DE69127176T2 - Monolithischer Infrarotdetektor aus pyroelektrischem Material - Google Patents

Monolithischer Infrarotdetektor aus pyroelektrischem Material

Info

Publication number
DE69127176T2
DE69127176T2 DE69127176T DE69127176T DE69127176T2 DE 69127176 T2 DE69127176 T2 DE 69127176T2 DE 69127176 T DE69127176 T DE 69127176T DE 69127176 T DE69127176 T DE 69127176T DE 69127176 T2 DE69127176 T2 DE 69127176T2
Authority
DE
Germany
Prior art keywords
infrared detector
pyroelectric material
detector made
monolithic infrared
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127176T
Other languages
English (en)
Other versions
DE69127176D1 (de
Inventor
Pierre Dautriche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson SCF Semiconducteurs Specifiques filed Critical Thomson SCF Semiconducteurs Specifiques
Application granted granted Critical
Publication of DE69127176D1 publication Critical patent/DE69127176D1/de
Publication of DE69127176T2 publication Critical patent/DE69127176T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69127176T 1990-12-11 1991-12-06 Monolithischer Infrarotdetektor aus pyroelektrischem Material Expired - Fee Related DE69127176T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9015476A FR2670325B1 (fr) 1990-12-11 1990-12-11 Detecteur infrarouge monolithique a materiau pyroelectrique.

Publications (2)

Publication Number Publication Date
DE69127176D1 DE69127176D1 (de) 1997-09-11
DE69127176T2 true DE69127176T2 (de) 1998-01-15

Family

ID=9403104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127176T Expired - Fee Related DE69127176T2 (de) 1990-12-11 1991-12-06 Monolithischer Infrarotdetektor aus pyroelektrischem Material

Country Status (4)

Country Link
US (1) US5283438A (de)
EP (1) EP0491596B1 (de)
DE (1) DE69127176T2 (de)
FR (1) FR2670325B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2700091B1 (fr) * 1992-12-30 1995-01-27 Thomson Csf Semiconducteurs Détecteur d'image thermique avec période d'obturation rapide et procédé de fonctionnement.
FR2701602B1 (fr) * 1993-02-12 1995-03-31 Thomson Csf Détecteur thermique comprenant un isolant thermique en polymère expansé.
US5625188A (en) * 1993-10-29 1997-04-29 Murata Manufacturing Co., Ltd. Pyroelectric infrared array sensor
US5804823A (en) * 1995-10-10 1998-09-08 Raytheon Company Bismuth layered structure pyroelectric detectors
US5949071A (en) * 1997-08-14 1999-09-07 Sandia Corporation Uncooled thin film pyroelectric IR detector with aerogel thermal isolation
US6552841B1 (en) 2000-01-07 2003-04-22 Imperium Advanced Ultrasonic Imaging Ultrasonic imager
DE10034085C2 (de) * 2000-07-13 2002-05-08 Infineon Technologies Ag Verfahren zur Erzeugung analog zueinander aufgebauter Chips, die jeweils ein erstes Halbleiterbauelement, das eine Schicht mit einer definierten elektrischen Polarisation aufweist, aufweisen
EP1178545A1 (de) * 2000-08-04 2002-02-06 Ecole Polytechnique Federale De Lausanne Herstellung eines pyroelektrischen Sensors mit einer pyroelektrischen Dünnschicht die polarisiert werden muss
US7955483B2 (en) * 2002-03-18 2011-06-07 Honeywell International Inc. Carbon nanotube-based glucose sensor
US6919730B2 (en) * 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US8641620B2 (en) * 2008-02-21 2014-02-04 Imperium, Inc. Hand-held ultrasound imaging device and techniques
CN102564601A (zh) * 2010-12-22 2012-07-11 精工爱普生株式会社 热式光检测装置、电子设备、热式光检测器及其制造方法
JP2013221906A (ja) * 2012-04-19 2013-10-28 Seiko Epson Corp センサーデバイス及び電子機器
CN104776921A (zh) * 2014-01-10 2015-07-15 国家电网公司 一种多点测温装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885301A (en) * 1971-04-08 1975-05-27 Kureha Chemical Ind Co Ltd Pyroelectric element of polymer film
US4024560A (en) * 1975-09-04 1977-05-17 Westinghouse Electric Corporation Pyroelectric-field effect electromagnetic radiation detector
GB2200246B (en) * 1985-09-12 1989-11-01 Plessey Co Plc Thermal detector array
DD275801A3 (de) * 1988-02-15 1990-02-07 Akad Wissenschaften Ddr Verfahren und einrichtung zur messung der energie von strahlungsimpulsen mit pyroelektrischen strahlungsempfaengern
JPH0291525A (ja) * 1988-09-29 1990-03-30 Matsushita Electric Ind Co Ltd 焦電型赤外線固体撮像装置
FR2649247B1 (fr) * 1989-06-30 1991-09-13 Thomson Csf Detecteur infrarouge a base de materiau pyroelectrique

Also Published As

Publication number Publication date
EP0491596B1 (de) 1997-08-06
US5283438A (en) 1994-02-01
FR2670325A1 (fr) 1992-06-12
EP0491596A1 (de) 1992-06-24
DE69127176D1 (de) 1997-09-11
FR2670325B1 (fr) 1993-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee