DE602004030951D1 - Rückseitendünnung von bild-array-einrichtungen - Google Patents

Rückseitendünnung von bild-array-einrichtungen

Info

Publication number
DE602004030951D1
DE602004030951D1 DE602004030951T DE602004030951T DE602004030951D1 DE 602004030951 D1 DE602004030951 D1 DE 602004030951D1 DE 602004030951 T DE602004030951 T DE 602004030951T DE 602004030951 T DE602004030951 T DE 602004030951T DE 602004030951 D1 DE602004030951 D1 DE 602004030951D1
Authority
DE
Germany
Prior art keywords
facilities
back end
picture array
picture
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004030951T
Other languages
English (en)
Inventor
Kenneth A Costello
Kevin P Fairbairn
David W Brown
Yun Chung
Patricia Gober
Edward Yin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intevac Inc
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Publication of DE602004030951D1 publication Critical patent/DE602004030951D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26Image pick-up tubes having an input of visible light and electric output
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14629Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE602004030951T 2004-03-05 2004-10-25 Rückseitendünnung von bild-array-einrichtungen Active DE602004030951D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/795,040 US20040169248A1 (en) 2003-01-31 2004-03-05 Backside thinning of image array devices
PCT/US2004/035238 WO2005096393A1 (en) 2004-03-05 2004-10-25 Backside thinning of image array devices

Publications (1)

Publication Number Publication Date
DE602004030951D1 true DE602004030951D1 (de) 2011-02-17

Family

ID=35064083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030951T Active DE602004030951D1 (de) 2004-03-05 2004-10-25 Rückseitendünnung von bild-array-einrichtungen

Country Status (5)

Country Link
US (1) US20040169248A1 (de)
EP (1) EP1741143B1 (de)
JP (1) JP4976277B2 (de)
DE (1) DE602004030951D1 (de)
WO (1) WO2005096393A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE527101C2 (sv) * 2004-05-19 2005-12-20 Volvo Lastvagnar Ab Magnetbrytararrangemang och förfarande för att erhålla en differentialmagnetbrytare
US8482639B2 (en) * 2008-02-08 2013-07-09 Omnivision Technologies, Inc. Black reference pixel for backside illuminated image sensor
US8531565B2 (en) 2009-02-24 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
US9142586B2 (en) * 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
TWI440169B (zh) * 2009-08-31 2014-06-01 Sumco Corp 固態攝影元件用半導體晶圓的薄膜化控制方法
US8233066B2 (en) 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration
US8698925B2 (en) 2010-04-21 2014-04-15 Intevac, Inc. Collimator bonding structure and method
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
NL2011905C2 (en) * 2013-12-06 2015-06-09 Photonis Netherlands B V Electron-bombarded image sensor device.
US11621289B2 (en) 2020-05-22 2023-04-04 Eotech, Llc Compact proximity focused image sensor
CN112086474A (zh) * 2020-08-28 2020-12-15 清华大学深圳国际研究生院 荧光探测用图像传感器件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4348690A (en) 1981-04-30 1982-09-07 Rca Corporation Semiconductor imagers
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JP2578774B2 (ja) * 1986-09-02 1997-02-05 日本板硝子株式会社 レンズ付きモジュ−ルの製造方法
US5688715A (en) 1990-03-29 1997-11-18 The United States Of America As Represented By The Secretary Of The Navy Excimer laser dopant activation of backside illuminated CCD's
US5244817A (en) 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
JPH08160145A (ja) * 1994-12-06 1996-06-21 Toshiba Corp X線検出器
US5852322A (en) * 1995-05-19 1998-12-22 Dr. Johannes Heidenhain Gmbh Radiation-sensitive detector element and method for producing it
JPH11337646A (ja) * 1998-05-29 1999-12-10 Toshiba Corp 放射線半導体検出器、放射線半導体検出器アレイおよびコリメータ設置装置
US6307586B1 (en) 1999-07-20 2001-10-23 Intevac, Inc. Electron bombarded active pixel sensor camera incorporating gain control
US20020020846A1 (en) * 2000-04-20 2002-02-21 Bo Pi Backside illuminated photodiode array
JP2002319669A (ja) * 2001-04-23 2002-10-31 Hamamatsu Photonics Kk 裏面入射型ホトダイオード及びホトダイオードアレイ
US7023126B2 (en) * 2003-12-03 2006-04-04 Itt Manufacturing Enterprises Inc. Surface structures for halo reduction in electron bombarded devices

Also Published As

Publication number Publication date
EP1741143A4 (de) 2007-07-11
EP1741143B1 (de) 2011-01-05
EP1741143A1 (de) 2007-01-10
JP2007527122A (ja) 2007-09-20
JP4976277B2 (ja) 2012-07-18
US20040169248A1 (en) 2004-09-02
WO2005096393A1 (en) 2005-10-13

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