DE69007764D1 - Packungsmaterial für umgekehrte Phasechromatographie und Verfahren zu dessen Herstellung. - Google Patents
Packungsmaterial für umgekehrte Phasechromatographie und Verfahren zu dessen Herstellung.Info
- Publication number
- DE69007764D1 DE69007764D1 DE90124637T DE69007764T DE69007764D1 DE 69007764 D1 DE69007764 D1 DE 69007764D1 DE 90124637 T DE90124637 T DE 90124637T DE 69007764 T DE69007764 T DE 69007764T DE 69007764 D1 DE69007764 D1 DE 69007764D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- reverse phase
- packing material
- phase chromatography
- chromatography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/281—Sorbents specially adapted for preparative, analytical or investigative chromatography
- B01J20/286—Phases chemically bonded to a substrate, e.g. to silica or to polymers
- B01J20/287—Non-polar phases; Reversed phases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
- B01D15/08—Selective adsorption, e.g. chromatography
- B01D15/26—Selective adsorption, e.g. chromatography characterised by the separation mechanism
- B01D15/32—Bonded phase chromatography
- B01D15/325—Reversed phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/281—Sorbents specially adapted for preparative, analytical or investigative chromatography
- B01J20/286—Phases chemically bonded to a substrate, e.g. to silica or to polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/30—Processes for preparing, regenerating, or reactivating
- B01J20/32—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating
- B01J20/3202—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating characterised by the carrier, support or substrate used for impregnation or coating
- B01J20/3204—Inorganic carriers, supports or substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/30—Processes for preparing, regenerating, or reactivating
- B01J20/32—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating
- B01J20/3231—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating characterised by the coating or impregnating layer
- B01J20/3242—Layers with a functional group, e.g. an affinity material, a ligand, a reactant or a complexing group
- B01J20/3268—Macromolecular compounds
- B01J20/3272—Polymers obtained by reactions otherwise than involving only carbon to carbon unsaturated bonds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2220/00—Aspects relating to sorbent materials
- B01J2220/50—Aspects relating to the use of sorbent or filter aid materials
- B01J2220/54—Sorbents specially adapted for analytical or investigative chromatography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
- Y10T428/2995—Silane, siloxane or silicone coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31609—Particulate metal or metal compound-containing
- Y10T428/31612—As silicone, silane or siloxane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32617289 | 1989-12-18 | ||
JP18728290A JP2874297B2 (ja) | 1989-12-18 | 1990-07-17 | 逆相クロマトグラフィー用充填剤及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69007764D1 true DE69007764D1 (de) | 1994-05-05 |
DE69007764T2 DE69007764T2 (de) | 1994-11-24 |
Family
ID=26504254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69007764T Expired - Fee Related DE69007764T2 (de) | 1989-12-18 | 1990-12-18 | Packungsmaterial für umgekehrte Phasechromatographie und Verfahren zu dessen Herstellung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5194333A (de) |
EP (1) | EP0436179B1 (de) |
JP (1) | JP2874297B2 (de) |
DE (1) | DE69007764T2 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5653875A (en) * | 1994-02-04 | 1997-08-05 | Supelco, Inc. | Nucleophilic bodies bonded to siloxane and use thereof for separations from sample matrices |
WO1995027680A1 (fr) * | 1994-04-11 | 1995-10-19 | Ube Nitto Kasei Co., Ltd. | Particules fines de silices a enrobage de resine reticule et leur procede de production |
DE19531173A1 (de) * | 1995-08-24 | 1997-02-27 | Boehringer Mannheim Gmbh | Verfahren zum Stabilisieren des Gehalts glykierten Proteins einer Probe auf einem Matrixmaterial |
US5667674A (en) * | 1996-01-11 | 1997-09-16 | Minnesota Mining And Manufacturing Company | Adsorption medium and method of preparing same |
DE19648798C2 (de) * | 1996-11-26 | 1998-11-19 | Hoechst Ag | Verfahren zur Herstellung von organisch modifizierten Aerogelen durch Oberflächenmodifikation des wäßrigen Gels (ohne vorherigen Lösungsmitteltausch) und anschließender Trocknung |
US5993653C1 (en) * | 1997-08-11 | 2001-11-06 | Phenomenex | Composition and column used in hplc |
WO1999064504A1 (de) * | 1998-06-05 | 1999-12-16 | Cabot Corporation | Nanoporöse interpenetrierende organisch-anorganische netzwerke |
US6686035B2 (en) | 1999-02-05 | 2004-02-03 | Waters Investments Limited | Porous inorganic/organic hybrid particles for chromatographic separations and process for their preparation |
US6303047B1 (en) * | 1999-03-22 | 2001-10-16 | Lsi Logic Corporation | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same |
US6524974B1 (en) | 1999-03-22 | 2003-02-25 | Lsi Logic Corporation | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidizing agent in the presence of one or more reaction retardants |
US6204192B1 (en) | 1999-03-29 | 2001-03-20 | Lsi Logic Corporation | Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures |
AU5157900A (en) * | 1999-05-25 | 2000-12-12 | Dcv, Inc. | Silica-based, endcapped chromatographic packing having improved stability under high ph conditions |
US6232658B1 (en) | 1999-06-30 | 2001-05-15 | Lsi Logic Corporation | Process to prevent stress cracking of dielectric films on semiconductor wafers |
US6114259A (en) * | 1999-07-27 | 2000-09-05 | Lsi Logic Corporation | Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage |
US6756674B1 (en) | 1999-10-22 | 2004-06-29 | Lsi Logic Corporation | Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same |
US6423628B1 (en) | 1999-10-22 | 2002-07-23 | Lsi Logic Corporation | Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines |
US6391795B1 (en) * | 1999-10-22 | 2002-05-21 | Lsi Logic Corporation | Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning |
US6316354B1 (en) | 1999-10-26 | 2001-11-13 | Lsi Logic Corporation | Process for removing resist mask of integrated circuit structure which mitigates damage to underlying low dielectric constant silicon oxide dielectric layer |
US6147012A (en) * | 1999-11-12 | 2000-11-14 | Lsi Logic Corporation | Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant |
US6346490B1 (en) | 2000-04-05 | 2002-02-12 | Lsi Logic Corporation | Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps |
US6506678B1 (en) | 2000-05-19 | 2003-01-14 | Lsi Logic Corporation | Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same |
US6426286B1 (en) | 2000-05-19 | 2002-07-30 | Lsi Logic Corporation | Interconnection system with lateral barrier layer |
US6492731B1 (en) | 2000-06-27 | 2002-12-10 | Lsi Logic Corporation | Composite low dielectric constant film for integrated circuit structure |
US6346488B1 (en) | 2000-06-27 | 2002-02-12 | Lsi Logic Corporation | Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation with hydrogen ions |
US6368979B1 (en) | 2000-06-28 | 2002-04-09 | Lsi Logic Corporation | Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure |
US6350700B1 (en) | 2000-06-28 | 2002-02-26 | Lsi Logic Corporation | Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure |
US6489242B1 (en) | 2000-09-13 | 2002-12-03 | Lsi Logic Corporation | Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures |
US6391768B1 (en) | 2000-10-30 | 2002-05-21 | Lsi Logic Corporation | Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure |
US6537923B1 (en) | 2000-10-31 | 2003-03-25 | Lsi Logic Corporation | Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines |
US6423630B1 (en) | 2000-10-31 | 2002-07-23 | Lsi Logic Corporation | Process for forming low K dielectric material between metal lines |
US6420277B1 (en) | 2000-11-01 | 2002-07-16 | Lsi Logic Corporation | Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure |
US6528167B2 (en) | 2001-01-31 | 2003-03-04 | Waters Investments Limited | Porous hybrid particles with organic groups removed from the surface |
US6649219B2 (en) | 2001-02-23 | 2003-11-18 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation |
US6572925B2 (en) | 2001-02-23 | 2003-06-03 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material |
US6858195B2 (en) | 2001-02-23 | 2005-02-22 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material |
US6794044B2 (en) * | 2001-03-02 | 2004-09-21 | Selerity Technologies, Inc. | Chromatographic packing materials and methods of making and using such packing materials |
US6503840B2 (en) | 2001-05-02 | 2003-01-07 | Lsi Logic Corporation | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning |
US6559048B1 (en) | 2001-05-30 | 2003-05-06 | Lsi Logic Corporation | Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning |
US6583026B1 (en) | 2001-05-31 | 2003-06-24 | Lsi Logic Corporation | Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure |
US6562700B1 (en) | 2001-05-31 | 2003-05-13 | Lsi Logic Corporation | Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal |
US6566171B1 (en) | 2001-06-12 | 2003-05-20 | Lsi Logic Corporation | Fuse construction for integrated circuit structure having low dielectric constant dielectric material |
US6930056B1 (en) * | 2001-06-19 | 2005-08-16 | Lsi Logic Corporation | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure |
US6559033B1 (en) | 2001-06-27 | 2003-05-06 | Lsi Logic Corporation | Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines |
US6673721B1 (en) | 2001-07-02 | 2004-01-06 | Lsi Logic Corporation | Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask |
WO2003014450A1 (en) | 2001-08-09 | 2003-02-20 | Waters Investments Limited | Porous inorganic/organic hybrid monolith materials for chromatographic separations and process for their preparation |
US6723653B1 (en) | 2001-08-17 | 2004-04-20 | Lsi Logic Corporation | Process for reducing defects in copper-filled vias and/or trenches formed in porous low-k dielectric material |
US6881664B2 (en) * | 2001-08-28 | 2005-04-19 | Lsi Logic Corporation | Process for planarizing upper surface of damascene wiring structure for integrated circuit structures |
US6528423B1 (en) | 2001-10-26 | 2003-03-04 | Lsi Logic Corporation | Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric material |
US6613665B1 (en) | 2001-10-26 | 2003-09-02 | Lsi Logic Corporation | Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface |
WO2004041398A2 (en) * | 2002-10-30 | 2004-05-21 | Waters Investments Limited | Porous inorganic/organic hybrid materials and preparation thereof |
WO2004058326A2 (en) * | 2002-12-20 | 2004-07-15 | Cardiac Inventions Unlimited, Inc. | Left ventricular pacing lead and implantation method |
US20040238744A1 (en) * | 2003-01-15 | 2004-12-02 | Stephen Arnold | Perturbation approach to resonance shift of whispering gallery modes in a dielectric microsphere as a probe of a surrounding medium |
US20070017870A1 (en) | 2003-09-30 | 2007-01-25 | Belov Yuri P | Multicapillary device for sample preparation |
US7166212B2 (en) * | 2003-09-30 | 2007-01-23 | Chromba, Inc. | Multicapillary column for chromatography and sample preparation |
US10773186B2 (en) | 2004-07-30 | 2020-09-15 | Waters Technologies Corporation | Porous inorganic/organic hybrid materials with ordered domains for chromatographic separations and processes for their preparation |
US8658277B2 (en) | 2004-07-30 | 2014-02-25 | Waters Technologies Corporation | Porous inorganic/organic hybrid materials with ordered domains for chromatographic separations and processes for their preparation |
US20090206034A1 (en) * | 2006-03-29 | 2009-08-20 | Osakazu Nakajima | Modified silica gel and use thereof |
US8480889B2 (en) * | 2006-04-27 | 2013-07-09 | Agilent Technologies, Inc. | Chromatographic stationary phase |
WO2008085435A1 (en) | 2007-01-12 | 2008-07-17 | Waters Investments Limited | Porous carbon-heteroatom-silicon hybrid inorganic/organic materials for chromatographic separations and process for the preparation thereof |
WO2009121034A2 (en) * | 2008-03-28 | 2009-10-01 | Pelican Group Holdings, Inc. | Multicapillary sample preparation devices and methods for processing analytes |
US11439977B2 (en) | 2009-06-01 | 2022-09-13 | Waters Technologies Corporation | Hybrid material for chromatographic separations comprising a superficially porous core and a surrounding material |
JP6151021B2 (ja) | 2009-06-01 | 2017-06-21 | ウオーターズ・テクノロジーズ・コーポレイシヨン | クロマトグラフ分離用ハイブリッド材料 |
WO2012018598A1 (en) | 2010-07-26 | 2012-02-09 | Waters Technologies Corporation | Superficially porous materials comprising a substantially nonporous core having narrow particle size distribution; process for the preparation thereof; and use thereof for chromatographic separations |
CN109414681A (zh) | 2016-03-06 | 2019-03-01 | 沃特世科技公司 | 用于色谱分离的包含表面多孔芯和周围材料的杂化材料 |
CN117563558B (zh) * | 2024-01-17 | 2024-04-16 | 广州研创生物技术发展有限公司 | 一种改性多孔球型硅胶及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2426698A1 (de) * | 1974-06-01 | 1975-12-11 | Merck Patent Gmbh | Verfahren zur herstellung von silanisierten traegermaterialien |
JPS5383680A (en) * | 1976-12-29 | 1978-07-24 | Toray Silicone Co | Filler for gas separation column |
GB2039787B (en) * | 1978-11-13 | 1982-12-08 | Res Inst For Special Inorganic | Producing corrosion resistant articles |
JPS6046131B2 (ja) * | 1980-11-11 | 1985-10-14 | 宇部興産株式会社 | ポリカルボシランの製造法 |
US4782040A (en) * | 1984-04-09 | 1988-11-01 | Dow Corning Corporation | Porous materials having a dual surface |
US4694092A (en) * | 1985-12-27 | 1987-09-15 | Chemicals Inspection & Testing Institute | Partially hydrophilicized silica gel and process for producing the same |
US4920152A (en) * | 1986-05-13 | 1990-04-24 | Purdue Research Foundation | Reversed-phase packing material and method |
US4705725A (en) * | 1986-11-28 | 1987-11-10 | E. I. Du Pont De Nemours And Company | Substrates with sterically-protected, stable, covalently-bonded organo-silane films |
US4933372A (en) * | 1988-09-26 | 1990-06-12 | Supelco, Inc. | Porous rigid resins and process of preparation |
-
1990
- 1990-07-17 JP JP18728290A patent/JP2874297B2/ja not_active Expired - Fee Related
- 1990-12-18 DE DE69007764T patent/DE69007764T2/de not_active Expired - Fee Related
- 1990-12-18 US US07/629,625 patent/US5194333A/en not_active Expired - Lifetime
- 1990-12-18 EP EP19900124637 patent/EP0436179B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5194333A (en) | 1993-03-16 |
EP0436179B1 (de) | 1994-03-30 |
EP0436179A1 (de) | 1991-07-10 |
JP2874297B2 (ja) | 1999-03-24 |
DE69007764T2 (de) | 1994-11-24 |
JPH03233354A (ja) | 1991-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |