DE602008005809D1 - Acetal Acid Amplifier, Photoresist Composition Therewith, and Method of Making Photoresist Structures - Google Patents

Acetal Acid Amplifier, Photoresist Composition Therewith, and Method of Making Photoresist Structures

Info

Publication number
DE602008005809D1
DE602008005809D1 DE602008005809T DE602008005809T DE602008005809D1 DE 602008005809 D1 DE602008005809 D1 DE 602008005809D1 DE 602008005809 T DE602008005809 T DE 602008005809T DE 602008005809 T DE602008005809 T DE 602008005809T DE 602008005809 D1 DE602008005809 D1 DE 602008005809D1
Authority
DE
Germany
Prior art keywords
acid
photoresist
amplifier
making
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005809T
Other languages
German (de)
Inventor
Jung-Youl Lee
Min-Ja Yoo
Jeong-Sik Kim
Young-Bae Lim
Jae-Woo Lee
Jae-Hyun Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of DE602008005809D1 publication Critical patent/DE602008005809D1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D317/00Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D339/00Heterocyclic compounds containing rings having two sulfur atoms as the only ring hetero atoms
    • C07D339/02Five-membered rings
    • C07D339/06Five-membered rings having the hetero atoms in positions 1 and 3, e.g. cyclic dithiocarbonates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing
    • Y10S430/123Sulfur in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Compounds That Contain Two Or More Ring Oxygen Atoms (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C 4 ~C 20 mono-cyclic or multi-cyclic saturated hydrocarbon, R 1 is C 1 ˆ¼C 10 linear hydrocarbon, C 1 ~C 10 perfluoro compound or C 5~ C 20 aromatic compound, R a and R b are independently hydrogen atom or C 1 ~C 4 saturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).
DE602008005809T 2007-07-20 2008-07-15 Acetal Acid Amplifier, Photoresist Composition Therewith, and Method of Making Photoresist Structures Active DE602008005809D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070073117A KR101357607B1 (en) 2007-07-20 2007-07-20 Acid-amplifier having acetal group and photoresist composition including the same

Publications (1)

Publication Number Publication Date
DE602008005809D1 true DE602008005809D1 (en) 2011-05-12

Family

ID=39846591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005809T Active DE602008005809D1 (en) 2007-07-20 2008-07-15 Acetal Acid Amplifier, Photoresist Composition Therewith, and Method of Making Photoresist Structures

Country Status (7)

Country Link
US (1) US7935474B2 (en)
EP (1) EP2017274B1 (en)
JP (1) JP5478851B2 (en)
KR (1) KR101357607B1 (en)
AT (1) ATE503750T1 (en)
DE (1) DE602008005809D1 (en)
TW (1) TWI359330B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382010B (en) * 2006-09-20 2013-01-11 Lg Chemical Ltd Additive for non-aqueous electrolyte and secondary battery using the same
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
US20140087309A1 (en) * 2011-04-01 2014-03-27 The Research Foundation Of State University Of New York Olefin-triggered acid amplifiers
US8614047B2 (en) * 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
JP6048871B2 (en) * 2012-09-03 2016-12-21 学校法人東京理科大学 Acid proliferating agent and acid-reactive resin composition containing the acid proliferating agent
JP6079128B2 (en) * 2012-10-23 2017-02-15 Jsr株式会社 Photoresist composition and resist pattern forming method
JP6246550B2 (en) * 2012-11-09 2017-12-13 住友化学株式会社 Resist composition and method for producing resist pattern
KR20140131609A (en) 2013-05-02 2014-11-14 삼성디스플레이 주식회사 Photosensitive resin composition, method of forming pattern, and liquid crystal display using the same
CN111689941A (en) * 2020-06-16 2020-09-22 徐州博康信息化学品有限公司 Trifluoro sulfonamide 1, 4-dioxospiro [4,5] decane photoresist resin monomer and preparation method thereof
KR20240052148A (en) 2022-10-13 2024-04-23 한인정밀화학(주) Photoacid generator and photoresist composition comprising the same
KR102656229B1 (en) 2023-01-12 2024-04-09 백용구 Photoacid generator and photoresist composition comprising the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466977A (en) 1981-04-09 1984-08-21 The Upjohn Company N-[2-Amino(oxy- or thia- group-substituted-cycloaliphatic)]benzeneacetamides and -benzamide analgesics
JP3975535B2 (en) * 1997-12-03 2007-09-12 住友化学株式会社 Acetoacetic acid derivative, its production and use
EP1268568A4 (en) * 2000-02-15 2003-05-28 Foster Miller Inc No voc radiation curable resin compositions
JP2005342913A (en) * 2004-05-31 2005-12-15 Fuji Photo Film Co Ltd Original plate of lithographic printing plate, its manufacturing method and lithographic printing method
EP1780198B1 (en) * 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process

Also Published As

Publication number Publication date
KR20090009655A (en) 2009-01-23
US7935474B2 (en) 2011-05-03
US20090023093A1 (en) 2009-01-22
TWI359330B (en) 2012-03-01
EP2017274B1 (en) 2011-03-30
KR101357607B1 (en) 2014-02-05
EP2017274A1 (en) 2009-01-21
JP5478851B2 (en) 2014-04-23
JP2009024172A (en) 2009-02-05
ATE503750T1 (en) 2011-04-15
TW200914993A (en) 2009-04-01

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