DE60320665T2 - WORK PIECE PROCESSING SYSTEM - Google Patents

Abstract

A workpiece processing system for processing semiconductor wafers and other flat media includes a stand-alone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

Description

Background of the invention

The Invention relates to surface treatment, the washing, rinsing and drying workpieces, such as semiconductor wafers, flat panel displays, glass masks, solid discs or optical media, thin film heads, or other objects or Workpieces, formed of a substrate on which microelectronic circuits, Data storage elements or layers or micromechanical elements can be formed. These and similar objects are collectively referred to herein as a "wafer" or "workpiece."

The Semiconductor manufacturing industry is constantly trying to improve processes, the for the production of microelectronic circuits and components used, such as the production of integrated Circuits of wafers. The goals of many of these improved processes are the shortening the amount of time needed to process a wafer, to the desired to form integrated circuits, increasing the yield of useful integrated circuits per wafer, for example by reducing the contamination of the wafer during processing, reducing the number of steps needed to the desired to produce integrated circuits, and reducing production costs.

at It is often necessary to process wafers, one or both Treat sides of the wafer with a fluid, either in liquid, in vapor or gas form. Such fluids are used, for example, for etching the Wafer surface, for cleaning the wafer surface, for drying the wafer surface, for passivating the wafer surface, for depositing films on the wafer surface, and so on.

Various Systems and procedures were used to control these production processes perform. For example, long-term manual or automated ones have been used Wet etchings at different production steps used. Wet etch banks typically have one Series of immersion tanks and a mechanism to successively one Set of workpieces to dive into every tank.

however these systems have some disadvantages. These disadvantages include a relatively large one Consumption of process chemicals and water, for example 30-35 liters for each Wet etch tank, at a bath life of for example 2-4 hours. This consumption of process chemicals increases production costs, ultimately the cost of the final product increased such as computers, cell phones, and virtually everything all types of consumer, industrial, commercial and military Electronics products.

Many chemicals used in processing, such as HF, HCl, H ₂ SO _4, and H ₂ O ₂ , are toxic, expensive, and / or difficult to handle and dispose of. As a result, complex drainage, recovery and disposal systems are often needed to effectively handle and dispose of these chemicals used in the work process. In addition, even if appropriate disposal operations are carried out, the process chemicals used are still at risk of damaging the environment. Accordingly, there is a need for processing machines and methods that rely less on chemicals of this type.

The Reduction of water consumption is also beneficial, especially in Areas where clean water is becoming increasingly scarce. Disposal from dirty water from production operations to environmentally friendly Fashion can often be difficult or expensive. Consequently, the Reduction of water consumption in the production process important.

wafer be in clean rooms edited to reduce the risk of contamination resulting in errors in end products such as microelectronic or micromechanical devices to lead, to reduce. clean rooms are expensive and require time for the construction and the maintenance. Wafer or workpiece processing machines, the Now in use, such as wet etchings, often require a large amount at clean room place. this leads to to higher Production costs and other disadvantages. Consequently, there is a need on more compact processing machines, while maintaining or improving process speed or throughput need less clean room space.

The overall machining times for large loads of workpieces in existing machining systems are often relatively long. Wet bench operations may typically take 45 minutes. In some systems, the workpieces may be moved between different process stations, during a single processing phase, or a single step. This slows down the entire production time. Alternatively, in some processing systems, including spray systems or gas deposition systems, only a small number of workpieces may be processed in a given time, and / or only a limited number of processing machines or systems can be installed within the clean room. Consequently, there is a need for systems for processing workpieces that are compact but capable of handling large quantities of workpieces in a relatively short period of time.

at certain process steps, ozone is introduced into the process chamber. Ozone is typically mixed with water, which sometimes releases dissolved chemicals contains fed. The ozone is then removed from the process chamber (optional along with others Chemicals, such as acid fumes) and then to the atmosphere issued.

ozone however, it is a chemically highly reactive gas. In high concentrations can it for People become poisonous. The exhaust gas mixture of the ozone can therefore be both toxic and highly corrosive. Consequently, the requires Dealing with the exhaust gas from a process chamber generally special measures. For example, must Components, such as pipes and so on in general PVDF or other plastics that are made of corrosion resist. Also leak detectors can be used to Track any leaks in the pipes or pipes that transport the exhaust gases from the process chamber to the outside.

The US 2002/0045008 A1 discloses a substrate processing apparatus and a substrate processing method for processing a substrate to be processed held in a processing vessel, to which ozone gas is supplied to the substrate, the apparatus comprising: an ozone gas supply system for supplying the ozone gas thereto Processing vessel, inner exhaust means for discharging an inner atmosphere into the processing vessel, ambient discharge means for discharging an ambient atmosphere around the processing vessel, an ozone killer for removing ozone from the inner atmosphere derived from the inside of the processing vessel.

JP 2002 353184 A discloses a substrate processing method and a substrate processing apparatus wherein after supplying an ozone gas and steam into the processing vessel and processing a semiconductor wafer, air is supplied from an air supply source connected to an ozone gas supply line for supplying the ozone gas into the processing vessel is, and ozone gas atmosphere within the processing vessel is replaced by air atmosphere.

The US-A-6 035 871 Disclosed is an apparatus for manufacturing semiconductors having a place where a cleaning apparatus for cleaning objects is provided, the cleaning apparatus comprising: a gas generating apparatus for generating an ozone gas and a hydrogen gas, a gas dissolving apparatus for dissolving the ozone gas, respectively of the hydrogen gas into pure water to produce ozonated and hydrogenated water, and a purifier for spraying the ozonated water and hydrogenated water onto the objects.

It Ozone converters or shredders were used to produce ozone in one Convert exhaust gas into oxygen. These transducers or destroyers typically use catalysts such as manganese dioxide. However, the catalysts lose their effectiveness or ability catalyze when saturated with condensates. It is also important, To prevent stray catalyst particles in the process chamber advised where they can cause pollution.

Accordingly It is another object of the invention to provide an improved ozone destroyer to destroy ozone by converting ozone into oxygen.

Brief description of the invention

processing systems or machines and procedures have now been invented to the top overcome disadvantages described. These new systems and procedures ensure fast and efficient Wafer processing, and at a reduced cost. Additionally avoid These systems and methods require the use of large quantities of various expensive and toxic chemicals. The invention therefore ensures significant progress in the technology of production of Semiconductor wafers and the like Workpieces. The Invention is for a workpiece processing system preferably determined in a standalone process apparatus, having vertically stacked modules. The vertically stacked Modules advantageously have the system components that for the Processing of workpieces be used.

To this end, the invention provides a system according to claim 1, and further provides a method according to claim 5. Further embodiments of the invention are described in the dependent claims. The system is highly compact and requires a minimum amount of floor space in a clean room. This reduces both the initial costs and the subsequent operational costs, and allows for higher throughput or higher production speed through more systems within the clean room. Compared to a typical wet etch bench system, the It may take up about 15 square meters of cleanroom floor space, the present system occupies less than one or two square meters, and has increased throughput. In addition, the present system consumes only a small fraction of the amount of process chemicals needed by wet etch bench systems. In addition, the initial cost of the present system is lower than that of the wet etch bench systems.

The Ozone gas consumed during processing in the process chamber is stored in ejected the ozone killer, where it is converted to oxygen. This ozone conversion takes place within the system. The danger of release of toxic ozone gas is diminished. The ozone converter advantageously uses one Catalyst to convert ozone into oxygen. The saturation of the catalyst with precipitation is due to the novel design and arrangement of the ozone killer reduced or avoided.

The Invention exists both in subcombinations of the described Features as well as in the individual components.

Brief description of the drawings

In In the drawings, the same reference numerals designate the same elements throughout FIG the different views.

It demonstrate:

1 a front perspective view of a workpiece processing system according to a preferred embodiment, wherein various covers have been removed for the purpose of illustration.

2 a perspective rear view of the processing system 1 ,

3 a perspective view of a process chamber assembly according to a preferred embodiment.

4 a perspective view of a rotor which in the process chamber arrangement of 3 can be used.

5 a schematic representation of a preferred machining method.

6 a schematic representation of an alternative preferred processing method.

7 an exploded perspective view of the ozone killer, in 1 and in 2 is shown.

8th a cross-sectional view of a preferred ozone killer, as shown in the 5 to 6 is shown.

9 a perspective view of an automated processing system having the ozone killer, the 7 and in 8th is shown.

Detailed description of the drawings

The here used terms workpiece, wafer or semiconductor wafers mean any flat medium, including semiconductor wafers and other substrates or wafers, glass, masks and storage media, MEMS substrates or any other workpieces that microelectronic, micromechanical or microelectromechanical devices exhibit.

Referring in detail to the drawings as they appear in the 1 and in 2 shown has a workpiece processing system 10 preferably a first module 12 , a second module 14 and a third module 16 on. More or fewer modules can be added to the editing system 10 but three modules are preferred. Each module houses a plurality of processing system components.

The editing system 10 It can be used to machine workpieces of various sizes, but is typically designed for machining workpieces of one size, such as 200mm or 300mm diameter semiconductor wafers. The area that the editing system 10 on a clean room floor, or the "footprint" of the system, is preferably minimized to increase the amount of space available for additional processing systems and / or other clean room equipment. In the stand-alone editing system 10 Using a modular design that is as compact as possible, the size of the workpieces to be machined generally dictates the least possible size of the base surface of the system, as well as the lowest height of the system. Thus, with certain limitations, the smaller the size of the workpieces, the more in the processing system 10 be edited, the smaller the footprint of the system and its height can be.

If 200mm semiconductor wafers are processed, then the base area of the third module is 16 or the lower module preferably 46 cm to 60 cm wide by 115 cm to 135 cm long, more preferably 50 cm wide by 125 cm long. To handle larger workpieces, such as 300mm semiconductor wafers, the third module is 16 preferably 60 cm to 70 cm wide by 115 cm to 135 cm long, more preferably 65 cm wide by 125 cm long. The first and the second module 12 . 14 preferably have similar cross-sectional areas compared to the third module 16 , and may be a little smaller, as it is in 1 and in 2 is illustrated.

When configured for machining the 200mm semiconductor wafers, the first, second and third modules have 12 . 14 . 16 preferably a total height of 145 cm to 155 cm, more preferably 150 cm. To process larger workpieces, such as 300mm semiconductor wafers, have the first, second, and third modules 12 . 14 . 16 preferably a total height of 155 cm to 175 cm, more preferably 160 cm. Consequently, the footprint and the height of the stand-alone workpiece processing system 10 generally significantly smaller than typical existing machining systems. This is the editing system 10 compact and takes up relatively little space in a clean room environment.

The first module 12 preferably comprises a system control unit, the control panel and a display 18 on the front of the first module 12 for the control and observation work of the various systems. The first module 12 preferably also includes a system power supply and any other electrical and electronic equipment needed to perform the various system operations.

The second module 14 has a process chamber arrangement 20 on how it is in 2 and in 3 is shown. The process chamber arrangement 20 has a substantially cylindrical process chamber 22 or a ball on, by means of the carrier 23 to the second module 14 is mounted. The carriers 23 are preferably via bolts or mounts to support beams or other mating base structure in the second module 14 appropriate.

The second module 14 also has a door 64 on to the access in the process chamber 22 provide. The door 64 preferably forms a seal with a front end 24 the process chamber 22 , A window 66 is preferably in the door 64 to visually inspect the process chamber 22 to enable.

The process chamber 22 may be horizontally oriented, but is preferably upwardly inclined at an angle of, for example, 5 ° to 30 °, and preferably about 10 °, such that the front end 24 the process chamber 22 at a greater height than the rear end 26 the process chamber 22 lies. Examples of such a process chamber 22 and a chamber arrangement 20 are in that U.S. Patent No. 6,418,945 described.

A rotor 40 is how in 4 is preferably rotatable within the process chamber 22 stored. A drive shaft 42 extends from the back of the rotor 40 in an engine 44 that is at the far end 26 the process chamber 22 located. The power cables that are different from the system controller in the first module 12 extend by means of connections 46 preferably for electric power and the control of the motor 44 , The back end 26 the process chamber 22 is preferably with a suitable sealing arrangement 27 sealed.

The rotor 40 preferably has a two-cassette arrangement having a first or rear cassette position 50 and a second or front cassette position 52 having. As a result, the rotor can 40 pick up two carriers or cassettes, a first cassette 54 and a second cassette 56 , The workpieces 55 become in pits or wafer places within each cassette 54 . 56 held. Typically, for example, the cassettes hold up to 25 wafers, although other sizes of cassettes may be used. The workpieces 55 are each spaced from one another in the cassette to make process liquids and / or gases in contact with all surfaces of the workpieces 55 to enable.

The cassettes are generally standard components available from different manufacturers, although the size, shape, and features of different types of cassettes may vary. The rotor 40 can be customized to accept a specific cassette (model number) from a particular manufacturer. Thus, the features and dimensions of the rotor 40 to the specific size, shape, and characteristics of those for use in the machining system 10 adapted to selected cassettes. Specific examples of rotors and cassettes in the process chamber 22 More specifically, in the U.S. Patent No. 6,418,945 described.

For ease of design, manufacture and use has the first cassette 54 preferably the same structure as the second cassette 56 so the positions 50 . 52 the first and second cassette within the rotor 40 they can be the same. Although the invention contemplates each rotor having positions for the first and second cartridges, regardless of whether the cartridges are of the same type, the use of two like cartridges allows (a) the first and second cartridge positions 50 . 52 are the same; (b) that the rotor is generally symmetrical is, and causes (c) that the loading sequence of the cassettes 54 . 56 becomes irrelevant.

Depending on which chemicals in the processing system 10 can be used, the rotor 40 and the process chamber 22 Likewise, other components exposed to the chemicals may be made of stainless steel, or alternatively, the material of the rotor and process chamber may be ^Teflon® (ie, fluorine-containing plastics) or other suitable material. In a preferred embodiment, harsh chemicals such as acids and solutions (eg, HF, HCl, H ₂ SO _4, and H ₂ O ₂ ) are not in the processing system 10 used, leaving a process chamber 22 and a rotor 40 can be used in stainless steel, and so that any negative impact on the environment is significantly reduced.

As in 4 shown, extend the spray dispenser 60 for the provision of process fluid and / or rinse water preferably substantially over the entire length of the process chamber 22 , The distributors 60 have spray nozzles or others in the process chamber 22 directed openings to liquids or gases in the process chamber 22 to spray. A valve 62 is preferably installed to remove gases or vapors from the process chamber 22 derive, as well as an outflow 47 to remove liquids from the process chamber 22 to remove.

The process chamber 22 may further comprise various other components for machining the workpieces 55 to improve. The process chamber 22 For example, it may include: (a) an anti-static generator to control the static electricity in the chamber 22 reduce (b) one or more heating systems to the workpieces 55 and / or to heat the process or purge fluids, (c) an ozone killer 45 to convert the ozone into oxygen.

The third module 16 preferably serves as a compartment for the storage of the process fluid. The third module 16 preferably has an ozone generator 70 on, in exchange or in conjunction with the process chamber 22 the ozone gas for the process chamber 22 outputs. The ozone generator 70 is preferably with a gas spray dispenser 61 in the process chamber 22 connected by means of one or more ozone supply lines (not shown). In a preferred embodiment, the ozone generator 70 preferably a high-performance ozone generator capable of producing up to 240 g / cubic meter of ozone or about 90 g / hour of ozone. If necessary, separate cooling water lines can be routed to the ozone generator.

A feed for deionized water is preferably in communication with the process chamber 22 to the process chamber 22 supply deionized water. The deionized water may come from a deionized water tank, located in the third module 16 can be supplied, or it can be supplied from an external source by means of one or more fluid supply lines or other suitable fluid supply means. One or more heaters may be in the third module 16 or at another convenient location to heat the deionized water before it enters the process chamber 22 entry.

The third module 16 may house additional process fluid supplies, such as an ammonium hydroxide (NH ₄ NOH) supply, and / or any other suitable process fluid supplies. Any fluid supply in the processing system 10 is preferably used, is in communication with the process chamber 22 by means of one or more fluid supply lines. Purge gas and / or drying gas (eg, N ₂ ) and / or clean dry air (CDA), when used, are typically supplied to the system from the configuration or device.

The third module 16 may also include pumps, filters and / or other components for effective supply of the process chamber 22 containing process liquids and / or gases. In addition, the third module 16 Alarms, sensors and other monitoring devices for detecting process fluid levels in the process chamber, and alerting an operator if a problem should occur within the process chamber. One or more of these devices may alternatively be in the first or second module 12 . 14 be positioned.

With reference to the 7 and the 8th has a preferred ozone killer 45 an upper end 151 and a lower end 153 , The exhaust pipe 52 from the process chamber 22 is with an entrance 174 at or near the top 151 of the ozone killer 45 connected. As indicated by the arrows E in 8th is shown, the exhaust gas flows from the process chamber in the ozone killer 45 down, turn the direction and then flow through the catalyst 164 up and then through an exit from the ozone killer 45 to the system or housing exhaust gas duct 63 , The drain line is either provided with a valve or edged to prevent ozone from flowing into the drain.

While 8th the ozone killer 45 in a vertically upright position, with the exhaust gas vertically up through the catalyst 164 flows, can the ozone killer 45 also have a different position or orientation, as long as it is a vertical one Component to the flow direction through the catalyst gives.

Further referring to 8th is the catalyst 164 in that the exhaust gas is at or adjacent to the top of the ozone killer 45 enters and flows out, and up through the catalyst 164 flows, better against the chamber exhaust gas line 52 and the process chambers isolated. Consequently, the risk of catalyst particles leaking into the exhaust passage of the chamber or into the process chambers is reduced since the catalyst particles would have to move both against gravity and against the exhaust flow to enter the chamber exhaust line 52 to get. As the exhaust gas also flows up through the catalyst, any condensation in the catalyst can go down through gravity and downflow. This helps prevent the catalyst effect from being lost due to the saturation of the catalyst. That is in the exhaust flow through the catalyst 164 moving ozone is converted into oxygen, which then passes through the system exhaust line 63 can be vented.

Further referring to the 7 and the 8th , the following additional detailed description refers to a preferred construction of an ozone killer, without individually describing each and every required element of the invention. The ozone killer 45 has an outer container 152 standing on or in a case with a holder 155 can be attached. A lid 166 is on a flange 158 of the outer container 152 kept and installed. An o-ring or seal 156 seals the lid 166 against the outer container 152 from. Cover bolts or fasteners 170 secure the lid 166 on the outer container 152 , An inner container or canister 160 contains the catalyst 164 which is typically a manganese dioxide-based catalyst capable of decomposing ozone into oxygen. A perforated plate 162 at the bottom of the canister 160 keeps the catalyst 164 (typically solid material beads) in the canister 160 , The perforated plate 162 has openings that allow the exhaust gas to enter the bottom, with the openings the canister entrances 165 form. A canister neck 163 is at the top or the top of the canister or inner container 160 appropriate. Canister retaining bolt 168 bring the canister 160 by means of the canister neck 163 on the lid 166 at. A canister O-ring 172 seals the canister neck 163 against the lid 166 from. A lid bushing 176 extends through an opening in the lid and in the canister neck 163 into it, and connect it to the canister exit 175 at the top or top of the canister 160 , A pipe socket 178 connects a breather 180 with the canister exit 175 through the lid bushing 176 , A clean dry air supply line 182 is with the inlet side of the breather 180 connected. The outlet side of the deaerator 180 is directly or indirectly to the system exhaust gas line 63 connected. The deaerator 180 can be replaced by an airflow amplifier. The entrance 174 forms through the lid 166 through an inflow path into the ozone killer 45 ,

Referring to 8th is the canister or inner container 160 who is the catalyst 164 contains, preferably in the outer container 152 suspended. As it is in 7 is shown, are the outer container 152 and the inner container 160 preferably cylindrical, although other cross-sectional shapes may be used. Referring to 8th An annular flow path extends from the entrance 174 down into the ozone killer 45 , between the outer walls of the inner container 160 and the inner walls of the outer container 152 to the canister entrances 165 , Of course, other types of ozone killers can be used, including thermal, UV, and catalytic devices, or other equivalent devices that can convert, neutralize, or destroy ozone.

In use, the workpieces 55 in the cassettes 54 . 56 either loaded manually or by means of a robot or other automatic device. The door 64 on the second module 14 is opened, preferably by hand by an operator, for access into the process chamber 22 to accomplish. The first cassette 54 is raised and in the rotor 40 placed as it is in the U.S. Patent No. 6,418,945 is described. The first cassette 54 becomes towards the rear side of the rotor 40 moved until it can no longer be moved. Because the rotor 40 preferably positioned at an inclined angle, as in 2 and in 3 is shown, the first cassette moves 54 go downstairs and be in the first cassette slot 50 inside the rotor 40 used with some support by gravity.

When the first cassette 54 in the rotor 40 is set up, then the operator loads the second cassette 56 in the rotor 40 , where the same course of action takes place. The second cassette 56 gets into the rotor 40 moved in until they got the first cassette 50 touched so that they do not continue towards the rear of the rotor 40 can be moved.

The operator then closes the door 64 , A processing sequence may be pre-programmed into the system control unit or may be programmed by the operator using the control panel and the display 18 be set or selected. In a typical application becomes, as it in the schematic representation of the 5 Shown is ozone gas by means of the distributor 60 in the process chamber 22 sprayed while the engine 44 the rotor 40 rotates. If the rotor 40 begins to turn, the workpieces are 55 in their respective cassettes 54 . 56 held by restraining bars or other restraint mechanisms as shown in the U.S. Patent No. 6,418,945 is described.

Heated deionized water (heated by a heater 43 is supplied to the system or is supplied separately) is simultaneously in the process chamber 22 sprayed to form a hot liquid boundary layer through which the ozone gas reaches the surface of each workpiece 55 can diffuse. The deionized water is preferably heated to a temperature of from 30 ° C to 110 ° C, more preferably to 40 ° C, 50 ° C, 60 ° C, 70 ° C, 80 ° C or 90 ° C to 100 ° C. The ozone diffuses through the heated boundary layer, which accelerates the diffusion reaction kinetics to react on the surface of the workpiece as shown in FIG U.S. Patent No. 6,267,125 and in U.S. Patent No. 6,497,768 is described.

In an alternative embodiment, as in 6 ammonium hydroxide (NH ₄ OH) may be from a source or a tank 49 heated deionized water (or by means of a pump 51 be pumped in) before the deionized water into the process tank 22 occurs to improve the cleaning process. The concentration of NH ₄ OH in the deionized water is preferably very low, on the order of about 500-5000: 1 or 1000-3000 or about 2000: 1 parts of deionized water to NH ₄ OH. The addition of NH ₄ OH is particularly effective in photoresist removal applications because it generally increases the removal rate of photoresist layers. NH ₄ OH mixed with heated deionized water may also be added to the process chamber in a separate step after only the steps of feeding the ozone and deionized water into the process chamber 22 were executed, are supplied. The use of ammonium hydroxide provides improved particle performance, cleaning efficiency of SiN particles, and removal of antireflective coatings.

After the cleaning and / or removal steps are carried out the workpieces 55 typically rinsed using deionized water coming from the manifolds 60 is sprayed, and then dried with drying gas such as N ₂ gas. A purge gas, such as N ₂ gas, may be used between the purge and dry steps or between other process steps to remove excess fluids from the process chamber. Exhaust vapors and gases flow through the exhaust outlet 62 from the chamber and into the ozone killer 45 , The ozone in the ozone killer is converted into oxygen gas from the system tank along with other gases or vapors via an exhaust pipe 63 flows out. The various operations may be repeated one or more times to improve the cleaning and removal processes as desired.

Referring to 8th the exhaust gas moves into the ozone killer at or near the top 151 , and moves downwards, as shown by arrows E. The exhaust flow E moves to the lower end 153 of the ozone killer 45 , turns around, and flows upwards through the perforated plate 162 and in the canisters 160 , While the exhaust gas through the catalyst 164 inside the canister 160 flows through, the ozone in the exhaust gas E is converted into oxygen. The breather or airflow amplifier 180 helps reduce the exhaust gas flow through the ozone killer 45 pull it out, eliminating any back pressure on the process chamber. The oxygen passing through the catalyst 164 and all other exhaust components move up through the canister exit 175 , through the breather 180 and through the system exhaust line 63 out.

When water vapor inside the catalyst 164 condenses, the liquid water runs down through the perforated plate 162 and collects at the bottom 153 of the outer container 152 where there is the drainage line for liquids 184 can be removed. Consequently, the saturation of the catalyst 164 prevented with precipitation. As the drain entrance into the ozone killer 45 at or near the top 151 is the risk that the catalyst particles in the chamber exhaust gas line 52 or the process chambers advised diminished. Similarly, the risk that condensed liquid is the exhaust pipe 52 blocked, reduced or eliminated. Preferably, the components of the ozone killer 50 Made of stainless steel that comes in contact with the exhaust, which has a PFA coating to better withstand chemical vapor corrosion in the exhaust flow.

In general, the editing system has 10 when machining 200 mm workpieces, a throughput of about 200 workpieces per hour. If 300mm workpieces are machined, the machining system has 10 a throughput of about 100 workpieces per hour. The actual throughput depends on the type of workpiece machining application that is performed, the number of workpieces machined per unit time, and the number of machining steps that are repeated be, off.

The editing system 10 and the methods described herein can be used in various workpiece processing applications as follows: (1) post-ashing cleaning, (2) photoresist removal, (3) organic material cleaning, (4) photo processing / recovery, (5) post-cleaning etching, as well as in any other suitable process applications.

The editing system 10 has numerous advantages over existing processing systems. First, the system 10 extremely compact, so it does not occupy significant space in a clean room environment. Due to the limited number of required components and process stations, the processing system is 10 relatively inexpensive. The editing system 10 uses relatively mild process chemicals, such as ozone gas and deionized water, so there is minimal, if any, environmental impact. In addition, larger quantities of workpieces can be processed in a relatively short time 10 to be edited.

The ozone killer or converter 45 who in 7 and in 8th can also be used in other types of systems that use ozone. For example, the converter 45 be used in an automated system or robotic system, as described in the publication of international patent application number WO 02/05313 A2 described and in 9 is shown. In this type of automated system is the ozone killer 45 with the exhaust pipe from the ozone process chamber 22 connected. The process chamber may include a rotor tuned to receive wafers directly or carriers 220 or cassettes. The system 200 Indicates: an indexer 202 , preferably at a first height level, a connection station 204 , preferably at a second altitude level higher than the first altitude level, a transmission station 206 , adjacent to the connection station, an ozone process station or chamber 22 or 222 , and a robot 208 which is movable between the transfer station and the process chamber. This type of system can also be a loading device 210 which is connected to the indexer, the loading device being a load lifter for moving a closed container or FOUP 212 with workpieces or semiconductor wafers between an upper position and a lower position, and wherein the load lifter in the lower position is substantially flush with the indexer at the first height level. This type of system can also have at least one lift for the connection station 214 . 216 for moving a container vertically from the first height level to the terminal level at the second height level and a bin door opener 218 have at the connection station. These features, as used in the WO 02/05313 A2 can be described in a system in combination with the ozone converter 45 be used.

Claims (5)

System ( 10 ) for processing one or more workpieces ( 55 ), the system comprising a process chamber ( 22 ) within a housing and a rotor ( 40 ), which holds the workpieces ( 55 ) in the process chamber ( 22 ) and at least one spray distributor ( 60 ) in the process chamber ( 22 ) for spraying a process fluid with deionized water on the workpiece ( 55 ), a heating device ( 43 ) for heating the process liquid, a chamber exhaust gas line ( 52 ), the process chamber ( 22 ) with the inlet ( 174 ) of the ozone killer ( 45 ), an ozone killer ( 45 ) suitable for converting ozone contained in exhaust gases discharged from the process chamber ( 22 ), in oxygen, characterized by: an ozone gas source ( 70 ) within the housing for supplying ozone gas into the process chamber ( 22 ), the ozone killer ( 45 ) within the housing, which has an inlet ( 174 ) and an outlet ( 175 ), and a system exhaust line ( 63 ) connected to the output ( 175 ) of the ozone killer ( 45 ) is connected and protrudes from the housing. System ( 10 ) according to claim 1, further comprising a third module ( 16 ) with a process fluid supply containing an ozone generator ( 70 ) for supplying the process chamber ( 22 ) with ozone gas, a second module ( 14 ) above the third module ( 16 ) and connected to the third module ( 16 ) and that the process chamber ( 22 ), wherein the process fluid supply to the process chamber ( 22 ) connected is; a first module ( 12 ) above the second module ( 14 ) and connected to the second module ( 14 ), the system has a floor area of 0.5 to 1.1 square meters. System ( 10 ) according to claim 1, wherein the ozone gas source ( 70 ) Ozone gas produced at a rate of at least 90 grams / hour. System ( 10 ) according to claim 1, wherein the system ( 10 ) as a subsystem in an automated workpiece processing system ( 200 ), which further comprises: a workpiece container holding area ( 202 ), a docking station ( 204 ) for coupling and opening workpiece containers, a transfer station ( 206 ) to the docking station ( 204 ) and a robot ( 208 ) located between the transfer station ( 206 ) and one or more process chambers ( 22 . 222 ) is movable to workpieces ( 55 ) between them. Method for processing one or more workpieces ( 55 ) with ozone in a wafer manufacturing system ( 10 ) in a housing, wherein the workpieces ( 55 ) into a process chamber ( 22 ), the workpieces ( 55 ) and heated water is applied to the workpieces ( 55 ), comprising: loading a first cassette of workpieces ( 55 ) in a rotor ( 40 ) in the process chamber ( 22 ) Loading a second cassette of workpieces ( 55 ) in the rotor, heating the water to 30-95 degrees Celsius; Spraying the heated water onto the rotating workpieces ( 55 ), Introducing ozone gas from an ozone gas source ( 70 ) within the housing into the process chamber ( 22 ), whereby the ozone gas passes through a layer of heated water on the workpieces ( 55 ) diffuses through; Emptying the ozone gas from the process chamber ( 22 ) into an ozone killer ( 45 ) within the housing, converting the ozone gas into oxygen in the ozone killer ( 45 ) and drying the workpieces ( 55 ).