DE69027099D1 - Positive working photoresist composition - Google Patents

Positive working photoresist composition

Info

Publication number
DE69027099D1
DE69027099D1 DE69027099T DE69027099T DE69027099D1 DE 69027099 D1 DE69027099 D1 DE 69027099D1 DE 69027099 T DE69027099 T DE 69027099T DE 69027099 T DE69027099 T DE 69027099T DE 69027099 D1 DE69027099 D1 DE 69027099D1
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027099T
Other languages
German (de)
Other versions
DE69027099T2 (en
Inventor
Masayuki Oie
Shoji Kawata
Yakamasa Yamada
Shinya Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
Original Assignee
Nippon Zeon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Zeon Co Ltd filed Critical Nippon Zeon Co Ltd
Publication of DE69027099D1 publication Critical patent/DE69027099D1/en
Application granted granted Critical
Publication of DE69027099T2 publication Critical patent/DE69027099T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69027099T 1989-11-17 1990-11-09 Positive working photoresist composition Expired - Fee Related DE69027099T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1298857A JP2571136B2 (en) 1989-11-17 1989-11-17 Positive resist composition

Publications (2)

Publication Number Publication Date
DE69027099D1 true DE69027099D1 (en) 1996-06-27
DE69027099T2 DE69027099T2 (en) 1996-10-02

Family

ID=17865093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027099T Expired - Fee Related DE69027099T2 (en) 1989-11-17 1990-11-09 Positive working photoresist composition

Country Status (4)

Country Link
US (2) US5306596A (en)
EP (1) EP0430477B1 (en)
JP (1) JP2571136B2 (en)
DE (1) DE69027099T2 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01303125A (en) * 1988-06-01 1989-12-07 Suzuken:Kk Method for measuring pessimistic blood blood pressure
JP2571136B2 (en) * 1989-11-17 1997-01-16 日本ゼオン株式会社 Positive resist composition
JP2927014B2 (en) * 1990-02-20 1999-07-28 ジェイエスアール株式会社 Radiation-sensitive resin composition
KR0184870B1 (en) * 1990-02-20 1999-04-01 아사구라 다기오 Radiation-sensitive resin composition
JP2813033B2 (en) * 1990-05-25 1998-10-22 東京応化工業株式会社 Positive photosensitive resin composition
JPH0460548A (en) * 1990-06-29 1992-02-26 Fuji Photo Film Co Ltd Pattern forming composition and fine pattern forming method
JPH04284454A (en) * 1991-03-14 1992-10-09 Sumitomo Chem Co Ltd Positive photoresist composition
JPH04328555A (en) * 1991-04-26 1992-11-17 Fuji Photo Film Co Ltd Positive photoresist composition
US5362597A (en) * 1991-05-30 1994-11-08 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
WO1993018438A1 (en) * 1992-03-06 1993-09-16 Hoechst Celanese Corporation Positive photoresist composition
US5384228A (en) * 1992-04-14 1995-01-24 Tokyo Ohka Kogyo Co., Ltd. Alkali-developable positive-working photosensitive resin composition
US5401605A (en) * 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
US5609982A (en) * 1993-12-17 1997-03-11 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JPH07199455A (en) * 1993-12-28 1995-08-04 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition
JP3503839B2 (en) 1994-05-25 2004-03-08 富士写真フイルム株式会社 Positive photosensitive composition
TW421731B (en) * 1994-10-24 2001-02-11 Clariant Finance Bvi Ltd Positive photoresist composition, photo-sensitive element comprising it, methods of using it, and photosensitizer therein
JP3278306B2 (en) 1994-10-31 2002-04-30 富士写真フイルム株式会社 Positive photoresist composition
US5672459A (en) * 1995-03-31 1997-09-30 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition containing quinone diazide ester having two hindered phenol groups
US5514515A (en) * 1995-05-24 1996-05-07 Shipley Company, L.L.C. Photoactive compounds having a heterocyclic group used in photoresist compositions
US5618932A (en) * 1995-05-24 1997-04-08 Shipley Company, L.L.C. Photoactive compounds and compositions
JP3473931B2 (en) * 1996-11-11 2003-12-08 東京応化工業株式会社 Positive photosensitive composition for lift-off and pattern forming method
US5726296A (en) * 1997-03-07 1998-03-10 Hoechst Celanese Corp. Process for preparing photoactive coumarin derivatives
US5866295A (en) * 1997-03-07 1999-02-02 Clariant Finance (Bvi) Limited Photosensitive quinolone compounds and a process of preparation
US5773591A (en) * 1997-03-07 1998-06-30 Hoechst Celanese Corp. Process for preparing coumarin sulfonates
US5876897A (en) * 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
US5726295A (en) * 1997-03-07 1998-03-10 Hoechst Celanese Corp. Photoactive coumarin derivatives
US5739295A (en) * 1997-03-07 1998-04-14 Hoechst Celanese Corporation Photoactive coumarin sulfonate compounds
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6368421B1 (en) 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
JP2000347397A (en) 1999-06-04 2000-12-15 Jsr Corp Radiation sensitive resin composition and its use for interlayer dielectric
JP4179579B2 (en) 2000-05-08 2008-11-12 東洋合成工業株式会社 Method for producing 1,2-naphthoquinonediazide photosensitizer
US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
US8563215B2 (en) * 2007-03-23 2013-10-22 Council Of Scientific & Industrial Research Diazonaphthoquinonesulfonic acid bisphenol derivative useful in photo lithographic sub micron patterning and a process for preparation thereof
KR101799396B1 (en) * 2010-05-18 2017-11-21 삼성디스플레이 주식회사 Photoresist composition and method of forming pattern using the same
CN104926612A (en) * 2015-05-03 2015-09-23 上虞日月星科技化学有限公司 Preparation method of tris(resorcinol)methane

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130248C (en) * 1959-01-21
CH621416A5 (en) * 1975-03-27 1981-01-30 Hoechst Ag
JPS61185741A (en) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPH0654384B2 (en) * 1985-08-09 1994-07-20 東京応化工業株式会社 Positive photoresist composition
JPH0654388B2 (en) * 1986-05-02 1994-07-20 東京応化工業株式会社 Positive photoresist composition
JPS63178228A (en) * 1987-01-20 1988-07-22 Fuji Photo Film Co Ltd Positive type photoresist composition
JP2552891B2 (en) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 Positive photoresist composition
JPH063544B2 (en) * 1988-07-07 1994-01-12 住友化学工業株式会社 Positive type radiation sensitive resist composition
JP2571136B2 (en) * 1989-11-17 1997-01-16 日本ゼオン株式会社 Positive resist composition

Also Published As

Publication number Publication date
US5306596A (en) 1994-04-26
JP2571136B2 (en) 1997-01-16
EP0430477A1 (en) 1991-06-05
US5532107A (en) 1996-07-02
EP0430477B1 (en) 1996-05-22
JPH03158856A (en) 1991-07-08
DE69027099T2 (en) 1996-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee