DE60118308D1 - Methode zur Korrektur optischer Naheffekte - Google Patents

Methode zur Korrektur optischer Naheffekte

Info

Publication number
DE60118308D1
DE60118308D1 DE60118308T DE60118308T DE60118308D1 DE 60118308 D1 DE60118308 D1 DE 60118308D1 DE 60118308 T DE60118308 T DE 60118308T DE 60118308 T DE60118308 T DE 60118308T DE 60118308 D1 DE60118308 D1 DE 60118308D1
Authority
DE
Germany
Prior art keywords
optical proximity
correcting optical
proximity effects
effects
correcting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60118308T
Other languages
English (en)
Other versions
DE60118308T2 (de
Inventor
Brian Martin
Christine Wallace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
Zarlink Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zarlink Semiconductor Ltd filed Critical Zarlink Semiconductor Ltd
Publication of DE60118308D1 publication Critical patent/DE60118308D1/de
Application granted granted Critical
Publication of DE60118308T2 publication Critical patent/DE60118308T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60118308T 2000-10-13 2001-09-12 Methode zur Korrektur optischer Naheffekte Expired - Fee Related DE60118308T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0025247 2000-10-13
GB0025247A GB2367907A (en) 2000-10-13 2000-10-13 Optical proximity correction

Publications (2)

Publication Number Publication Date
DE60118308D1 true DE60118308D1 (de) 2006-05-18
DE60118308T2 DE60118308T2 (de) 2006-12-07

Family

ID=9901316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60118308T Expired - Fee Related DE60118308T2 (de) 2000-10-13 2001-09-12 Methode zur Korrektur optischer Naheffekte

Country Status (4)

Country Link
US (1) US6686100B2 (de)
EP (1) EP1197802B1 (de)
DE (1) DE60118308T2 (de)
GB (1) GB2367907A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7318214B1 (en) 2003-06-19 2008-01-08 Invarium, Inc. System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
US7266800B2 (en) * 2004-06-04 2007-09-04 Invarium, Inc. Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
US7588868B2 (en) * 2004-10-06 2009-09-15 Cadence Design Systems, Inc. Method and system for reducing the impact of across-wafer variations on critical dimension measurements
EP2097788A1 (de) * 2006-12-21 2009-09-09 Nxp B.V. Verfahren und system zum identifizieren von schwachpunkten in einem integrierten schaltungsentwurf
KR100881518B1 (ko) 2007-10-11 2009-02-05 주식회사 동부하이텍 반도체 소자의 ｏｐｃ 모델링 방법 및 그 구조
CN103631083B (zh) * 2012-08-20 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种光学邻近修正的焦平面选择方法
CN113391516B (zh) * 2020-03-13 2022-03-04 长鑫存储技术有限公司 一种光学临近效应修正方法、装置、设备及介质

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657235A (en) * 1995-05-03 1997-08-12 International Business Machines Corporation Continuous scale optical proximity correction by mask maker dose modulation
US5862058A (en) * 1996-05-16 1999-01-19 International Business Machines Corporation Optical proximity correction method and system

Also Published As

Publication number Publication date
EP1197802A2 (de) 2002-04-17
GB2367907A (en) 2002-04-17
US6686100B2 (en) 2004-02-03
EP1197802A3 (de) 2004-03-17
US20020102474A1 (en) 2002-08-01
DE60118308T2 (de) 2006-12-07
EP1197802B1 (de) 2006-03-29
GB0025247D0 (en) 2000-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: X-FAB SEMICONDUCTOR FOUNDRIES AG, 99097 ERFURT, DE

8339 Ceased/non-payment of the annual fee