DE69009196D1 - EEPROM, its erase gate electrode pattern, the source region pattern, and methods of manufacturing the same. - Google Patents
EEPROM, its erase gate electrode pattern, the source region pattern, and methods of manufacturing the same.Info
- Publication number
- DE69009196D1 DE69009196D1 DE69009196T DE69009196T DE69009196D1 DE 69009196 D1 DE69009196 D1 DE 69009196D1 DE 69009196 T DE69009196 T DE 69009196T DE 69009196 T DE69009196 T DE 69009196T DE 69009196 D1 DE69009196 D1 DE 69009196D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- eeprom
- manufacturing
- methods
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1007433A JP2515009B2 (en) | 1989-01-13 | 1989-01-13 | Manufacturing method of nonvolatile semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69009196D1 true DE69009196D1 (en) | 1994-07-07 |
DE69009196T2 DE69009196T2 (en) | 1994-10-27 |
Family
ID=11665733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69009196T Expired - Fee Related DE69009196T2 (en) | 1989-01-13 | 1990-01-12 | EEPROM, its erase gate electrode pattern, the source region pattern, and methods of manufacturing the same. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5364805A (en) |
EP (1) | EP0378227B1 (en) |
JP (1) | JP2515009B2 (en) |
KR (1) | KR920009056B1 (en) |
DE (1) | DE69009196T2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343063A (en) * | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5512505A (en) * | 1990-12-18 | 1996-04-30 | Sandisk Corporation | Method of making dense vertical programmable read only memory cell structure |
JP3104319B2 (en) * | 1991-08-29 | 2000-10-30 | ソニー株式会社 | Non-volatile storage device |
JP3404064B2 (en) * | 1993-03-09 | 2003-05-06 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
KR970003845B1 (en) * | 1993-10-28 | 1997-03-22 | 금성일렉트론 주식회사 | Eeprom flash memory cell, memory device and manufacturing method thereof |
KR100215883B1 (en) * | 1996-09-02 | 1999-08-16 | 구본준 | A flash memory device and manufacturing method thereof |
KR19980033279A (en) * | 1996-10-29 | 1998-07-25 | 윌리엄비.켐플러 | Improved erasable programmable read-only memory and method of manufacturing the same |
WO2011145738A1 (en) | 2010-05-20 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving semiconductor device |
JP6901831B2 (en) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | Memory system and information processing system |
WO2017068478A1 (en) | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
US20240162314A1 (en) * | 2022-11-11 | 2024-05-16 | Nxp B.V. | Multi-time programmable memory cell and method therefor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258466A (en) * | 1978-11-02 | 1981-03-31 | Texas Instruments Incorporated | High density electrically programmable ROM |
JPS55156370A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
US4257826A (en) * | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
JPS5743470A (en) * | 1980-08-29 | 1982-03-11 | Fujitsu Ltd | Semiconductor device |
DE3175125D1 (en) * | 1980-11-20 | 1986-09-18 | Toshiba Kk | Semiconductor memory device and method for manufacturing the same |
DE3171836D1 (en) * | 1980-12-08 | 1985-09-19 | Toshiba Kk | Semiconductor memory device |
DE3174417D1 (en) * | 1980-12-08 | 1986-05-22 | Toshiba Kk | Semiconductor memory device |
JPS6130063A (en) * | 1984-07-23 | 1986-02-12 | Nec Corp | Nonvolatile semiconductor memory device |
DE3670403D1 (en) * | 1986-07-18 | 1990-05-17 | Nippon Denso Co | METHOD FOR PRODUCING A NON-VOLATILE SEMICONDUCTOR STORAGE ARRANGEMENT WITH POSSIBILITY TO INSERT AND ERASE. |
JP2607504B2 (en) * | 1987-02-20 | 1997-05-07 | 株式会社東芝 | Non-volatile semiconductor memory |
JPH0640588B2 (en) * | 1987-03-13 | 1994-05-25 | 株式会社東芝 | Semiconductor memory device |
US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
JP2511495B2 (en) * | 1988-05-23 | 1996-06-26 | 沖電気工業株式会社 | Nonvolatile semiconductor memory device |
US5219533A (en) * | 1991-11-18 | 1993-06-15 | General Electric Company | Apparatus for solvent extraction process |
-
1989
- 1989-01-13 JP JP1007433A patent/JP2515009B2/en not_active Expired - Fee Related
-
1990
- 1990-01-12 DE DE69009196T patent/DE69009196T2/en not_active Expired - Fee Related
- 1990-01-12 KR KR1019900000356A patent/KR920009056B1/en not_active IP Right Cessation
- 1990-01-12 EP EP90100595A patent/EP0378227B1/en not_active Expired - Lifetime
-
1991
- 1991-07-08 US US07/726,881 patent/US5364805A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0378227A1 (en) | 1990-07-18 |
JP2515009B2 (en) | 1996-07-10 |
KR900012281A (en) | 1990-08-03 |
KR920009056B1 (en) | 1992-10-13 |
US5364805A (en) | 1994-11-15 |
EP0378227B1 (en) | 1994-06-01 |
JPH02187070A (en) | 1990-07-23 |
DE69009196T2 (en) | 1994-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |