DE68908638D1 - Unter Vakuum versiegeltes elektronisches Mikrobauteil, insbesondere Diode oder Triode, und dessen Herstellungsverfahren. - Google Patents

Unter Vakuum versiegeltes elektronisches Mikrobauteil, insbesondere Diode oder Triode, und dessen Herstellungsverfahren.

Info

Publication number
DE68908638D1
DE68908638D1 DE89401885T DE68908638T DE68908638D1 DE 68908638 D1 DE68908638 D1 DE 68908638D1 DE 89401885 T DE89401885 T DE 89401885T DE 68908638 T DE68908638 T DE 68908638T DE 68908638 D1 DE68908638 D1 DE 68908638D1
Authority
DE
Germany
Prior art keywords
triode
sealed
vacuum
manufacturing process
particular diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89401885T
Other languages
English (en)
Other versions
DE68908638T2 (de
Inventor
Didier Pribat
Pesant Jean-Pierre Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE68908638D1 publication Critical patent/DE68908638D1/de
Application granted granted Critical
Publication of DE68908638T2 publication Critical patent/DE68908638T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/148—Manufacture of electrodes or electrode systems of non-emitting electrodes of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE89401885T 1988-07-08 1989-06-30 Unter Vakuum versiegeltes elektronisches Mikrobauteil, insbesondere Diode oder Triode, und dessen Herstellungsverfahren. Expired - Fee Related DE68908638T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8809303A FR2634059B1 (fr) 1988-07-08 1988-07-08 Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
DE68908638D1 true DE68908638D1 (de) 1993-09-30
DE68908638T2 DE68908638T2 (de) 1993-12-23

Family

ID=9368253

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89401885T Expired - Fee Related DE68908638T2 (de) 1988-07-08 1989-06-30 Unter Vakuum versiegeltes elektronisches Mikrobauteil, insbesondere Diode oder Triode, und dessen Herstellungsverfahren.

Country Status (4)

Country Link
US (2) US5127990A (de)
EP (1) EP0350378B1 (de)
DE (1) DE68908638T2 (de)
FR (1) FR2634059B1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2634059B1 (fr) * 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
US5225376A (en) * 1990-05-02 1993-07-06 Nec Electronics, Inc. Polysilicon taper process using spin-on glass
US5289077A (en) * 1991-01-28 1994-02-22 Sony Corporation Microelectronic ballistic transistor
US5233263A (en) * 1991-06-27 1993-08-03 International Business Machines Corporation Lateral field emission devices
DE69205753T2 (de) * 1991-08-01 1996-05-30 Texas Instruments Inc Verfahren zur Bildung von Vacuummikrokammern zur Einbettung von Vorrichtungen der Mikroelektronik.
EP0525763B1 (de) * 1991-08-01 1995-10-25 Texas Instruments Incorporated Verfahren zur Herstellung eines Mikroelektronisches Bauelement
FR2683918B1 (fr) * 1991-11-19 1994-09-09 Thomson Csf Materiau constitutif d'une lunette de visee et arme utilisant cette lunette.
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
CA2154245A1 (en) * 1993-01-19 1994-08-04 Leonid Danielovich Karpov Field-emission device
DE4325708C1 (de) * 1993-07-30 1994-06-16 Siemens Ag Verfahren zur Herstellung einer elektrisch leitenden Spitze aus dotiertem Silizium mittels lokaler Molekularstrahlepitaxie und Anwendung des Verfahrens zur Herstellung von Bauelementen der Vakuumelektronik (Feldemissionskathoden)
SE9304145D0 (sv) * 1993-12-10 1993-12-10 Pharmacia Lkb Biotech Sätt att tillverka hålrumsstrukturer
KR100314830B1 (ko) * 1994-07-27 2002-02-28 김순택 전계방출표시장치의제조방법
US5618216C1 (en) * 1995-06-02 2001-06-26 Advanced Vision Tech Inc Fabrication process for lateral-emitter field-emission device with simplified anode
US5811929A (en) * 1995-06-02 1998-09-22 Advanced Vision Technologies, Inc. Lateral-emitter field-emission device with simplified anode
US5616061A (en) * 1995-07-05 1997-04-01 Advanced Vision Technologies, Inc. Fabrication process for direct electron injection field-emission display device
US5644190A (en) * 1995-07-05 1997-07-01 Advanced Vision Technologies, Inc. Direct electron injection field-emission display device
US5693235A (en) * 1995-12-04 1997-12-02 Industrial Technology Research Institute Methods for manufacturing cold cathode arrays
US5965218A (en) * 1997-03-18 1999-10-12 Vlsi Technology, Inc. Process for manufacturing ultra-sharp atomic force microscope (AFM) and scanning tunneling microscope (STM) tips
US6060398A (en) * 1998-03-09 2000-05-09 Siemens Aktiengesellschaft Guard cell for etching
FR2780808B1 (fr) 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
KR100277691B1 (ko) * 1998-09-17 2001-02-01 정선종 단파장 광전소자 제조용 장치 및 그를 이용한 단파장 광전소자제조방법
US6602791B2 (en) * 2001-04-27 2003-08-05 Dalsa Semiconductor Inc. Manufacture of integrated fluidic devices
US7477017B2 (en) * 2005-01-25 2009-01-13 The Board Of Trustees Of The University Of Illinois AC-excited microcavity discharge device and method
US20060192494A1 (en) * 2005-02-25 2006-08-31 Mastroianni Sal T In-situ sealed carbon nanotube vacuum device
US7885419B2 (en) * 2006-02-06 2011-02-08 Vocollect, Inc. Headset terminal with speech functionality
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
DE2552181A1 (de) * 1975-11-21 1977-06-02 Licentia Gmbh Verfahren zum herstellen einer elektrisch leitenden kontaktierungsschicht
US4163949A (en) * 1977-12-27 1979-08-07 Joe Shelton Tubistor
US4410832A (en) * 1980-12-15 1983-10-18 The United States Of America As Represented By The Secretary Of The Army EBS Device with cold-cathode
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
FR2634059B1 (fr) * 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
US5136205A (en) * 1991-03-26 1992-08-04 Hughes Aircraft Company Microelectronic field emission device with air bridge anode

Also Published As

Publication number Publication date
FR2634059A1 (fr) 1990-01-12
US5625250A (en) 1997-04-29
FR2634059B1 (fr) 1996-04-12
EP0350378A1 (de) 1990-01-10
DE68908638T2 (de) 1993-12-23
EP0350378B1 (de) 1993-08-25
US5127990A (en) 1992-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee