DE602005019711D1 - Methode und System für einen verbesserten lithographischen Prozess - Google Patents

Methode und System für einen verbesserten lithographischen Prozess

Info

Publication number
DE602005019711D1
DE602005019711D1 DE602005019711T DE602005019711T DE602005019711D1 DE 602005019711 D1 DE602005019711 D1 DE 602005019711D1 DE 602005019711 T DE602005019711 T DE 602005019711T DE 602005019711 T DE602005019711 T DE 602005019711T DE 602005019711 D1 DE602005019711 D1 DE 602005019711D1
Authority
DE
Germany
Prior art keywords
system parameters
optical
lens pupil
information
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019711T
Other languages
English (en)
Inventor
De Beeck Maria Op
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE602005019711D1 publication Critical patent/DE602005019711D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE602005019711T 2005-07-15 2005-07-15 Methode und System für einen verbesserten lithographischen Prozess Active DE602005019711D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05015414A EP1744214B1 (de) 2005-07-15 2005-07-15 Methode und System für einen verbesserten lithographischen Prozess

Publications (1)

Publication Number Publication Date
DE602005019711D1 true DE602005019711D1 (de) 2010-04-15

Family

ID=34937858

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019711T Active DE602005019711D1 (de) 2005-07-15 2005-07-15 Methode und System für einen verbesserten lithographischen Prozess

Country Status (5)

Country Link
US (1) US7800733B2 (de)
EP (1) EP1744214B1 (de)
JP (1) JP2007027740A (de)
AT (1) ATE459899T1 (de)
DE (1) DE602005019711D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8107054B2 (en) * 2007-09-18 2012-01-31 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
EP2372404B1 (de) * 2008-10-17 2013-01-16 Carl Zeiss SMT GmbH Projektionsobjektiv mit hoher Transmission und hoher Apertur sowie Projektionsbelichtungsvorrichtung
US20110246141A1 (en) * 2010-03-31 2011-10-06 Tokyo Electron Limited Method of optical metrology optimization using ray tracing
NL2008311A (en) * 2011-04-04 2012-10-08 Asml Netherlands Bv Integration of lithography apparatus and mask optimization process with multiple patterning process.
WO2019214909A1 (en) 2018-05-07 2019-11-14 Asml Netherlands B.V. Method for determining an electromagnetic field associated with a computational lithography mask model

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3281241B2 (ja) 1994-12-27 2002-05-13 株式会社東芝 レジストの吸収光量分布評価方法及びシステム
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6532076B1 (en) * 2000-04-04 2003-03-11 Therma-Wave, Inc. Method and apparatus for multidomain data analysis
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
WO2002031570A1 (fr) * 2000-10-10 2002-04-18 Nikon Corporation Procede d'evaluation de la qualite d'images
JP2004061515A (ja) 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP4077288B2 (ja) * 2002-09-30 2008-04-16 株式会社東芝 フォトマスクの設計方法およびプログラム
EP1429190B1 (de) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
US6839125B2 (en) 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations

Also Published As

Publication number Publication date
US20070013887A1 (en) 2007-01-18
JP2007027740A (ja) 2007-02-01
EP1744214A1 (de) 2007-01-17
ATE459899T1 (de) 2010-03-15
US7800733B2 (en) 2010-09-21
EP1744214B1 (de) 2010-03-03

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