DE69209473D1 - Vorrichtung zum Erstarren von dotiertem, elektrisch leitenden Material und zur kontinuierlichen Überwachung der Konzentration des Dotierstoffes - Google Patents
Vorrichtung zum Erstarren von dotiertem, elektrisch leitenden Material und zur kontinuierlichen Überwachung der Konzentration des DotierstoffesInfo
- Publication number
- DE69209473D1 DE69209473D1 DE69209473T DE69209473T DE69209473D1 DE 69209473 D1 DE69209473 D1 DE 69209473D1 DE 69209473 T DE69209473 T DE 69209473T DE 69209473 T DE69209473 T DE 69209473T DE 69209473 D1 DE69209473 D1 DE 69209473D1
- Authority
- DE
- Germany
- Prior art keywords
- dopant
- solidifying
- doped
- concentration
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/02—Investigating or analyzing materials by the use of thermal means by investigating changes of state or changes of phase; by investigating sintering
- G01N25/04—Investigating or analyzing materials by the use of thermal means by investigating changes of state or changes of phase; by investigating sintering of melting point; of freezing point; of softening point
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9115995A FR2685483A1 (fr) | 1991-12-23 | 1991-12-23 | Dispositif de solidification d'un materiau conducteur de l'electricite dope et de controle en continu de sa teneur en dopant. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69209473D1 true DE69209473D1 (de) | 1996-05-02 |
DE69209473T2 DE69209473T2 (de) | 1996-10-10 |
Family
ID=9420375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69209473T Expired - Fee Related DE69209473T2 (de) | 1991-12-23 | 1992-12-21 | Vorrichtung zum Erstarren von dotiertem, elektrisch leitenden Material und zur kontinuierlichen Überwachung der Konzentration des Dotierstoffes |
Country Status (5)
Country | Link |
---|---|
US (1) | US5394828A (de) |
EP (1) | EP0549449B1 (de) |
JP (1) | JPH05294775A (de) |
DE (1) | DE69209473T2 (de) |
FR (1) | FR2685483A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2763344B1 (fr) * | 1997-05-16 | 1999-08-06 | Commissariat Energie Atomique | Dispositif de solidification et de controle en continu de la croissance cristalline d'un materiau dope ou d'un alliage conducteurs de l'electricite |
FR2772394B1 (fr) * | 1997-12-17 | 2000-01-14 | Commissariat Energie Atomique | Dispositif de mesure de la solidification d'un materiau conducteur de l'electricite, dope, et de controle en continu de sa teneur en dopant |
CN116482150B (zh) * | 2023-06-25 | 2023-09-12 | 浙江珏芯微电子有限公司 | 一种碲镉汞掺杂激活率评估方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3119778A (en) * | 1959-01-20 | 1964-01-28 | Clevite Corp | Method and apparatus for crystal growth |
US3139653A (en) * | 1959-08-06 | 1964-07-07 | Theodore H Orem | Apparatus for the growth of preferentially oriented single crystals of metals |
BE795847Q (fr) * | 1968-09-11 | 1973-06-18 | Salzgitter Peine Stahlwerke | Procede de determination de la teneur en oxygene de masses fondues de metaux, en particulier, d'acier |
DE2624357A1 (de) * | 1975-06-11 | 1976-12-23 | Commissariat Energie Atomique | Verfahren und vorrichtung zum messen und regeln der erstarrung eines fluessig/ fest-zweiphasensystems |
DD222046A1 (de) * | 1983-08-31 | 1985-05-08 | Humboldt Uni Berlin Direktorat | Verfahren zur thermoelektrischen prozesskontrolle von halbleiter-kristallzuechtungsvorgaengen |
FR2551470B1 (fr) * | 1983-09-06 | 1985-11-08 | Crismatec | Tete de tirage de monocristaux |
FR2597884B1 (fr) * | 1986-04-28 | 1994-03-18 | Commissariat A Energie Atomique | Procede et dispositif de controle en continu de la surfusion du front de solidification d'un monocristal en cours d'elaboration et application au controle de la croissance d'un crital |
US5047113A (en) * | 1989-08-23 | 1991-09-10 | Aleksandar Ostrogorsky | Method for directional solidification of single crystals |
-
1991
- 1991-12-23 FR FR9115995A patent/FR2685483A1/fr active Granted
-
1992
- 1992-12-14 US US07/990,048 patent/US5394828A/en not_active Expired - Fee Related
- 1992-12-21 EP EP92403497A patent/EP0549449B1/de not_active Expired - Lifetime
- 1992-12-21 DE DE69209473T patent/DE69209473T2/de not_active Expired - Fee Related
- 1992-12-22 JP JP4356399A patent/JPH05294775A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2685483B1 (de) | 1994-07-13 |
EP0549449A1 (de) | 1993-06-30 |
EP0549449B1 (de) | 1996-03-27 |
FR2685483A1 (fr) | 1993-06-25 |
DE69209473T2 (de) | 1996-10-10 |
JPH05294775A (ja) | 1993-11-09 |
US5394828A (en) | 1995-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |