DE68919819D1 - Leitungssystem zur gasversorgung einer prozessanlage. - Google Patents

Leitungssystem zur gasversorgung einer prozessanlage.

Info

Publication number
DE68919819D1
DE68919819D1 DE68919819T DE68919819T DE68919819D1 DE 68919819 D1 DE68919819 D1 DE 68919819D1 DE 68919819 T DE68919819 T DE 68919819T DE 68919819 T DE68919819 T DE 68919819T DE 68919819 D1 DE68919819 D1 DE 68919819D1
Authority
DE
Germany
Prior art keywords
gas supply
piping
pipelines
piping system
process system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919819T
Other languages
English (en)
Other versions
DE68919819T2 (de
Inventor
Tadahiro Ohmi
Fumio Nakahara
Tuyosi Satoh
Masaru Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE68919819D1 publication Critical patent/DE68919819D1/de
Publication of DE68919819T2 publication Critical patent/DE68919819T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • B08B9/0325—Control mechanisms therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Pipeline Systems (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Drying Of Semiconductors (AREA)
DE68919819T 1988-07-08 1989-07-07 Leitungssystem zur gasversorgung einer prozessanlage. Expired - Fee Related DE68919819T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63171383A JPH0647073B2 (ja) 1988-07-08 1988-07-08 プロセス装置用ガス供給配管装置
PCT/JP1989/000690 WO1990000633A1 (en) 1988-07-08 1989-07-07 Gas supply pipeline system for process equipment

Publications (2)

Publication Number Publication Date
DE68919819D1 true DE68919819D1 (de) 1995-01-19
DE68919819T2 DE68919819T2 (de) 1995-05-04

Family

ID=15922160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919819T Expired - Fee Related DE68919819T2 (de) 1988-07-08 1989-07-07 Leitungssystem zur gasversorgung einer prozessanlage.

Country Status (5)

Country Link
EP (1) EP0379594B1 (de)
JP (1) JPH0647073B2 (de)
AT (1) ATE115195T1 (de)
DE (1) DE68919819T2 (de)
WO (1) WO1990000633A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2889752B2 (ja) * 1992-01-29 1999-05-10 株式会社東芝 ガス供給システムおよびガス供給装置
US5455014A (en) * 1993-07-20 1995-10-03 Hughes Aircraft Company Liquid deposition source gas delivery system
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US6436353B1 (en) 1997-06-13 2002-08-20 Tadahiro Ohmi Gas recovering apparatus
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
JP4606396B2 (ja) * 2006-09-15 2011-01-05 東京エレクトロン株式会社 処理ガス供給システム及び処理ガス供給方法
JP5436248B2 (ja) * 2010-02-03 2014-03-05 和三 長谷川 低圧空気供給システム
JP2012199511A (ja) * 2011-03-04 2012-10-18 Stanley Electric Co Ltd 気相成長装置及び気相成長方法
CN102853255A (zh) * 2012-08-29 2013-01-02 昆山书豪仪器科技有限公司 直读光谱供气系统
KR102260840B1 (ko) * 2020-02-25 2021-06-07 주식회사 케이씨 가스 공급 시스템

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH643469A5 (fr) 1981-12-22 1984-06-15 Siv Soc Italiana Vetro Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide.
JPH0442913Y2 (de) * 1984-11-30 1992-10-12
JPS6259133U (de) * 1985-10-02 1987-04-13
JPS63291895A (ja) * 1987-05-26 1988-11-29 Sumitomo Metal Ind Ltd 気相表面処理反応装置
JPH0682668A (ja) * 1992-09-04 1994-03-25 Canon Inc レンズ駆動装置及びカメラのレンズ移動装置

Also Published As

Publication number Publication date
ATE115195T1 (de) 1994-12-15
DE68919819T2 (de) 1995-05-04
EP0379594A1 (de) 1990-08-01
JPH0221618A (ja) 1990-01-24
EP0379594A4 (en) 1991-07-03
EP0379594B1 (de) 1994-12-07
WO1990000633A1 (en) 1990-01-25
JPH0647073B2 (ja) 1994-06-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee