DE602006011761D1 - Verstärkeranordnung und Verfahren zur Verstärkung - Google Patents

Verstärkeranordnung und Verfahren zur Verstärkung

Info

Publication number
DE602006011761D1
DE602006011761D1 DE602006011761T DE602006011761T DE602006011761D1 DE 602006011761 D1 DE602006011761 D1 DE 602006011761D1 DE 602006011761 T DE602006011761 T DE 602006011761T DE 602006011761 T DE602006011761 T DE 602006011761T DE 602006011761 D1 DE602006011761 D1 DE 602006011761D1
Authority
DE
Germany
Prior art keywords
transistor
node
coupled
amplification
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006011761T
Other languages
English (en)
Inventor
Pramod Singnurkar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams AG
Original Assignee
Austriamicrosystems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems AG filed Critical Austriamicrosystems AG
Publication of DE602006011761D1 publication Critical patent/DE602006011761D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45188Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45028Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are folded cascode coupled transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45292Indexing scheme relating to differential amplifiers the AAC comprising biasing means controlled by the signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45314Indexing scheme relating to differential amplifiers the AAC comprising clamping means, e.g. diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45398Indexing scheme relating to differential amplifiers the AAC comprising a voltage generating circuit as bias circuit for the AAC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE602006011761T 2006-11-07 2006-11-07 Verstärkeranordnung und Verfahren zur Verstärkung Active DE602006011761D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06023152A EP1921747B1 (de) 2006-11-07 2006-11-07 Verstärkeranordnung und Verfahren zur Verstärkung

Publications (1)

Publication Number Publication Date
DE602006011761D1 true DE602006011761D1 (de) 2010-03-04

Family

ID=37682565

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006011761T Active DE602006011761D1 (de) 2006-11-07 2006-11-07 Verstärkeranordnung und Verfahren zur Verstärkung

Country Status (3)

Country Link
EP (1) EP1921747B1 (de)
AT (1) ATE455391T1 (de)
DE (1) DE602006011761D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1884856B1 (de) 2006-07-26 2016-04-06 ams AG Spannungs-Strom-Umsetzerschaltungsanordnung und Verfahren zur Bereitstellung eines Rampenstroms.
ATE547840T1 (de) 2006-07-26 2012-03-15 Austriamicrosystems Ag Verstärkeranordnung und verstärkungsverfahren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107613A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 演算増幅回路
US6788146B2 (en) 2002-12-16 2004-09-07 Texas Instruments Incorporated Capacitor compensation in miller compensated circuits
US6747514B1 (en) * 2003-02-25 2004-06-08 National Semiconductor Corporation MOSFET amplifier with dynamically biased cascode output

Also Published As

Publication number Publication date
EP1921747A1 (de) 2008-05-14
ATE455391T1 (de) 2010-01-15
EP1921747B1 (de) 2010-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition