DE69119042T2 - Integrierte Schaltungspackung mit eingekapselter Batteriezelle - Google Patents

Integrierte Schaltungspackung mit eingekapselter Batteriezelle

Info

Publication number
DE69119042T2
DE69119042T2 DE69119042T DE69119042T DE69119042T2 DE 69119042 T2 DE69119042 T2 DE 69119042T2 DE 69119042 T DE69119042 T DE 69119042T DE 69119042 T DE69119042 T DE 69119042T DE 69119042 T2 DE69119042 T2 DE 69119042T2
Authority
DE
Germany
Prior art keywords
integrated circuit
battery cell
circuit pack
encapsulated battery
encapsulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119042T
Other languages
English (en)
Other versions
DE69119042D1 (de
Inventor
Michael J Hundt
Krishnan Kelappan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/617,500 external-priority patent/US5124782A/en
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE69119042D1 publication Critical patent/DE69119042D1/de
Publication of DE69119042T2 publication Critical patent/DE69119042T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141Battery and back-up supplies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49593Battery in combination with a leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
DE69119042T 1990-11-21 1991-11-18 Integrierte Schaltungspackung mit eingekapselter Batteriezelle Expired - Fee Related DE69119042T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/617,500 US5124782A (en) 1990-01-26 1990-11-21 Integrated circuit package with molded cell

Publications (2)

Publication Number Publication Date
DE69119042D1 DE69119042D1 (de) 1996-05-30
DE69119042T2 true DE69119042T2 (de) 1996-08-29

Family

ID=24473886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119042T Expired - Fee Related DE69119042T2 (de) 1990-11-21 1991-11-18 Integrierte Schaltungspackung mit eingekapselter Batteriezelle

Country Status (4)

Country Link
EP (1) EP0490499B1 (de)
JP (1) JPH04287357A (de)
KR (1) KR920010845A (de)
DE (1) DE69119042T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677566A (en) * 1995-05-08 1997-10-14 Micron Technology, Inc. Semiconductor chip package
US5841724A (en) * 1997-06-12 1998-11-24 Enable Semiconductor, Inc. Voltage source and memory-voltage switch in a memory chip
JP5505712B2 (ja) * 2010-04-02 2014-05-28 株式会社ジェイテクト 制御装置およびこれを備える電動パワーステアリング装置
KR102065943B1 (ko) * 2015-04-17 2020-01-14 삼성전자주식회사 팬-아웃 반도체 패키지 및 그 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109183A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Non-volatile memory
US5124782A (en) * 1990-01-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5008776A (en) * 1990-06-06 1991-04-16 Sgs-Thomson Microelectronics, Inc. Zero power IC module

Also Published As

Publication number Publication date
KR920010845A (ko) 1992-06-27
JPH04287357A (ja) 1992-10-12
EP0490499A1 (de) 1992-06-17
EP0490499B1 (de) 1996-04-24
DE69119042D1 (de) 1996-05-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee