DE60233643D1 - Selbstausrichtende herstellungstechnik für undurchlässige motive enthaltende gedämpfte phasenschiebermasken - Google Patents

Selbstausrichtende herstellungstechnik für undurchlässige motive enthaltende gedämpfte phasenschiebermasken

Info

Publication number
DE60233643D1
DE60233643D1 DE60233643T DE60233643T DE60233643D1 DE 60233643 D1 DE60233643 D1 DE 60233643D1 DE 60233643 T DE60233643 T DE 60233643T DE 60233643 T DE60233643 T DE 60233643T DE 60233643 D1 DE60233643 D1 DE 60233643D1
Authority
DE
Germany
Prior art keywords
undo
orienting
masks
self
manufacturing technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60233643T
Other languages
English (en)
Inventor
Christophe Pierrat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synopsys Inc
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synopsys Inc filed Critical Synopsys Inc
Application granted granted Critical
Publication of DE60233643D1 publication Critical patent/DE60233643D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60233643T 2001-03-16 2002-02-26 Selbstausrichtende herstellungstechnik für undurchlässige motive enthaltende gedämpfte phasenschiebermasken Expired - Lifetime DE60233643D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/810,823 US6551750B2 (en) 2001-03-16 2001-03-16 Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
PCT/US2002/005844 WO2002075454A2 (en) 2001-03-16 2002-02-26 Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks

Publications (1)

Publication Number Publication Date
DE60233643D1 true DE60233643D1 (de) 2009-10-22

Family

ID=25204797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60233643T Expired - Lifetime DE60233643D1 (de) 2001-03-16 2002-02-26 Selbstausrichtende herstellungstechnik für undurchlässige motive enthaltende gedämpfte phasenschiebermasken

Country Status (7)

Country Link
US (1) US6551750B2 (de)
EP (1) EP1368708B1 (de)
KR (1) KR100678815B1 (de)
CN (1) CN1318912C (de)
AU (1) AU2002309494A1 (de)
DE (1) DE60233643D1 (de)
WO (1) WO2002075454A2 (de)

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US20050221200A1 (en) * 2004-04-01 2005-10-06 Matrix Semiconductor, Inc. Photomask features with chromeless nonprinting phase shifting window
US20060115742A1 (en) * 2004-12-01 2006-06-01 Texas Instruments Incorporated Tri-tone trim mask for an alternating phase-shift exposure system
US20080076034A1 (en) * 2006-09-13 2008-03-27 Anderson Brent A Trim photomask providing enhanced dimensional trimming and methods for fabrication and use thereof
US7687206B2 (en) * 2007-03-08 2010-03-30 United Microelectronics Corp. Mask pattern and method for forming the same
JP6076593B2 (ja) * 2011-09-30 2017-02-08 Hoya株式会社 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法
CN109856930B (zh) * 2017-11-30 2021-05-25 京东方科技集团股份有限公司 对准标记、基板及其制作方法、曝光对准方法
US10811492B2 (en) 2018-10-31 2020-10-20 Texas Instruments Incorporated Method and device for patterning thick layers

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Also Published As

Publication number Publication date
AU2002309494A1 (en) 2002-10-03
KR100678815B1 (ko) 2007-02-05
WO2002075454A2 (en) 2002-09-26
EP1368708B1 (de) 2009-09-09
WO2002075454A3 (en) 2003-09-18
KR20040030540A (ko) 2004-04-09
CN1496495A (zh) 2004-05-12
US6551750B2 (en) 2003-04-22
CN1318912C (zh) 2007-05-30
EP1368708A2 (de) 2003-12-10
US20020132174A1 (en) 2002-09-19

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