DE60201383D1 - Dosierrohr für Gasabgabe - Google Patents

Dosierrohr für Gasabgabe

Info

Publication number
DE60201383D1
DE60201383D1 DE60201383T DE60201383T DE60201383D1 DE 60201383 D1 DE60201383 D1 DE 60201383D1 DE 60201383 T DE60201383 T DE 60201383T DE 60201383 T DE60201383 T DE 60201383T DE 60201383 D1 DE60201383 D1 DE 60201383D1
Authority
DE
Germany
Prior art keywords
gas delivery
dosing tube
dosing
tube
delivery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60201383T
Other languages
English (en)
Other versions
DE60201383T2 (de
Inventor
Jay Brian Dedontney
Anthony Desa
Samuel Kurita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML US Inc filed Critical ASML US Inc
Application granted granted Critical
Publication of DE60201383D1 publication Critical patent/DE60201383D1/de
Publication of DE60201383T2 publication Critical patent/DE60201383T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/01—Control of flow without auxiliary power
    • G05D7/0186—Control of flow without auxiliary power without moving parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Pipeline Systems (AREA)
  • Pipe Accessories (AREA)
  • Measuring Volume Flow (AREA)
DE60201383T 2001-07-13 2002-07-15 Dosierrohr für Gasabgabe Expired - Fee Related DE60201383T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,349 US20020134507A1 (en) 1999-12-22 2001-07-13 Gas delivery metering tube
US905349 2001-07-13

Publications (2)

Publication Number Publication Date
DE60201383D1 true DE60201383D1 (de) 2004-11-04
DE60201383T2 DE60201383T2 (de) 2006-02-16

Family

ID=25420665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201383T Expired - Fee Related DE60201383T2 (de) 2001-07-13 2002-07-15 Dosierrohr für Gasabgabe

Country Status (8)

Country Link
US (1) US20020134507A1 (de)
EP (1) EP1276031B1 (de)
JP (1) JP3621393B2 (de)
KR (1) KR20030007162A (de)
CN (1) CN1397755A (de)
DE (1) DE60201383T2 (de)
SG (1) SG115486A1 (de)
TW (1) TWI240017B (de)

Families Citing this family (34)

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Publication number Priority date Publication date Assignee Title
US6890386B2 (en) * 2001-07-13 2005-05-10 Aviza Technology, Inc. Modular injector and exhaust assembly
KR100829327B1 (ko) 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
US20040144321A1 (en) * 2003-01-28 2004-07-29 Eastman Kodak Company Method of designing a thermal physical vapor deposition system
DE10346033A1 (de) * 2003-10-02 2005-05-04 Siltronic Ag Gasverdünnungsvorrichtung
US20050244580A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company Deposition apparatus for temperature sensitive materials
JP5008252B2 (ja) * 2004-05-18 2012-08-22 パナソニック株式会社 燃料電池用液体燃料収納容器及び燃料電池システム
JP4775641B2 (ja) * 2006-05-23 2011-09-21 株式会社島津製作所 ガス導入装置
CN101460659B (zh) * 2006-06-02 2011-12-07 应用材料股份有限公司 利用压差测量的气流控制
US8123902B2 (en) * 2007-03-21 2012-02-28 Applied Materials, Inc. Gas flow diffuser
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8372482B2 (en) * 2009-02-27 2013-02-12 Goodrich Corporation Methods and apparatus for controlled chemical vapor deposition
JP5141607B2 (ja) * 2009-03-13 2013-02-13 東京エレクトロン株式会社 成膜装置
DE102009043840A1 (de) * 2009-08-24 2011-03-03 Aixtron Ag CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor
KR101102807B1 (ko) * 2009-11-27 2012-01-05 이희영 마이크로파 온열치료기
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
CN103403843B (zh) 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
KR20140038070A (ko) * 2012-09-20 2014-03-28 삼성코닝정밀소재 주식회사 가스 분사 장치 및 이에 사용되는 인젝터 파이프
US10112836B2 (en) * 2012-11-26 2018-10-30 The Regents Of The University Of Michigan Continuous nanosynthesis apparatus and process
TWI469179B (zh) * 2012-11-27 2015-01-11 Ind Tech Res Inst 電漿裝置
US9512519B2 (en) 2012-12-03 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition apparatus and method
JP6465816B2 (ja) * 2013-02-14 2019-02-06 アライアンス・マグネシウム ＨＣｌを生成する水素ガス拡散陽極の集成装置及び当該集成装置を含む電解セル
CN103396008A (zh) * 2013-08-02 2013-11-20 蚌埠雷诺真空技术有限公司 磁控溅射真空室均匀进气装置
DE102013113913A1 (de) 2013-12-12 2015-06-18 Thyssenkrupp Ag Anlagenverbund zur Stahlerzeugung und Verfahren zum Betreiben des Anlagenverbundes
JP5924336B2 (ja) * 2013-12-27 2016-05-25 Ｊｆｅスチール株式会社 化学蒸着処理の原料ガス供給用ノズル
JP6320824B2 (ja) * 2014-03-31 2018-05-09 株式会社東芝 ガス供給管、およびガス処理装置
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
JP6462161B2 (ja) * 2016-02-09 2019-01-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US11610765B1 (en) * 2018-08-09 2023-03-21 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method using argon plasma gas
KR102514673B1 (ko) * 2018-10-26 2023-03-27 제이에프이 스틸 가부시키가이샤 슬릿 노즐 및 고규소 강대의 제조 방법
WO2020097040A1 (en) 2018-11-06 2020-05-14 Corning Incorporated Methods and apparatus comprising a first conduit circumscribed by a second conduit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US20010047756A1 (en) * 1999-05-17 2001-12-06 Bartholomew Lawrence Duane Gas distribution system
KR100394571B1 (ko) * 1999-09-17 2003-08-14 삼성전자주식회사 화학기상증착용 튜브

Also Published As

Publication number Publication date
DE60201383T2 (de) 2006-02-16
US20020134507A1 (en) 2002-09-26
EP1276031B1 (de) 2004-09-29
CN1397755A (zh) 2003-02-19
SG115486A1 (en) 2005-10-28
JP3621393B2 (ja) 2005-02-16
EP1276031A1 (de) 2003-01-15
JP2003130280A (ja) 2003-05-08
KR20030007162A (ko) 2003-01-23
TWI240017B (en) 2005-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee