DE68929268T2 - Herstellungsprozess für bipolare Sinkerstruktur - Google Patents
Herstellungsprozess für bipolare SinkerstrukturInfo
- Publication number
- DE68929268T2 DE68929268T2 DE68929268T DE68929268T DE68929268T2 DE 68929268 T2 DE68929268 T2 DE 68929268T2 DE 68929268 T DE68929268 T DE 68929268T DE 68929268 T DE68929268 T DE 68929268T DE 68929268 T2 DE68929268 T2 DE 68929268T2
- Authority
- DE
- Germany
- Prior art keywords
- bipolar
- manufacturing process
- sinker structure
- sinker
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/291,185 US5001538A (en) | 1988-12-28 | 1988-12-28 | Bipolar sinker structure and process for forming same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68929268D1 DE68929268D1 (de) | 2001-01-04 |
DE68929268T2 true DE68929268T2 (de) | 2001-04-12 |
Family
ID=23119247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68929268T Expired - Fee Related DE68929268T2 (de) | 1988-12-28 | 1989-12-28 | Herstellungsprozess für bipolare Sinkerstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5001538A (de) |
EP (1) | EP0376722B1 (de) |
JP (1) | JPH02263442A (de) |
DE (1) | DE68929268T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614750A (en) * | 1995-06-29 | 1997-03-25 | Northern Telecom Limited | Buried layer contact for an integrated circuit structure |
US6703679B1 (en) | 1999-08-31 | 2004-03-09 | Analog Devices, Imi, Inc. | Low-resistivity microelectromechanical structures with co-fabricated integrated circuit |
US6818958B2 (en) * | 2001-04-13 | 2004-11-16 | International Rectifier Corporation | Semiconductor device and process for its manufacture to increase threshold voltage stability |
US6699765B1 (en) * | 2002-08-29 | 2004-03-02 | Micrel, Inc. | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
EP1696485A1 (de) | 2005-02-24 | 2006-08-30 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von Halbleiterbauelementen in einem SOI-Substrat mit Justiermarken |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047220A (en) * | 1975-12-24 | 1977-09-06 | General Electric Company | Bipolar transistor structure having low saturation resistance |
US4140558A (en) * | 1978-03-02 | 1979-02-20 | Bell Telephone Laboratories, Incorporated | Isolation of integrated circuits utilizing selective etching and diffusion |
US4691219A (en) * | 1980-07-08 | 1987-09-01 | International Business Machines Corporation | Self-aligned polysilicon base contact structure |
EP0068070A1 (de) * | 1981-07-01 | 1983-01-05 | Rockwell International Corporation | Komplementare NPN- und PNP-Lateraltransistoren, die zur minimalen Beeinflussung durch mit Substratoxyd gefüllte Rillen vom Substrat getrennt sind, und Verfahren zu ihrer Herstellung |
JPS5992548A (ja) * | 1982-11-18 | 1984-05-28 | Toshiba Corp | 半導体装置及びその製造方法 |
US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
US4595944A (en) * | 1983-12-29 | 1986-06-17 | International Business Machines Corporation | Resistor structure for transistor having polysilicon base contacts |
JPS61164262A (ja) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | 半導体装置 |
US4674173A (en) * | 1985-06-28 | 1987-06-23 | Texas Instruments Incorporated | Method for fabricating bipolar transistor |
US4808548A (en) * | 1985-09-18 | 1989-02-28 | Advanced Micro Devices, Inc. | Method of making bipolar and MOS devices on same integrated circuit substrate |
US4721682A (en) * | 1985-09-25 | 1988-01-26 | Monolithic Memories, Inc. | Isolation and substrate connection for a bipolar integrated circuit |
US4686763A (en) * | 1985-10-02 | 1987-08-18 | Advanced Micro Devices, Inc. | Method of making a planar polysilicon bipolar device |
EP0255973A2 (de) * | 1986-08-08 | 1988-02-17 | SILICONIX Incorporated | Kontakte von Halbleiterbauelementen gebildet auf einem minimalen Gebiet der Oberfläche |
US4868921A (en) * | 1986-09-05 | 1989-09-19 | General Electric Company | High voltage integrated circuit devices electrically isolated from an integrated circuit substrate |
GB8621534D0 (en) * | 1986-09-08 | 1986-10-15 | British Telecomm | Bipolar fabrication process |
US4745087A (en) * | 1987-01-13 | 1988-05-17 | Advanced Micro Devices, Inc. | Method of making fully self-aligned bipolar transistor involving a polysilicon collector contact formed in a slot with an oxide sidewall |
US4847670A (en) * | 1987-05-11 | 1989-07-11 | International Business Machines Corporation | High performance sidewall emitter transistor |
EP0316562A3 (de) * | 1987-11-19 | 1989-08-09 | Texas Instruments Incorporated | Halbleiterbipolartransistor mit Basis und Emitterstruktur in einem Graben und Verfahren zu seiner Herstellung |
US4839305A (en) * | 1988-06-28 | 1989-06-13 | Texas Instruments Incorporated | Method of making single polysilicon self-aligned transistor |
-
1988
- 1988-12-28 US US07/291,185 patent/US5001538A/en not_active Expired - Lifetime
-
1989
- 1989-12-27 JP JP1339869A patent/JPH02263442A/ja active Pending
- 1989-12-28 DE DE68929268T patent/DE68929268T2/de not_active Expired - Fee Related
- 1989-12-28 EP EP89313647A patent/EP0376722B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0376722A2 (de) | 1990-07-04 |
US5001538A (en) | 1991-03-19 |
JPH02263442A (ja) | 1990-10-26 |
EP0376722B1 (de) | 2000-11-29 |
EP0376722A3 (de) | 1990-10-17 |
DE68929268D1 (de) | 2001-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |