond carrier method for laser bar arrays
KR100683574B1 (ko) * 2004-10-19 2007-02-16 한국과학기술연구원 기하학적 형태의 다이아몬드 쉘 및 그 제조방법
US9095841B2 (en) 2006-08-02 2015-08-04 Us Synthetic Corporation Separation device and chemical reaction apparatus made from polycrystalline diamond, apparatuses including same such as separation apparatuses, and methods of use
US20090218287A1 (en) * 2008-03-03 2009-09-03 Us Synthetic Corporation Solid phase extraction apparatuses and methods
US20100213175A1 (en) * 2009-02-22 2010-08-26 General Electric Company Diamond etching method and articles produced thereby

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB426371A (en) * 1933-02-17 1935-04-02 Agostino Arduino Improvements in catalytic heating apparatus
DE2953636C2 (de) * 1979-04-13 1985-03-21 Institut geologii jakutskogo filiala Sibirskogo otdelenija Akademii Nauk SSSR, Jakutsk Verfahren zur Bearbeitung von Diamant
FR2461031A1 (fr) * 1979-07-06 1981-01-30 Inst Geol Yakutskogo Procede de travail de diamant
JPS63144940A (ja) * 1986-12-09 1988-06-17 Showa Denko Kk ダイヤモンド面の研摩法

Also Published As

Publication number Publication date
EP0581438A2 (de) 1994-02-02
IL106189A (en) 1996-06-18
JPH0692792A (ja) 1994-04-05
EP0581438B1 (de) 1997-04-23
IL106189A0 (en) 1993-10-20
EP0581438A3 (en) 1994-05-11
JP2609047B2 (ja) 1997-05-14
KR940005829A (ko) 1994-03-22
DE69310040T2 (de) 1997-08-07
TW216780B (en) 1993-12-01
US5486263A (en) 1996-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee