DE69000129D1 - Integrierte schaltung mit vollstaendigem schutz gegen ultraviolettstrahlen. - Google Patents

Integrierte schaltung mit vollstaendigem schutz gegen ultraviolettstrahlen.

Info

Publication number
DE69000129D1
DE69000129D1 DE9090403570T DE69000129T DE69000129D1 DE 69000129 D1 DE69000129 D1 DE 69000129D1 DE 9090403570 T DE9090403570 T DE 9090403570T DE 69000129 T DE69000129 T DE 69000129T DE 69000129 D1 DE69000129 D1 DE 69000129D1
Authority
DE
Germany
Prior art keywords
integrated circuit
ultraviolet rays
protection against
against ultraviolet
full protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090403570T
Other languages
English (en)
Other versions
DE69000129T2 (de
Inventor
Franck Edme
Olivier Adjemian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69000129D1 publication Critical patent/DE69000129D1/de
Application granted granted Critical
Publication of DE69000129T2 publication Critical patent/DE69000129T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE9090403570T 1989-12-16 1990-12-13 Integrierte schaltung mit vollstaendigem schutz gegen ultraviolettstrahlen. Expired - Lifetime DE69000129T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8916649A FR2656156A1 (fr) 1989-12-16 1989-12-16 Circuit integre entierement protege des rayons ultra-violets.

Publications (2)

Publication Number Publication Date
DE69000129D1 true DE69000129D1 (de) 1992-07-09
DE69000129T2 DE69000129T2 (de) 1992-12-17

Family

ID=9388578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090403570T Expired - Lifetime DE69000129T2 (de) 1989-12-16 1990-12-13 Integrierte schaltung mit vollstaendigem schutz gegen ultraviolettstrahlen.

Country Status (4)

Country Link
US (1) US5235541A (de)
EP (1) EP0433174B1 (de)
DE (1) DE69000129T2 (de)
FR (1) FR2656156A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243581A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 不揮発性メモリ装置
EP0576773B1 (de) * 1992-06-30 1995-09-13 STMicroelectronics S.r.l. Integrierte Schaltung mit vollständigem Schutz gegen Ultraviolettstrahlen
AT401656B (de) * 1994-11-07 1996-11-25 Chemiefaser Lenzing Ag Flammfestes nicht gewebtes textiles gebilde
KR970054309A (ko) * 1995-12-29 1997-07-31 김주용 불 휘발성 반도체 메모리장치
US5719427A (en) * 1997-01-14 1998-02-17 Pericom Semiconductor Corp. Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures
GB2341272B (en) 1998-09-03 2003-08-20 Ericsson Telefon Ab L M High voltage shield
US7339835B1 (en) * 2005-02-14 2008-03-04 National Semiconductor Corporation Non-volatile memory structure and erase method with floating gate voltage control
US7923071B2 (en) * 2005-02-15 2011-04-12 Rpo Pty Limited Photolithographic patterning of polymeric materials
US9406621B2 (en) 2010-06-10 2016-08-02 Texas Instruments Incorporated Ultraviolet energy shield for non-volatile charge storage memory
CN102314036A (zh) * 2010-06-29 2012-01-11 普诚科技股份有限公司 抗紫外光的电子装置及其制法
CN114054925A (zh) * 2021-11-10 2022-02-18 合肥维信诺科技有限公司 一种掩膜板的制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
US4530074A (en) * 1982-06-17 1985-07-16 Intel Corporation Radiation shield for a portion of a radiation sensitive integrated circuit
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
JPS596581A (ja) * 1982-07-02 1984-01-13 Mitsubishi Electric Corp 半導体不揮発性記憶装置
US4577295A (en) * 1983-05-31 1986-03-18 Intel Corporation Hybrid E2 cell and related array
US4805138A (en) * 1985-08-23 1989-02-14 Texas Instruments Incorporated An unerasable eprom cell
JPS62143476A (ja) * 1985-12-18 1987-06-26 Fujitsu Ltd 半導体記憶装置
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM
US4758869A (en) * 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
US5086410A (en) * 1990-09-14 1992-02-04 National Semiconductor Corporation Non-erasable eprom cell for redundancy circuit
US5050123A (en) * 1990-11-13 1991-09-17 Intel Corporation Radiation shield for EPROM cells

Also Published As

Publication number Publication date
EP0433174A1 (de) 1991-06-19
EP0433174B1 (de) 1992-06-03
FR2656156A1 (fr) 1991-06-21
DE69000129T2 (de) 1992-12-17
US5235541A (en) 1993-08-10

Similar Documents

Publication Publication Date Title
DE69427914D1 (de) Gegen äussere eingriffe gesicherte integrierte schaltungsanordnung
DE68924636D1 (de) Schutzschaltung gegen zeitweilig wirkende Effekte.
FI921326A (fi) Vattendispersion av sjaelvledande polyalkoxitiofener, foerfarande foer dess framstaellning och dess anvaendning
FI911435A0 (fi) Antennstav och foerfarande foer dess framstaellning.
FI912327A (fi) Soetningsmedelskomposition av klordeoxisocker och dess anvaendning.
DE69229013D1 (de) Polymerherstellung
DE69204829D1 (de) Integrierte Schaltung mit vollständigem Schutz gegen Ultraviolettstrahlen.
DE69211062D1 (de) Polymerherstellung
DE69000129D1 (de) Integrierte schaltung mit vollstaendigem schutz gegen ultraviolettstrahlen.
DE59508413D1 (de) Integrierte Schaltung mit Schutzstruktur
DE69016757D1 (de) Strahlenschutzaufbau.
DE3689194D1 (de) Gegen Ultraviolettstrahlung stabilisierte Polyphenylenoxidharze.
DE68927166D1 (de) Ultraviolettstrahlenschutzrohr
FI910282A0 (fi) C-alkyleringsprocess av hydrokinon och dess monoetrar.
FI912585A (fi) Cellenhet foer odling av plantor och foerfarande foer dess framstaellning.
FI921408A (fi) Foerfarande foer skjutning av en borrstaong in i ett utslagshaol av en schaktugn, borrmaskin och duppelriktad klaemma
FI904767A (fi) Anordning foer oeverfoering av en planta.
FI893132A0 (fi) Ultraviolett straolning absorberande cyklohexenylidenkompositioner.
DE68908146D1 (de) Schutzstoff gegen strahleneffekte.
FI920481A (fi) Transportfoerpackning och foerfarande foer dess framstaellning.
KR950008933U (ko) 자외선 차단층을 가진 유리
KR940023244U (ko) 호환성 있는 고정틀을 이용하여 만들어진 레티클 보호막
FI914941A0 (fi) Transparent takkonstruktion.
FI914940A0 (fi) Transparent byggnadselement.
KR910014670U (ko) 집적회로 보호캡

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee