DE69210735D1 - Ungekühlter Infrarot-Detektor und Herstellungsverfahren dazu - Google Patents

Ungekühlter Infrarot-Detektor und Herstellungsverfahren dazu

Info

Publication number
DE69210735D1
DE69210735D1 DE69210735T DE69210735T DE69210735D1 DE 69210735 D1 DE69210735 D1 DE 69210735D1 DE 69210735 T DE69210735 T DE 69210735T DE 69210735 T DE69210735 T DE 69210735T DE 69210735 D1 DE69210735 D1 DE 69210735D1
Authority
DE
Germany
Prior art keywords
manufacturing process
infrared detector
process therefor
uncooled infrared
uncooled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69210735T
Other languages
English (en)
Other versions
DE69210735T2 (de
Inventor
William F Keenan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
L3 Technologies Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/766,879 external-priority patent/US5196703A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69210735D1 publication Critical patent/DE69210735D1/de
Publication of DE69210735T2 publication Critical patent/DE69210735T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H01L27/1467—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H04N25/674—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources based on the scene itself, e.g. defocusing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Radiation Pyrometers (AREA)
DE69210735T 1991-09-27 1992-09-25 Ungekühlter Infrarot-Detektor und Herstellungsverfahren dazu Expired - Fee Related DE69210735T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/766,879 US5196703A (en) 1991-09-27 1991-09-27 Readout system and process for IR detector arrays
US76880191A 1991-09-30 1991-09-30

Publications (2)

Publication Number Publication Date
DE69210735D1 true DE69210735D1 (de) 1996-06-20
DE69210735T2 DE69210735T2 (de) 1996-10-24

Family

ID=27117809

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69221054T Expired - Fee Related DE69221054T2 (de) 1991-09-27 1992-09-25 Lese-System und Verfahren für Infrarotdetektoranordnungen
DE69210735T Expired - Fee Related DE69210735T2 (de) 1991-09-27 1992-09-25 Ungekühlter Infrarot-Detektor und Herstellungsverfahren dazu

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69221054T Expired - Fee Related DE69221054T2 (de) 1991-09-27 1992-09-25 Lese-System und Verfahren für Infrarotdetektoranordnungen

Country Status (2)

Country Link
EP (2) EP0534769B1 (de)
DE (2) DE69221054T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2728728B1 (fr) * 1993-09-27 1998-01-09 Commissariat Energie Atomique Dispositif de detection bolometrique et procedes de fabrication de ce dispositif
FR2735574B1 (fr) * 1995-06-15 1997-07-18 Commissariat Energie Atomique Dispositif de detection bolometrique pour ondes millimetriques et submillimetriques et procede de fabrication de ce dispositif
EP0835586B1 (de) * 1995-06-28 2002-01-16 Lockheed Martin IR Imaging Systems, Inc. Digitale offsetkorrektur für mikrobolometermatrix
US6064066A (en) * 1995-07-21 2000-05-16 Texas Insruments Incorporated Bolometer autocalibration
US6392232B1 (en) 1995-07-21 2002-05-21 Pharmarcopeia, Inc. High fill factor bolometer array
US5789753A (en) * 1995-07-21 1998-08-04 Texas Instruments Incorporated Stress tolerant bolometer
EP0773435A3 (de) * 1995-07-21 1998-03-11 Texas Instruments Incorporated Verfahren und Vorrichtungen zur Strahlungsmessung
US5841137A (en) * 1995-08-11 1998-11-24 Texas Instruments Incorporated Duplicative detector sensor
US6515285B1 (en) 1995-10-24 2003-02-04 Lockheed-Martin Ir Imaging Systems, Inc. Method and apparatus for compensating a radiation sensor for ambient temperature variations
GB9524646D0 (en) * 1995-12-01 1996-01-31 Secr Defence Infra-red imaging systems
SE505753C3 (sv) * 1996-01-11 1997-10-06 Imc Ind Mikroelektronikcentrum Strukturer foer temperatursensorer och infraroeddetektorer
US5942791A (en) * 1996-03-06 1999-08-24 Gec-Marconi Limited Micromachined devices having microbridge structure
GB9604786D0 (en) * 1996-03-06 1996-09-25 Marconi Gec Ltd Micromachined devices
US6274869B1 (en) 1996-06-28 2001-08-14 Lockheed-Martin Ir Imaging Systems, Inc. Digital offset corrector
FR2752299B1 (fr) * 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
US6249002B1 (en) 1996-08-30 2001-06-19 Lockheed-Martin Ir Imaging Systems, Inc. Bolometric focal plane array
US6791610B1 (en) 1996-10-24 2004-09-14 Lockheed Martin Ir Imaging Systems, Inc. Uncooled focal plane array sensor
DE19758939B4 (de) * 1997-08-14 2014-07-03 Excelitas Technologies Singapore Pte Ltd Verfahren zur Herstellung eines Substrats, Sensorsystem
DE19735379B4 (de) 1997-08-14 2008-06-05 Perkinelmer Optoelectronics Gmbh Sensorsystem und Herstellungsverfahren
JP3003853B2 (ja) * 1997-09-09 2000-01-31 本田技研工業株式会社 ブリッジ構造を有するセンサ
EP0964230A3 (de) * 1998-06-09 2000-01-26 Heraeus Electro-Nite International N.V. Elektrischer Widerstand mit wenigstens zwei Anschlusskontaktfeldern auf einem Keramik-Substrat sowie Verfahren zu dessen Herstellung
WO2000003214A1 (en) * 1998-07-09 2000-01-20 Korea Advanced Institute Of Science And Technology Bolometer having an increased fill factor
WO2000012985A1 (en) * 1998-08-31 2000-03-09 Daewoo Electronics Co., Ltd. Bolometer including an absorber made of a material having a low deposition-temperature and a low heat-conductivity
GB2359192B (en) * 1999-09-16 2004-03-31 Sharp Kk Thermal-type infrared radiation detector cell and image capture device incorporating the same
JP2001264441A (ja) * 2000-01-14 2001-09-26 Seiko Instruments Inc カロリーメーターとその製造方法
JP3921320B2 (ja) * 2000-01-31 2007-05-30 日本電気株式会社 熱型赤外線検出器およびその製造方法
IL152425A (en) 2000-05-01 2006-12-10 Bae Systems Information Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor
US6621083B2 (en) * 2000-12-29 2003-09-16 Honeywell International Inc. High-absorption wide-band pixel for bolometer arrays
US6815659B2 (en) * 2002-01-14 2004-11-09 Palantyr Research, Llc Optical system and method of making same
US7030378B2 (en) 2003-08-05 2006-04-18 Bae Systems Information And Electronic Systems Integration, Inc. Real-time radiation sensor calibration

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142207A (en) 1977-12-20 1979-02-27 Texas Instruments Incorporated Ferroelectric imaging system
US4379232A (en) 1977-12-19 1983-04-05 Texas Instruments Incorporated Ferroelectric imaging system
US4348611A (en) 1978-03-02 1982-09-07 Wolfgang Ruppel Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer
DE2919936A1 (de) * 1979-05-17 1980-11-20 Licentia Gmbh Verfahren und schaltungsanordnung zur trennung des thermischen hintergrundsignals eines ir-detektors vom nutzsignal
US4686373A (en) 1983-08-31 1987-08-11 Texas Instruments Incorporated Infrared imager
FR2591409B1 (fr) * 1985-12-10 1988-08-19 Telecommunications Sa Camera thermique a balayage parallele
US4754139A (en) * 1986-04-10 1988-06-28 Aerojet-General Corporation Uncooled high resolution infrared imaging plane
US4752741A (en) * 1986-11-26 1988-06-21 Honeywell Inc. Noise extraction circuit
US5021663B1 (en) 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
EP0354369B1 (de) * 1988-08-12 1995-07-26 Texas Instruments Incorporated Infrarot-Detektor
GB2222738B (en) * 1988-09-07 1992-09-23 Secr Defence Correction circuit for infrared detectors

Also Published As

Publication number Publication date
EP0534769A2 (de) 1993-03-31
EP0534768A1 (de) 1993-03-31
EP0534769A3 (en) 1993-07-14
DE69221054T2 (de) 1998-01-22
DE69221054D1 (de) 1997-09-04
DE69210735T2 (de) 1996-10-24
EP0534769B1 (de) 1997-07-23
EP0534768B1 (de) 1996-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO. (N.D.GES.D. STAATES DELAWARE), LEXING

8327 Change in the person/name/address of the patent owner

Owner name: L-3 COMMUNICATIONS CORP., NEW YORK, N.Y., US

8328 Change in the person/name/address of the agent

Representative=s name: DEHMEL & BETTENHAUSEN, PATENTANWAELTE, 80331 MUENCHEN

8339 Ceased/non-payment of the annual fee