DE68922738D1 - Highly integrated semiconductor memory with multiple access. - Google Patents

Highly integrated semiconductor memory with multiple access.

Info

Publication number
DE68922738D1
DE68922738D1 DE68922738T DE68922738T DE68922738D1 DE 68922738 D1 DE68922738 D1 DE 68922738D1 DE 68922738 T DE68922738 T DE 68922738T DE 68922738 T DE68922738 T DE 68922738T DE 68922738 D1 DE68922738 D1 DE 68922738D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
multiple access
highly integrated
integrated semiconductor
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922738T
Other languages
German (de)
Other versions
DE68922738T2 (en
Inventor
Rainer Dipl Ing Clemen
Wolfdieter Loehlein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68922738D1 publication Critical patent/DE68922738D1/en
Application granted granted Critical
Publication of DE68922738T2 publication Critical patent/DE68922738T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
DE1989622738 1989-12-23 1989-12-23 Highly integrated semiconductor memory with multiple access. Expired - Fee Related DE68922738T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19890123873 EP0434852B1 (en) 1989-12-23 1989-12-23 Highly integrated multi-port semiconductor storage

Publications (2)

Publication Number Publication Date
DE68922738D1 true DE68922738D1 (en) 1995-06-22
DE68922738T2 DE68922738T2 (en) 1996-01-25

Family

ID=8202274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989622738 Expired - Fee Related DE68922738T2 (en) 1989-12-23 1989-12-23 Highly integrated semiconductor memory with multiple access.

Country Status (3)

Country Link
EP (1) EP0434852B1 (en)
JP (1) JPH03201293A (en)
DE (1) DE68922738T2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05151778A (en) * 1991-06-05 1993-06-18 Mitsubishi Electric Corp Static randum access memory and its control method
JP3169639B2 (en) * 1991-06-27 2001-05-28 日本電気株式会社 Semiconductor storage device
JPH0520865A (en) * 1991-07-16 1993-01-29 Mitsubishi Electric Corp Memory cell circuit, asynchronous serial access memory device and asynchronous random access memory device
DE69230366T2 (en) * 1992-02-06 2000-06-08 International Business Machines Corp., Armonk Multiport static random access memory with fast write-through scheme
DE69531092T2 (en) * 1994-12-22 2004-04-01 Cypress Semiconductor Corp., San Jose Single-sided simplex two-port memory cell
EP0718847B1 (en) * 1994-12-22 2003-06-25 Cypress Semiconductor Corporation Single ended dual port memory cell
KR100431478B1 (en) * 1995-07-27 2004-08-25 텍사스 인스트루먼츠 인코포레이티드 High Density Two Port Memory Cell
US6330182B1 (en) 1998-09-23 2001-12-11 Intel Corporation Method for evaluating soft error immunity of CMOS circuits
US6731566B1 (en) 1999-11-18 2004-05-04 Cypress Semiconductor Corporation Single ended simplex dual port memory cell
US6229754B1 (en) 2000-02-09 2001-05-08 International Business Machines Corporation Write through function for a memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560940A (en) * 1968-07-15 1971-02-02 Ibm Time shared interconnection apparatus
JPS60127598A (en) * 1983-12-14 1985-07-08 Toshiba Corp Semiconductor integrated circuit device
JPS60179992A (en) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> Memory circuit
JPH0640439B2 (en) * 1986-02-17 1994-05-25 日本電気株式会社 Semiconductor memory device
JPH01307091A (en) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp Multiport memory

Also Published As

Publication number Publication date
EP0434852B1 (en) 1995-05-17
EP0434852A1 (en) 1991-07-03
DE68922738T2 (en) 1996-01-25
JPH03201293A (en) 1991-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee