DE60333988D1 - Siliziumlichtwellenleiter mit auf dem wellenleiter positionierten mos-kondensatoren - Google Patents

Siliziumlichtwellenleiter mit auf dem wellenleiter positionierten mos-kondensatoren

Info

Publication number
DE60333988D1
DE60333988D1 DE60333988T DE60333988T DE60333988D1 DE 60333988 D1 DE60333988 D1 DE 60333988D1 DE 60333988 T DE60333988 T DE 60333988T DE 60333988 T DE60333988 T DE 60333988T DE 60333988 D1 DE60333988 D1 DE 60333988D1
Authority
DE
Germany
Prior art keywords
silicon
wave
guide
change
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333988T
Other languages
English (en)
Inventor
Joseph Shappir
Ar Amir Sa
Nissim Ben-Yosef
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yissum Research Development Co of Hebrew University of Jerusalem
Original Assignee
Yissum Research Development Co of Hebrew University of Jerusalem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yissum Research Development Co of Hebrew University of Jerusalem filed Critical Yissum Research Development Co of Hebrew University of Jerusalem
Application granted granted Critical
Publication of DE60333988D1 publication Critical patent/DE60333988D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Color Television Image Signal Generators (AREA)
DE60333988T 2002-03-14 2003-03-13 Siliziumlichtwellenleiter mit auf dem wellenleiter positionierten mos-kondensatoren Expired - Lifetime DE60333988D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL14871602A IL148716A0 (en) 2002-03-14 2002-03-14 Control of optical signals by mos (cosmos) device
PCT/IL2003/000212 WO2003077015A1 (en) 2002-03-14 2003-03-13 Silicon light waveguide with mos capacitors positioned on the waveguide

Publications (1)

Publication Number Publication Date
DE60333988D1 true DE60333988D1 (de) 2010-10-14

Family

ID=27799858

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333988T Expired - Lifetime DE60333988D1 (de) 2002-03-14 2003-03-13 Siliziumlichtwellenleiter mit auf dem wellenleiter positionierten mos-kondensatoren

Country Status (8)

Country Link
US (1) US6987910B2 (de)
EP (1) EP1483618B1 (de)
JP (1) JP2005520189A (de)
AT (1) ATE479920T1 (de)
AU (1) AU2003227302A1 (de)
DE (1) DE60333988D1 (de)
IL (1) IL148716A0 (de)
WO (1) WO2003077015A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
GB2407394A (en) * 2003-10-23 2005-04-27 Dow Corning Ltd Optical waveguide with two differently dimensioned waveguiding layers on substrate
US7672558B2 (en) 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US7217584B2 (en) 2004-03-18 2007-05-15 Honeywell International Inc. Bonded thin-film structures for optical modulators and methods of manufacture
US7149388B2 (en) * 2004-03-18 2006-12-12 Honeywell International, Inc. Low loss contact structures for silicon based optical modulators and methods of manufacture
US7177489B2 (en) 2004-03-18 2007-02-13 Honeywell International, Inc. Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
US20060063679A1 (en) * 2004-09-17 2006-03-23 Honeywell International Inc. Semiconductor-insulator-semiconductor structure for high speed applications
NO322520B1 (no) * 2004-12-23 2006-10-16 Fred Olsen Energy Asa Anordning for lagring av ror, anordning for transport av ror og fremgangsmate for a ta fra hverandre en rorstreng
US20070101927A1 (en) * 2005-11-10 2007-05-10 Honeywell International Inc. Silicon based optical waveguide structures and methods of manufacture
US7362443B2 (en) * 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
US7442589B2 (en) 2006-01-17 2008-10-28 Honeywell International Inc. System and method for uniform multi-plane silicon oxide layer formation for optical applications
WO2008048369A2 (en) * 2006-03-31 2008-04-24 Massachusetts Institute Of Technology Method and apparatus for modulation using a conductive waveguide
US7463360B2 (en) 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US7454102B2 (en) * 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US20070274655A1 (en) * 2006-04-26 2007-11-29 Honeywell International Inc. Low-loss optical device structure
US7535576B2 (en) 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
CN100514099C (zh) * 2006-08-30 2009-07-15 中国科学院半导体研究所 双电容金属氧化物半导体硅基高速高调制效率电光调制器
CN100468103C (zh) * 2006-08-30 2009-03-11 中国科学院半导体研究所 三电容mos硅基高速高调制效率电光调制器
CN101609101B (zh) * 2009-07-21 2012-07-18 浙江大学 基于硅基高速电光调制的波导环形谐振腔的微加速度计
JP2012108550A (ja) * 2012-02-27 2012-06-07 Fujitsu Ltd 光送信器
WO2013146620A1 (ja) 2012-03-30 2013-10-03 日本電気株式会社 光機能素子及びその製造方法
US20170176780A1 (en) * 2014-04-02 2017-06-22 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Semiconductor waveguide structure
KR102585256B1 (ko) * 2016-11-11 2023-10-05 삼성전자주식회사 빔 스티어링 장치 및 이를 포함하는 시스템
US10768365B2 (en) * 2018-03-21 2020-09-08 Futurewei Technologies, Inc. Enabling thermal efficiency on a silicon-on-insulator (SOI) platform
US10897119B1 (en) 2019-09-13 2021-01-19 Hewlett Packard Enterprise Development Lp Temperature sensor integrated with MOS capacitor for stabilizing lasers
US11454832B2 (en) 2020-12-28 2022-09-27 Trustees Of Boston University MOSCAP ring resonator optical modulator
US11927819B2 (en) * 2021-11-10 2024-03-12 Hewlett Packard Enterprise Development Lp Optical device having a light-emitting structure and a waveguide integrated capacitor to monitor light

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877299A (en) * 1989-03-15 1989-10-31 United States Of America As Represented By The Secretary Of The Air Force Metal-insulator-semiconductor control of guided optical waves in semiconductor waveguides
US4958898A (en) * 1989-03-15 1990-09-25 The United States Of America As Represented By The Secretary Of The Air Force Silicon double-injection electro-optic modulator with insulated-gate and method of using same
FR2647965A1 (fr) * 1989-05-30 1990-12-07 Thomson Csf Modulateur electro-optique du type transistor a effet de champ
US5367177A (en) * 1991-07-17 1994-11-22 The United States Of America As Represented By The Secretary Of The Air Force Wavelength selective heterojunction field effect transistor
JPH06216467A (ja) 1993-01-19 1994-08-05 Hitachi Ltd 半導体光分散補償器
US5838870A (en) * 1997-02-28 1998-11-17 The United States Of America As Represented By The Secretary Of The Air Force Nanometer-scale silicon-on-insulator photonic componets
US6208773B1 (en) * 1999-02-18 2001-03-27 Trw Inc. Addressable, semiconductor adaptable Bragg gratings (ASABG)

Also Published As

Publication number Publication date
IL148716A0 (en) 2002-09-12
AU2003227302A1 (en) 2003-09-22
ATE479920T1 (de) 2010-09-15
WO2003077015A1 (en) 2003-09-18
US6987910B2 (en) 2006-01-17
EP1483618A1 (de) 2004-12-08
US20050220405A1 (en) 2005-10-06
JP2005520189A (ja) 2005-07-07
EP1483618B1 (de) 2010-09-01

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