DE602006020865D1 - Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folie - Google Patents
Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folieInfo
- Publication number
- DE602006020865D1 DE602006020865D1 DE602006020865T DE602006020865T DE602006020865D1 DE 602006020865 D1 DE602006020865 D1 DE 602006020865D1 DE 602006020865 T DE602006020865 T DE 602006020865T DE 602006020865 T DE602006020865 T DE 602006020865T DE 602006020865 D1 DE602006020865 D1 DE 602006020865D1
- Authority
- DE
- Germany
- Prior art keywords
- functional film
- pattern
- producing
- forming
- functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1486—Ornamental, decorative, pattern, or indicia
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Recrystallisation Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005166400 | 2005-06-07 | ||
PCT/JP2006/311666 WO2006132379A2 (en) | 2005-06-07 | 2006-06-05 | Structure for functional film pattern formation and method of manufacturing functional film |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006020865D1 true DE602006020865D1 (de) | 2011-05-05 |
Family
ID=36699297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006020865T Active DE602006020865D1 (de) | 2005-06-07 | 2006-06-05 | Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folie |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080135162A1 (de) |
EP (1) | EP1889306B1 (de) |
DE (1) | DE602006020865D1 (de) |
WO (1) | WO2006132379A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1889307B1 (de) * | 2005-06-07 | 2011-04-20 | FUJIFILM Corporation | Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films |
US20110109203A1 (en) * | 2009-11-06 | 2011-05-12 | The Trustees Of Princeton University | Flexible piezoelectric structures and method of making same |
JP5399970B2 (ja) * | 2010-03-31 | 2014-01-29 | パナソニック株式会社 | 強誘電体デバイスの製造方法 |
US8592291B2 (en) * | 2010-04-07 | 2013-11-26 | Massachusetts Institute Of Technology | Fabrication of large-area hexagonal boron nitride thin films |
TWI644800B (zh) * | 2018-01-15 | 2018-12-21 | 國立臺灣師範大學 | 含有二硫化鉬之生物感測晶片以及應用該生物感測晶片之檢測裝置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4886573A (en) * | 1986-08-27 | 1989-12-12 | Hitachi, Ltd. | Process for forming wiring on substrate |
US4988674A (en) * | 1989-02-09 | 1991-01-29 | Eastman Kodak Company | Electrically conductive articles and processes for their fabrication |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP2002134806A (ja) * | 2000-10-19 | 2002-05-10 | Canon Inc | 圧電膜型アクチュエータおよび液体噴射ヘッドとその製造方法 |
US6589857B2 (en) * | 2001-03-23 | 2003-07-08 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of semiconductor film |
FR2830983B1 (fr) * | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
CN1263173C (zh) * | 2001-12-06 | 2006-07-05 | 松下电器产业株式会社 | 复合压电体及其制造方法 |
US7439555B2 (en) * | 2003-12-05 | 2008-10-21 | International Rectifier Corporation | III-nitride semiconductor device with trench structure |
US7943491B2 (en) * | 2004-06-04 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp |
JP4949668B2 (ja) * | 2004-12-09 | 2012-06-13 | 富士フイルム株式会社 | セラミックス膜の製造方法及びセラミックス膜を含む構造物 |
EP1889307B1 (de) * | 2005-06-07 | 2011-04-20 | FUJIFILM Corporation | Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films |
WO2006132382A2 (en) * | 2005-06-07 | 2006-12-14 | Fujifilm Corporation | Method of manufacturing a film |
EP1889289B1 (de) * | 2005-06-07 | 2011-03-30 | FUJIFILM Corporation | Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films |
US20060288928A1 (en) * | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
-
2006
- 2006-06-05 WO PCT/JP2006/311666 patent/WO2006132379A2/en active Application Filing
- 2006-06-05 US US11/885,279 patent/US20080135162A1/en not_active Abandoned
- 2006-06-05 EP EP06747255A patent/EP1889306B1/de not_active Expired - Fee Related
- 2006-06-05 DE DE602006020865T patent/DE602006020865D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
US20080135162A1 (en) | 2008-06-12 |
EP1889306A2 (de) | 2008-02-20 |
WO2006132379A3 (en) | 2007-05-03 |
EP1889306B1 (de) | 2011-03-23 |
WO2006132379A2 (en) | 2006-12-14 |
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DE602006020865D1 (de) | Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folie |